Datasheet blf404 DATASHEETS (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D175

BLF404

UHF power MOS transistor

Product specification
Supersedes data of 1997 Oct 28

1998 Jan 29

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

FEATURES

• High power gain

• Easy power control

• Gold metallization

• Good thermal stability

• Withstands full load mismatch

• Designed for broadband operation.

APPLICATIONS

• Communication transmitters in the VHF/UHF range with
a nominal supply voltage of 12.5 V.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS
power transistor in an 8-lead SOT409A SMD package with
a ceramic cap.

PINNING

PIN DESCRIPTION

1, 8 source
2, 3 gate
4, 5 source
6, 7 drain

handbook, halfpage

85

14

Top view

MBK150

Fig.1 Simplified outline SOT409A.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

≤ 60 °C in a common source test circuit.

mb

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

CW class-AB 500 12.5 4 ≥10 ≥50

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

1998 Jan 29 2

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

drain-source voltage − 40 V
gate-source voltage −±20 V
DC drain current − 1.5 A
total power dissipation Tmb≤ 85 °C − 8.3 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base Tmb≤ 85 °C, P

= 8.3 W 12.1 K/W

tot

10

handbook, halfpage

I

D

(A)

1

−1

10

11010

(1) Current in this area may be limited by R
(2) Tmb=85°C.

Fig.2 DC SOAR.

(2)(1)

V

(V)

DS

.

DSon

MGM522

2

1998 Jan 29 3

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

I

DSX

R

DSon

g

fs

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID= 5 mA 40 −−V
gate-source threshold voltage ID= 50 mA; VDS=10V 2 − 4.5 V
drain-source leakage current VGS= 0; VDS= 12.5 V −−0.5 mA
gate-source leakage current VDS= 0; VGS= ±20 V −−1µA
on-state drain current VGS= 15 V; VDS=10V − 2.3 − A
drain-source on-state resistance ID= 0.7 A; VGS=15V − 1.8 2.7 Ω
forward transconductance ID= 0.7 A; VDS= 10 V 200 270 − mS
input capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 14 − pF
output capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 17 − pF
feedback capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 3 − pF

25

handbook, halfpage

T.C.

(mV/K)

15

5

−5
10 10

VDS=10V.

2

3

10

ID(mA)

Fig.3 Temperature coefficient of gate-source

voltage as a function of drain current;
typical values.

MRA254

handbook, halfpage

4

10

3

I

D

(A)

2

1

0

0

VDS= 10V; Tj=25°C.

4 8 12 16 20

MRA249

VGS (V)

Fig.4 Drain current as a function of gate-source

voltage; typical values.

1998 Jan 29 4

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

handbook, halfpage

5

R

DSon

(Ω)

4

3

2

1

0

0 50 100

ID= 0.7 A; VGS=15V.

Tj (

Fig.5 Drain-source on-state resistance as a

function of junction temperature;
typical values.

MRA253

o

C)

150

V

DS

MRA246

(V)

50

handbook, halfpage

C

(pF)

40

30

20

10

0

0

VGS= 0; f = 1 MHz; Tj=25°C.

C

os

C

is

4 8 12 16

Fig.6 Input and output capacitance as functions

of drain-source voltage; typical values.

10

handbook, halfpage

C

rs

(pF)

8

6

4

2

0

0481216

VGS= 0; f = 1 MHz; Tj=25°C.

MRA256

VDS (V)

Fig.7 Feedback capacitance as a function of

drain-source voltage; typical values.

1998 Jan 29 5

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

APPLICATION INFORMATION

RF performance at T
through metallized holes.

≤ 60 °C in a common source test circuit with the device soldered on a printed-circuit board with

mb

MODE OF OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(A)

P

(W)

L

G

p

(dB)

η

(%)

D

CW, class-AB 500 12.5 50 4 ≥10 ≥50

typ. 11.5 typ. 55

Ruggedness in class-AB operation

The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: f = 500 MHz; V

20

handbook, halfpage

G

p

(dB)

16

12

8

4

= 12.5 V; PL= 4 W; Tmb≤ 60 °C.

DS

MGM520

100

η

D

(%)

80

η

D

60

G

p

40

20

handbook, halfpage

P

(W)

6

L

4

2

MGM521

0

0246

CW, class-AB operation; f = 500 MHz; VDS= 12.5 V;

= 50 mA; Tmb≤ 60 °C.

I

DQ

PL (W)

0

Fig.8 Power gain and drain efficiency as

functions of load power; typical values.

1998 Jan 29 6

0

0

CW, class-AB operation; f = 500 MHz; VDS= 12.5 V;

= 50 mA; Tmb≤ 60 °C.

I

DQ

200 400

PD (mW)

Fig.9 Load power as a function of drive power;

typical values.

600

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

Test circuit information

handbook, full pagewidth

input
50 Ω

L5

C4

C5

C6

+V

D

R3

R5

C8

R4

L2

DUT

L1

C1

C3

C10

L8

L9

L4

C11

C9

R1R6R2

L6 L7

L3

C7

C2

Fig.10 Class-AB common source test circuit at f = 500 MHz.

L10 L11

C13C12

output

50 Ω

MGM523

1998 Jan 29 7

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

List of components used in test circuit (see Figs 10 and 11).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1 electrolytic capacitor 4.7 µF, 10 V
C2, C3 multilayer ceramic chip capacitor 47 nF
C4 multilayer ceramic chip capacitor; note 1 18 pF
C5, C10 multilayer ceramic chip capacitor; note 1 180 pF
C6, C11 multilayer ceramic chip capacitor; note 1 270 pF
C7 multilayer ceramic chip capacitor; note 1 22 pF
C8 multilayer ceramic chip capacitor; note 1 8.2 pF
C9 multilayer ceramic chip capacitor; note 1 2.7 pF
C12 multilayer ceramic chip capacitor; note 1 1.2 pF
C13 multilayer ceramic chip capacitor; note 1 12 pF
L1 2 turns 1 mm enamelled copper wire

on a grade 4B1 Ferroxcube core

L2 3 turns 1 mm enamelled copper wire int. dia. = 4.6 mm

L3 bifilar coil lead dia. = 0.8 mm
L4 bifilar coil lead dia. = 1 mm
L5 stripline; note 2 50 Ω 8.8 × 2.38 mm
L6 stripline; note 2 50 Ω 5.8 × 2.38 mm
L7 stripline; note 2 50 Ω 6.8 × 2.38 mm
L8 stripline; note 2 50 Ω 3.76 × 2.38 mm
L9 stripline; note 2 50 Ω 5.8 × 2.38 mm
L10 stripline; note 2 50 Ω 4.48 × 2.38 mm
L11 stripline; note 2 50 Ω 3.13 × 2.38 mm
R1, R2 SMD resistor 3.9 kΩ
R3 metal film resistor 1 kΩ, 0.25 W
R4 metal film resistor 22 Ω, 0.25 W
R5 metal film resistor 10 kΩ, 0.25 W
R6 potentiometer 10 kΩ

ext. dia. = 4.2 mm
int. dia.=2mm
length = 6 mm

leads = 2x5mm

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad printed circuit board, with DUROID dielectric (ε
thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm.

1998 Jan 29 8

= 2.2);

r

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

handbook, full pagewidth

56

31

2

1

3

R6

R1
R2

R3

C2

R5

C5

L5

C6

C4

L3

L6 L8L7 L9 L10

C7

C8

BLF404

+V

D

C1

L1

R4

C3

L2

C9

C10

C11

C12

L11

C13

L4

MGM524

Dimensions in mm.

The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.

Fig.11 Printed-circuit board and component layout for 500 MHz class-AB test circuit in Fig.10.

1998 Jan 29 9

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

x

i

r

i

f (MHz)

MGM517

handbook, halfpage

8

r

i

(Ω)

6

4

2

0

0 200 400 600

CW, class-AB operation; VDS= 12.5 V; ID= 50 mA;

= 4 W; Tmb≤ 60 °C.

P

L

Fig.12 Input impedance as a function of frequency

(series components); typical values.

0

x

(Ω)

−20

−40

−60

−80

f (MHz)

MGM518

R

L

X

L

16

handbook, halfpage

i

Z

L

(Ω)

12

8

4

0

0 200 400 600

CW, class-AB operation; VDS= 12.5 V; ID= 50 mA;

= 4 W; Tmb≤ 60 °C.

P

L

Fig.13 Load impedance as a function of frequency

(series components); typical values.

30

handbook, halfpage

G

p

(dB)

20

10

0

0 200 400 600

CW, class-AB operation; VDS= 12.5 V; IDQ=50mA;

= 4 W; Tmb≤ 60 °C.

P

L

f (MHz)

Fig.14 Power gain as a function of frequency

(series components); typical values.

MGM519

1998 Jan 29 10

Philips Semiconductors Product specification

f

UHF power MOS transistor BLF404

MOUNTING RECOMMENDATIONS

Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted
on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12
(0.5 mm diameter) through metallized holes filled with solder.
A thermal resistance R
on the printed-circuit board.

of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted

th(mb-h)

ull pagewidth

3.607.38

1.87 (2×)

4.60

0.60 (4×)

0.80 (2×)

0.50 (12×)

1.00 (8×)

1.00 (9×)

MGK390

Dimensions in mm.

Fig.15 Reflow soldering footprint for SOT409A.

1998 Jan 29 11

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

PACKAGE OUTLINE

Ceramic surface mounted package; 8 leads SOT409A

D

A

D

2

H

1

85

H

14

e

b

0 2.5 5 mm

B

w

B

2

w

1

scale

c

L

E

2

A

α

Q

1

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT cbDE

mm

inches

A

2.36

2.06

0.093

0.081

OUTLINE
VERSION

SOT409A

0.58

0.43

0.023

0.017

D

2

0.23

5.94

5.03

0.234

0.198

5.16

5.00

0.203

0.197

0.194

0.158

0.18

0.009

0.007

IEC JEDEC EIAJ

E

4.93

4.14

4.01

3.99

0.163

0.157

REFERENCES

2

1.27

0.050

e

HH

7.47

7.26

0.294

0.286

1998 Jan 29 12

1

4.39

4.24

0.173

0.167

LQ

1.02

0.10

0.51

0.00

0.040

0.004

0.020

0.000

1

0.010

w

w

1

2

0.25

0.25

0.010

EUROPEAN

PROJECTION

α

7°
0°

7°
0°

ISSUE DATE

98-01-27

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Jan 29 13

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

NOTES

1998 Jan 29 14

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

NOTES

1998 Jan 29 15

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© Philips Electronics N.V. 1998 SCA57
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Printed in The Netherlands 125108/00/03/pp16 Date of release: 1998 Jan 29 Document order number: 9397 750 03239