Datasheet BGD904L Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD904L
CATV amplifier module
Product specification Supersedes data of 1999 Mar 26
1999 Aug 17
Page 2
Philips Semiconductors Product specification
CATV amplifier module BGD904L
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
Low DC current consumption.
APPLICATIONS
CATV systems operating in the 40 to 900 MHz frequency range.
DESCRIPTION
Hybrid amplifier module ina SOT115J package operating with a supply voltage of 24 V.
PINNING - SOT115J
PIN DESCRIPTION
1 input 2 common 3 common 5+V 7 common 8 common 9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
351
789
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 19.7 20.3 dB
f = 900 MHz 20.5 21.5 dB
I
tot
total current consumption (DC) VB= 24 V 350 380 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage 30 V RF input voltage 70 dBmV storage temperature 40 +100 °C operating mounting base temperature 20 +100 °C
1999 Aug 17 2
Page 3
Philips Semiconductors Product specification
CATV amplifier module BGD904L
CHARACTERISTICS
Bandwidth 40 to 900 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 40 to 900 MHz 0.4 0.9 1.4 dB FL flatness straight line f = 40 to 900 MHz −±0.15 ±0.3 dB S
11
S
22
S
21
CTB composite triple beat 49 channels flat; V
X
mod
power gain f = 50 MHz 19.7 20 20.3 dB
f = 900 MHz 20.5 21 21.5 dB
input return losses f = 40 to 80 MHz 21 25 dB
f = 80 to 160 MHz 22 30 dB f = 160 to 320 MHz 21 29 dB f = 320 to 550 MHz 18 24 dB f = 550 to 650 MHz 17 22 dB f = 650 to 900 MHz 16 21 dB
output return losses f = 40 to 80 MHz 25 29 dB
f = 80 to 160 MHz 23 28 dB f = 160 to 320 MHz 19 25 dB f = 320 to 750 MHz 18 24 dB f = 750 to 900 MHz 17 23 dB
phase response f = 50 MHz 45 +45 deg
= 47 dBmV;
o
−−65.5 64 dB
fm= 859.25 MHz 77 channels flat; V
= 44 dBmV;
o
−−67.5 65.5 dB
fm= 547.25 MHz 110 channels flat; V
= 44 dBmV;
o
−−61 59.5 dB
fm= 745.25 MHz 129 channels flat; V
= 44 dBmV;
o
−−57 55 dB
fm= 859.25 MHz 110 channels; f
= 397.25 MHz;
m
−−61.5 59.5 dB
Vo= 49 dBmV at 550 MHz; note 1 129 channels; f
= 649.25 MHz;
m
−−56 54 dB
Vo= 49.5 dBmV at 860 MHz; note 2
cross modulation 49 channels flat; Vo= 47 dBmV;
−−64 61 dB
fm= 55.25 MHz 77 channels flat; V
= 44 dBmV;
o
−−66.5 64 dB
fm= 55.25 MHz 110 channels flat; V
= 44 dBmV;
o
−−63 60.5 dB
fm= 55.25 MHz 129 channels flat; V
= 44 dBmV;
o
−−61.5 59 dB
fm= 55.25 MHz 110 channels; f
= 397.25 MHz;
m
−−60 57.5 dB
Vo= 49 dBmV at 550 MHz; note 1 129 channels; f
= 859.25 MHz;
m
−−56 53.5 dB
Vo= 49.5 dBmV at 860 MHz; note 2
1999 Aug 17 3
Page 4
Philips Semiconductors Product specification
CATV amplifier module BGD904L
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
CSO composite second order
distortion
d
2
V
o
second order distortion note 3 −−82 75 dB
output voltage dim= 60 dB; note 6 62.5 64 dBmV
NF noise figure f = 50 MHz 3.8 5 dB
I
tot
total current consumption (DC) note 9 350 365 380 mA
Notes
1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp= 55.25 MHz; Vp= 44 dBmV; fq= 805.25 MHz; Vq= 44 dBmV; measured at fp+fq= 860.5 MHz.
4. fp= 55.25 MHz; Vp= 44 dBmV; fq= 691.25 MHz; Vq= 44 dBmV; measured at fp+fq= 746.5 MHz.
5. fp= 55.25 MHz; Vp= 44 dBmV; fq= 493.25 MHz; Vq= 44 dBmV; measured at fp+fq= 548.5 MHz.
6. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo; fq= 858.25 MHz; Vq=Vo−6 dB; fr= 860.25 MHz; Vr=Vo−6 dB; measured at fp+fq−fr= 849.25 MHz.
7. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo; fq= 747.25 MHz; Vq=Vo−6 dB; fr= 749.25 MHz; Vr=Vo−6 dB; measured at fp+fq−fr= 738.25 MHz.
8. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=Vo; fq= 547.25 MHz; Vq=Vo−6 dB; fr= 549.25 MHz; Vr=Vo−6 dB; measured at fp+fq−fr= 538.25 MHz.
9. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 35 V.
49 channels flat; Vo= 47 dBmV;
−−69 63 dB
fm= 860.5 MHz 77 channels flat; V
= 44 dBmV;
o
−−73 68 dB
fm= 548.5 MHz 110 channels flat; V
= 44 dBmV;
o
−−69 63 dB
fm= 746.5 MHz 129 channels flat; V
= 44 dBmV;
o
−−65 59 dB
fm= 860.5 MHz 110 channels; f
= 150 MHz;
m
−−68 63 dB
Vo= 49 dBmV at 550 MHz; note 1 129 channels; f
= 150 MHz;
m
−−63 58 dB
Vo= 49.5 dBmV at 860 MHz; note 2
note 4 −−83 76 dB note 5 −−83 77 dB
d
= 60 dB; note 7 63.5 65.5 dBmV
im
d
= 60 dB; note 8 65.5 67.5 dBmV
im
CTB compression = 1 dB;
47.5 48.5 dBmV
129 channels flat; f = 859.25 MHz CSO compression=1dB;
50 52 dBmV
129 channels flat; f = 860.5 MHz
f = 550 MHz 4.1 5.5 dB f = 750 MHz 4.8 6.5 dB f = 900 MHz 5.9 7.5 dB
1999 Aug 17 4
Page 5
Philips Semiconductors Product specification
CATV amplifier module BGD904L
50
handbook, halfpage
MGS452
CTB (dB)
60
(1)
(2) (3) (4)
70
(1)
80
90
0
200
400 600 800
f (MHz)
ZS=ZL=75Ω; VB= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
(1) Vo. (2) Typ. +3 σ.
(3) Typ. (4) Typ. 3 σ.
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
(2) (3) (4)
52
V
o
(dBmV) 48
44
40
36
50
handbook, halfpage
X
mod
(dB)
60
70
(1)
(1)
MGS453
(2) (3) (4)
80
90
0
200
400 600 800
f (MHz)
ZS=ZL=75Ω; VB= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
(1) Vo. (2) Typ. +3 σ.
(3) Typ. (4) Typ. 3 σ.
Fig.3 Crossmodulationasafunctionoffrequency
under tilted conditions.
52
V
o
(dBmV) 48
44
40
36
50
handbook, halfpage
MGS454
CSO
(dB)
60
(1)
(2)
70
(3)
80
90
0
200
(4)
400 600 800
f (MHz)
ZS=ZL=75Ω; VB= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
(1) Vo. (2) Typ. +3 σ.
(3) Typ. (4) Typ. 3 σ.
Fig.4 Composite second order distortion as a
function of frequency under tilted conditions.
(2) (1)
(3)
(4)
52
V
o
(dBmV) 48
44
40
36
1999 Aug 17 5
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Philips Semiconductors Product specification
CATV amplifier module BGD904L
50
handbook, halfpage
CTB (dB)
60
70
80
90
ZS=ZL=75Ω; VB= 24 V; 129 chs; tilt = 12.5 dB; (50 to 860 MHz). (1) Vo. (2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ. (4) Typ. 3 σ.
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
MGS455
(2) (1)
(3) (4)
f (MHz)
52
V
o
(dBmV) 48
44
40
36
50
handbook, halfpage
X
mod
(dB)
60
70
80
90
ZS=ZL=75Ω; VB= 24 V; 129 chs; tilt = 12.5 dB; (50 to 860 MHz). (1) Vo. (2) Typ. +3 σ.
200 1000
0
(3) Typ. (4) Typ. 3 σ.
400 600 800
MGS456
(2) (3)
(1) (4)
f (MHz)
Fig.6 Crossmodulationasafunctionoffrequency
under tilted conditions.
52
V
o
(dBmV) 48
44
40
36
50
handbook, halfpage
CSO
(dB)
60
70
80
90
ZS=ZL=75Ω; VB= 24 V; 129 chs; tilt = 12.5 dB; (50 to 860 MHz). (1) Vo. (2) Typ. +3 σ.
200 1000
0
(3) Typ. (4) Typ. 3 σ.
400 600 800
MGS457
(1)
(2)
(3)
(4)
f (MHz)
Fig.7 Composite second order distortion as a
function of frequency under tilted conditions.
52
V
o
(dBmV) 48
44
40
36
1999 Aug 17 6
Page 7
Philips Semiconductors Product specification
CATV amplifier module BGD904L
20
handbook, halfpage
CTB (dB)
30
40
50
(1)
60
70
ZS=ZL=75Ω; VB= 24 V; 129 chs; fm= 859.25 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. 3 σ.
(2) (3)
40
45 50 55
MGS458
Vo (dBmV)
Fig.8 Compositetriplebeatasafunctionofoutput
voltage.
30
handbook, halfpage
CSO
(dB)
40
50
60
70
80
40
ZS=ZL=75Ω; VB= 24 V; 129 chs; fm= 860.5 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. 3 σ.
(1)
(2)
(3)
45 50 55
Vo (dBmV)
Fig.9 Composite second order distortion as a
function of output voltage.
MGS459
1999 Aug 17 7
Page 8
Philips Semiconductors Product specification
CATV amplifier module BGD904L
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
E
A
2
A
L
F
S
Z p
1
5
78923
c
d
U
Q
B
U
1
2
y M
p
q
B
0 5 10 mm
W
scale
e
e
1
b
q
2
q
1
y M
B
w
y M
M
B
DIMENSIONS (mm are the original dimensions)
A
UNIT
max.
max.
mm 20.8 9.1
OUTLINE VERSION
SOT115J
A
2
c
bF
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
0.38
IEC JEDEC EIAJ
D
max.
d
max.
E
max.
ee
1
REFERENCES
L
min.
1999 Aug 17 8
Q
p
4.15
3.85
q
q1q
max.
2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
2
U
1
S
max.
EUROPEAN
PROJECTION
W
U
2
6-32 UNC
yw
ISSUE DATE
99-02-06
Z
max.
Page 9
Philips Semiconductors Product specification
CATV amplifier module BGD904L
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Aug 17 9
Page 10
Philips Semiconductors Product specification
CATV amplifier module BGD904L
NOTES
1999 Aug 17 10
Page 11
Philips Semiconductors Product specification
CATV amplifier module BGD904L
NOTES
1999 Aug 17 11
Page 12
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1999
Internet: http://www.semiconductors.philips.com
67
Printed in The Netherlands 125008/02/pp12 Date of release: 1999 Aug 17 Document order number: 9397 750 06076
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