Page 1
BFP182T/BFP182TW/BFP182TRW
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
D
Low power applications
D
Low noise figure
D
High transition frequency
1
2
1
Vishay Telefunken
2
13 653
4
3
BFP182TW Marking: W82
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 566
21
94 9279
13 579
43
BFP182T Marking: 82P
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 56613 654
34
BFP182TRW Marking: WSG
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85013
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
Page 2
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thJA
15 V
10 V
2 V
35 mA
200 mW
150
–65 to +150
450 K/W
°
C
°
C
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Document Number 85013
Rev. 3, 20-Jan-99
Page 3
BFP182T/BFP182TW/BFP182TRW
qy
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 15 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 15 mA, IB =1.5 mA V
DC forward current transfer ratio VCE = 6 V, IC = 5 mA h
VCE = 8 V, IC = 20 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 6 V, IC = 5 mA, f = 500 MHz f
VCE = 8 V, IC = 20 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 8 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 6 V, IC = 5 mA, ZS = Z
Sopt
,
f = 900 MHz
VCE = 6 V, IC = 5 mA, ZS = Z
Sopt
,
f = 1.75 GHz
Power gain VCE = 8 V, IC = 20 mA, ZS = 50 W,
ZL = Z
, f = 900 MHz
Lopt
VCE = 8 V, IC = 20 mA, ZS = 50 W,
Z
= Z
L
, f = 1.75 GHz
Lopt
Transducer gain VCE = 8 V, IC = 20 mA, Z0 = 50 W,
f = 900 MHz
T
T
cb
ce
eb
F 1.5 dB
F 2.0 dB
G
pe
G
pe
S
21e
Vishay Telefunken
CES
CBO
EBO
(BR)CEO
CEsat
FE
FE
2
10 V
50 90 150
5.5 GHz
7.5 GHz
0.3 pF
0.2 pF
0.7 pF
18 dB
12 dB
15 dB
100mA
100 nA
0.1 0.4 V
100
1
m
A
Document Number 85013
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (6)
Page 4
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Dimensions of BFP182TW in mm
Dimensions of BFP182TRW in mm
96 12237
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4 (6)
96 12238
Document Number 85013
Rev. 3, 20-Jan-99
Page 5
BFP182T/BFP182TW/BFP182TRW
Dimensions of BFP182T in mm
Vishay Telefunken
96 12240
Document Number 85013
Rev. 3, 20-Jan-99
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5 (6)
Page 6
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
6 (6)
Document Number 85013
Rev. 3, 20-Jan-99
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