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BD243C
3
BD244C
Complementary power transistors
Features
■ Complementary NPN-PNP devices
Applications
■ Power linear and switching
Description
The device is manufactured in Planar technology
with “Base Island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage. The
PNP type is BD244C.
.
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
BD243C
BD244C
July 2007 Rev 5 1/10
BD243C
BD244C
TO-220 Tube
www.st.com
10
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Absolute maximum ratings BD243C BD244C
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter
V
V
V
I
P
T
Note: For PNP types voltage and current values are negative
Collector-base voltage (IE = 0) 100 V
CBO
Collector-emitter voltage (IB = 0) 100 V
CEO
Emitte-base voltage (IC = 0) 5 V
EBO
I
Collector current 6 A
C
Collector peak current (tP < 5ms) 10 A
CM
I
Base current 2 A
B
Total dissipation at Tc = 25°C 65 W
TOT
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
Value
BD243C (NPN) BD244C (PNP)
Unit
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BD243C BD244C Electrical characteristics
2 Electrical characteristics
(T
= 25°C; unless otherwise specified)
case
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE
h
FE
1. Pulsed duration = 300 ms, duty cycle ≤ 2%.
Note: For PNP types voltage and current values are negative.
Collector cut-off current
(V
= 0)
BE
Collector cut-off current
= 0)
(I
B
Emitter cut-off current
= 0)
(I
C
Collector-emitter
(1)
sustaining voltage (I
Collector-emitter
(1)
saturation voltage
(1)
Base-emitter voltage
(1)
DC current gain
B
= 0)
V
CE
V
CE
V
EB
= 30mA
I
C
I
= 6A __ IB = 1A
C
= 6A _____ IB = 1A
I
C
= 0.3mA__ V
I
C
I
= 3A _____ V
C
= 100V
= 60V
= 5V
= 4V
CE
= 4V3015
CE
0.4 mA
0.7 mA
1mA
100 V
1.5 V
2V
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Electrical characteristics BD243C BD244C
2.1 Typical characteristics
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP)
Figure 6. Collector-emitter saturation
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voltage (NPN)
Figure 7. Collector-emitter saturation
voltage (PNP)
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BD243C BD244C Electrical characteristics
Figure 8. Base-emitter saturation
voltage (NPN)
Figure 10. Base-emitter saturation
voltage (NPN)
Figure 9. Base-emitter saturation
voltage (PNP)
Figure 11. Base-emitter saturation
voltage (PNP)
Figure 12. BT(ON) time (NPN) Figure 13. BT
time (PNP)
(ON)
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Electrical characteristics BD243C BD244C
Figure 14. Resistive load switching time
(NPN)
Figure 16. Resistive load switching time
(NPN)
Figure 15. Resistive load switching time
(PNP)
Figure 17. Resistive load switching time
(PNP)
Figure 18. Collector-base and collector-
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emitter capacitance (NPN)
Figure 19. Collector-base and collector-
emitter capacitance (PNP)
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BD243C BD244C Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in
ECOPACK® packages. These packages have a Lead-free second level
interconnect . The category of second level interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner
box label. ECOPACK is an ST trademark. ECOPACK specifications are available
at: www.st.com
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Package mechanical data BD243C BD244C
TO-220 Mechanical data
DIM.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
MIN. TYP MAX.
mm.
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BD243C BD244C Revision history
4 Revision history
Table 4. Revision history
Date Revision Changes
13-Sep-2005 4 New datasheet according to MLD-PWR/05/1267
25-Jul-2007 5
Figures 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18 and
figure 19, added
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BD243C BD244C
y
y
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