Datasheet BCW66F, BCW65C, BCW65B, BCW65A, BCW66H Datasheet (Siemens)

NPN Silicon AF Transistors BCW 65

BCW 66

● For general AF applications

● High current gain

● Low collector-emitter saturation voltage

● Complementary types: BCW 67, BCW 68 (PNP)

Type Ordering Code

Marking

(tape and reel)

BCW 65 A
BCW 65 B
BCW 65 C
BCW 66 F
BCW 66 G
BCW 66 H

EAs
EBs
ECs
EFs
EGs
EHs

Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632

Pin Configuration

1 2 3

B E C

Package

SOT-23

1)

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

5.91

BCW 65
BCW 66

Maximum Ratings
Parameter Symbol Values Unit

BCW 65 BCW 66

Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current I
Peak collector current ICM A

CE0 V

32 45
60 75

EB0

C mA

55

800

1
Base current IB mA100
Peak base current I
Total power dissipation, T

S = 79 ˚C Ptot mW

Junction temperature Tj ˚C
Storage temperature range T

BM 200

330
150

stg

– 65 … + 150

Thermal Resistance

Junction - ambient

1)

Rth JA ≤ 285 K/W

Junction - soldering point Rth JS ≤ 215

1)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 2

Electrical Characteristics

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BCW 65
BCW 66

UnitValuesParameter Symbol

min. typ. max.

VCollector-emitter breakdown voltage

C = 10 mA

BCW 65
BCW 66

Collector-base breakdown voltage

C = 10 µA

BCW 65
BCW 66

(BR)CE0

V

(BR)CB0

V

32
45

60
75

–
–

–
–

–
–

–

–
Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 5––
Collector cutoff current

VCB = 32 V BCW 65

CB = 45 V BCW 66

V

CB = 32 V, TA = 150 ˚C BCW 65

V

CB = 45 V, TA = 150 ˚C BCW 66

V

I

CB0

–
–
–
–

–
–
–
–

20

20

20

20

nA
nA

µA
µA

EB = 4 V IEB0 ––20

DC current gain

C = 100 µA, VCE = 10 V

1)

BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H

C = 10 mA, VCE = 1 V

BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H

C = 100 mA, VCE = 1 V

BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H

C = 500 mA, VCE = 2 V

BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H

FE

h

35
50
80

75
110
180

100
160
250

35
60
100

–
–
–

–
–
–

160
250
350

–
–
–

–

–

–

–

–

–

250

400

630

–

–

–

nAEmitter-base cutoff current, V
–

1)

Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group 3

Electrical Characteristics

I
I

I
I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BCW 65
BCW 66

UnitValuesParameter Symbol

min. typ. max.

Collector-emitter saturation voltage

C = 100 mA, IB = 10 mA
C = 500 mA, IB = 50 mA

Base-emitter saturation voltage

C = 100 mA, IB = 10 mA
C = 500 mA, IB = 50 mA

1)

AC characteristics

C = 50 mA, VCE = 5 V, f = 20 MHz

CB = 10 V, f = 1 MHz

V

Input capacitance

EB = 0.5 V, f = 1 MHz

V

1)

V

CEsat

–
–

V

BEsat

–
–

f

T – 170 –

C

obo –6–

C

ibo –60–

–
–

–
–

0.3

0.7

1.25
2

V

MHzTransition frequency

pFOutput capacitance

1)

Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group 4

BCW 65
BCW 66

Total power dissipation Ptot = f (TA*; TS)

* Package mounted on epoxy

Transition frequency fT = f (IC)

CE = 5 V

V

Permissible pulse load P

tot max/Ptot DC = f (tp)

Collector cutoff current I

CB = VCEmax

V

CB0 = f (TA)

Semiconductor Group 5

BCW 65
BCW 66

Base-emitter saturation voltage

C = f (VBEsat)

I

FE = 10

h

Collector-emitter saturation voltage

C = f (VCEsat)

I

FE = 10

h

DC current gain h

CE = 1 V

V

FE = f (IC)

Semiconductor Group 6