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BCW65C
C
E
SOT-23
Mark: ED
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 500 mA. Sourced from Process 19.
B
BCW65C
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 32 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.0 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BCW65C
P
D
R
θ
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Total Device Dissipa tion
Derate above 25°C
Thermal Resistan ce, Junction to Ambient 357
350
2.8
mW
mW/°C
C/W
°
ã 1997 Fairchild Semiconductor Corporation
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(BR)
(BR)
(BR)
µ
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CES
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitte r Breakdown Voltage IC = 10 mA, IB = 032V
Collector-Base Breakdown Voltag e
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Collector-Cutoff Current VCB = 32 V, IE = 0
V
= 32 V, IE = 0, TA = 150°C
CB
60 V
5.0 V
20
20
nA
A
Emitter-Cutoff Current VEB = 4.0 V, IC = 0 20 nA
DC Current Gain
Collector-Emitte r Saturation Voltage IC = 100 mA, IB = 10 mA
)
Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 2.0 V
)
I
= 100 µA, VCE = 10 V
C
I
= 10 mA, VCE = 1.0 V
C
I
= 100 mA, VCE = 1.0 V
C
I
= 500 mA, VCE = 2.0 V
C
I
= 500 mA, B = 50 mA
C
80
180
250
50
630
0.3
0.7
V
BCW65C
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF Noise Figure IC = 0.2 mA, VCE = 5.0,
Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,
f = 100 MHz
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 12 pF
Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 80 pF
R
= 1.0 kΩ, f = 1.0 kHz,
S
BW = 200 Hz
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
200
25 °C
FE
h - TYPICAL PULSED CURRENT GAIN
100
- 40 °C
0
0.1 0.3 1 3 10 30 100 300
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
0.3
0.2
0.1
110100500
- COLLECTOR-EMITTER VOLTAGE (V)
CESAT
100 MHz
10 dB
= 10
β
125 °C
25 °C
I - COLLECTOR CURRENT (mA)
C
- 40 °C
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Typical Characteristics
BCW65C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
0.8
0.6
- 40 °C
25 °C
125 °C
0.4
BESAT
V - BASE-EMITTER VOLTAGE (V)
1 10 100 500
I - COLLECTOR CURRENT (mA)
C
Collector-Cut of f Cur r ent
vs Ambient Temperature
500
V = 40V
100
CB
10
1
0.1
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
°
Base-Emitter ON Voltage vs
Collector Current
1
V = 5V
CE
0.8
0.6
0.4
0.2
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125 °C
0.1 1 10 25
I - COLLECTOR CURRENT (mA)
C
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
16
12
8
CAPACITANCE (pF)
C
4
0.1 1 10 100
ob
REVERSE BIAS VOLTAGE (V)
C
f = 1 MHz
te
Power Dissipation vs
Ambient T emperature
350
300
250
200
150
100
50
D
P - POWER DISSIPATION (mW)
0
0 25 50 75 100 125 150
TEMPERATURE ( C)
SOT-23
o
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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