Datasheet BCX70K, BCX70J, BCX70H, BCX70G, BCW60FF Datasheet (Siemens)

NPN Silicon AF Transistors BCW 60

BCX 70

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

● Low noise between 30 Hz and 15 kHz

● Complementary types: BCW 61, BCX 71 (PNP)

Type Ordering Code

Marking

(tape and reel)

BCW 60 A
BCW 60 B
BCW 60 C
BCW 60 D
BCW 60 FF
BCW 60 FN
BCX 70 G
BCX 70 H
BCX 70 J
BCX 70 K

AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs

Q62702-C1517
Q62702-C1497
Q62702-C1476
Q62702-C1477
Q62702-C1529
Q62702-C1567
Q62702-C1539
Q62702-C1481
Q62702-C1552
Q62702-C1571

Pin Configuration

1 2 3

B E C

Package

SOT-23

1)

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

5.91

BCW 60

BCX 70

Maximum Ratings
Parameter Symbol Values Unit

BCW 60 BCX 70

BCW 60

FF

Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Peak collector current ICM

CE0 V

32 45

32
3232 45

EB0

5
100
200

Peak base current IBM 200
Total power dissipation, T
Junction temperature Tj ˚C

Storage temperature range T

S = 71 ˚C Ptot mW

330
150

stg

– 65 … + 150

Thermal Resistance

Junction - ambient

1)

Junction - soldering point R

Rth JA K/W

th JS

≤ 310
≤ 240

1)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 2

Electrical Characteristics

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BCW 60

BCX 70

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 10 mA BCW 60, BCW 60 FF

BCX 70

Collector-base breakdown voltage

C = 10 µA BCW 60, BCW 60 FF

(BR)CB0

V

BCX 70

Emitter-base breakdown voltage

E = 1 µA

Collector cutoff current

VCB = 32 V BCW 60, BCW 60 FF

CB = 45 V BCX 70

V

CB = 32 V, TA = 150 ˚C BCW 60, BCW 60 FF

V

CB = 45 V, TA = 150 ˚C BCX 70

V

V

(BR)EB0 5––

I

CB0

32
45

32
45

–
–
–
–

–
–

–
–

–
–
–
–

–
–

–
–

20
20
20
20

VCollector-emitter breakdown voltage

nA
nA

µA
µA

I

EB0 ––20

EB = 4 V

V

DC current gain

C = 10 µA, VCE = 5 V

1)

BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K

C = 2 mA, VCE = 5 V

BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K

C = 50 mA, VCE = 1 V

BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K

FE

h

20
20
40
100

120
180
250
380

50
70
90
100

140
200
300
460

170
250
350
500

–
–
–
–

–
–
–
–

220
310
460
630

–
–
–
–

nAEmitter cutoff current

–

1)

Pulse test: t ≤ 300 µs, D ≤ 2%.

Semiconductor Group 3

Electrical Characteristics

I
I

I
I

I
I
I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BCW 60

BCX 70

UnitValuesParameter Symbol

min. typ. max.

Collector-emitter saturation voltage

C = 10 mA, IB = 0.25 mA
C = 50 mA, IB = 1.25 mA

Base-emitter saturation voltage

C = 10 mA, IB = 0.25 mA
C = 50 mA, IB = 1.25 mA

1)

Base-emitter voltage

C = 10 µA, VCE = 5 V
C = 2 mA, VCE = 5 V
C = 50 mA, VCE = 1 V

1)

1)

V

CEsat

V

BEsat

VBE (on)

–
–

–
–

–

0.55
–

0.12

0.20

0.70

0.83

0.52

0.65

0.78

V

0.25

0.55

0.85

1.05

–

0.75
–

AC characteristics

C = 20 mA, VCE = 5 V, f = 100 MHz

CB = 10 V, f = 1 MHz

V

f

T – 250 –

C

obo –3–

MHzTransition frequency

pFOutput capacitance

Input capacitance

EB = 0.5 V, f = 1 MHz

V

C = 2 mA, VCE = 5 V, f = 1 kHz

BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K

C

ibo –8–

11e

h

–
–
–
–

2.7

3.6

4.5

7.5

–
–
–
–

kΩShort-circuit input impedance

Open-circuit reverse voltage transfer ratio

C = 2 mA, VCE = 5 V, f = 1 kHz

BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J

1)

Pulse test: t ≤ 300 µs, D ≤ 2%.

BCW 60 FN, BCW 60 D, BCX 70 K

12e

h

–
–
–

1.5

2.0

2.0

–
–
–

3.0

10

–4

Semiconductor Group 4

Electrical Characteristics

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

AC characteristics

BCW 60

BCX 70

UnitValuesParameter Symbol

min. typ. max.

–Short-circuit forward current transfer ratio

µsOpen-circuit output admittance

dBNoise figure

µVEquivalent noise voltage

C = 2 mA, VCE = 5 V, f = 1 kHz

BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K

C = 2 mA, VCE = 5 V, f = 1 kHz

BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K

C = 0.2 mA, VCE = 5 V, RS = 2 kΩ

f = 1 kHz,

∆f = 200 Hz

BCW 60 A to BCX 70 K
BCW 60 FF, BCW 60 FN

C = 0.2 mA, VCE = 5 V, RS = 2 kΩ

21e

h

–
–
–
–

22e

h

–
–
–
–

200
260
330
520

18
24
30
50

–
–
–
–

–
–
–
–

F

–
–

n – – 0.135

V

2
1

–
2

f = 10 Hz … 50 Hz

BCW 60 FF, BCW 60 FN

Semiconductor Group 5

BCW 60

BCX 70

Total power dissipation Ptot = f (TA*; TS)

* Package mounted on epoxy

Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance C

EB0 = f (VEB0)

Permissible pulse load P

tot max/Ptot DC = f (tp)

Transition frequency f

CE = 5 V

V

T = f (IC)

Semiconductor Group 6

BCW 60

BCX 70

Base-emitter saturation voltage

C = f (VBEsat)

I

FE = 40

h

Collector-emitter saturation voltage

C = f (VCEsat)

I

FE = 40

h

Collector current I

CE = 5 V

V

C = f (VBE)

DC current gain h

CE = 5 V

V

FE = f (IC)

Semiconductor Group 7

BCW 60

BCX 70

Collector cutoff current ICB0 = f (TA)

h parameter he = f (IC)

CE = 5 V

V

h parameter h

C = 2 mA

I

e = f (VCE)

Noise figure F = f (V

C = 0.2 mA, RS = 2 kΩ, f = 1 kHz

I

CE)

Semiconductor Group 8

BCW 60

BCX 70

Noise figure F = f (f)

C = 0.2 mA, RS = 2 kΩ,VCE = 5 V

I

Noise figure F = f (IC)

CE = 5 V, f = 120 Hz

V

Noise figure F = f (I

CE = 5 V, f = 1 kHz

V

C)

Noise figure F = f (I

CE = 5 V, f = 10 kHz

V

C)

Semiconductor Group 9