Datasheet BCV62C, BCV62B, BCV62A, BCV62 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D071

BCV62

PNP general purpose
double transistor

Product specification
Supersedes data of 1997 Jun 18

1999 Apr 08

Philips Semiconductors Product specification

PNP general purpose double transistor BCV62

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 30 V)

• Matched pair.

APPLICATIONS

• For use in applications where the working point must be
independent of temperature

• Current mirrors.

DESCRIPTION

PNP double transistor in a SOT143B plastic package.
NPN complement: BCV61.

MARKING

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

BCV62 3Mp BCV62B 3Kp
BCV62A 3Jp BCV62C 3Lp

PINNING

PIN DESCRIPTION

1 collector TR2; base TR1 and TR2
2 collector TR1
3 emitter TR1
4 emitter TR2

handbook, halfpage

Top view

4

3

12

21

TR1

34

MAM292

Fig.1 Simplified outline (SOT143B) and symbol.

TR2

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBS

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage TR1 open emitter −−30 V
collector-emitter voltage TR1 open base −−30 V
emitter-base voltage VCE=0 −−6V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current TR1 −−200 mA
total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

1999 Apr 08 2

Philips Semiconductors Product specification

PNP general purpose double transistor BCV62

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Device mounted on an FR4 printed-circuit board.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Transistor TR1

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

f

T

F noise figure I

thermal resistance from junction to ambient note 1 500 K/W

collector cut-off current IE= 0; VCB= −30 V −− −15 nA

I

= 0; VCB= −30 V; Tj= 150 °C −− −5µA

E

emitter cut-off current IC= 0; VEB= −5V −− −100 nA
DC current gain IC= −100 µA; VCE= −5 V 100 −−

I

=−2 mA; VCE= −5 V 100 − 800

C

collector-emitter saturation
voltage

base-emitter saturation
voltage

IC= −10 mA; IB= −0.5 mA −−75 −300 mV
I

= −100 mA; IB= −5mA −−250 −650 mV

C

IC= −10 mA; IB=− 0.5 mA; note 1 −−700 − mV

= −100 mA; IB= −5 mA; note 1 −−850 − mV

I

C

base-emitter voltage IC= −2 mA; VCE= −5 V; note 1 −600 −650 −750 mV

I

= −10 mA; VCE= −5 V; note 2 −− −820 mV

C

collector capacitance IE=ie= 0; VCB= −10 V − 4.5 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz

= −200 µA; VCE= −5 V; RS=2kΩ;

C

−− 10 dB

f = 1 kHz; B = 200 Hz

Transistor TR2

V

h

EBS

FE

base-emitter forward voltage IE= 250 mA; VCB=0 −− 1.5 V

I

=10µA; VCB= 0 400 −−mV

E

DC current gain IC= −2 mA; VCE= −5V

BCV62A 125 − 250
BCV62B 220 − 475
BCV62C 420 − 800

1999 Apr 08 3

Philips Semiconductors Product specification

PNP general purpose double transistor BCV62

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Transistors TR1 and TR2

I

------­I

I

E2

C1
E2

current matching of transistors
TR1 and TR2

emitter current for thermal
stability of −I

C1

= 0.5 mA; V

I

E2

I

= 0.5 mA; V

E2

V

= −5 V; note 3 ; (see Fig.2) −− 5mA

CE1

Notes

1. Decreasing −1.7 mV/°C with increasing temperature.

2. Decreasing −2 mV/°C with increasing temperature.

3. Device, without emitter resistors, mounted on an FR4 printed-circuit board.

CE1
CE1

= −5 V; T
= −5 V; T

≤ 25 °C 0.7 − 1.3

amb

≤ 150 °C 0.7 − 1.3

amb

handbook, halfpage

CE1

VCE1 =-5 V; device, without emitter resistors, mounted on an
FR4 printed-circuit board.

Voltage drop at contacts: .V

A

I

C1

21

TR1

34

V

CO

< U

CO

TR2

I

E2

A

V

CO

2

16 mV

-- -

^

=

T

3

Fig.2 Test circuit current matching.

IE2 = constant−V

MBK081

handbook, halfpage

−V

CE1

Fig.3 BCV62 with emitter resistors.

A

I

C1

21

TR1

34

R

E

TR2

IE2 = constant

R

E

MBK080

1999 Apr 08 4

Philips Semiconductors Product specification

PNP general purpose double transistor BCV62

−30

handbook, full pagewidth

−V

CE1max

(V)

−20

−10

0

−1

10

I

C1

1.3=

------- ­I

E2

(see Fig.3).

5 mA

10 mA

50 mA

1

10

RE (Ω)

Fig.4 Maximum collector-emitter voltage as a function of emitter resistance.

MBK083

I

E2 =

1 mA

2

10

1999 Apr 08 5

Philips Semiconductors Product specification

PNP general purpose double transistor BCV62

PACKAGE OUTLINE

Plastic surface mounted package; 4 leads SOT143B

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

34

Q

A

A

1

21

b

1

e

1

detail X

L

c

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

1.1

0.9

OUTLINE
VERSION

SOT143B

1

A

max

0.1

b

c

D

b

0.48

0.38

1

p

0.88

0.15

0.78

0.09

IEC JEDEC EIAJ

E

3.0

1.4

2.8

1.2

REFERENCES

e

1.9

1999 Apr 08 6

e

1.7

H

L

E

1

2.5

2.1

0.45

0.15

p

0.55

0.45

EUROPEAN

PROJECTION

ywvQ

0.1 0.10.2

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

PNP general purpose double transistor BCV62

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 08 7

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1999 SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 08 Document order number: 9397 75005558