Datasheet BCV 62B SMD Datasheet

PNP Silicon Double Transistor

• To be used as a current mirror

BCV62

• Good thermal coupling and VBE matching

• High current gain

3

4

• Low collector-emitter saturation voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

1)

C1 (2)

E1 (3) E2 (4)

C2 (1)

Tr.2Tr.1

EHA00013

Type Marking Pin Configuration Package

BCV62A BCV62B BCV62C

3Js 3Ks 3Ls

1 = C2 1 = C2 1 = C2

2 = C1 2 = C1 2 = C1

3 = E1 3 = E1 3 = E1

4 = E2 4 = E2 4 = E2

SOT143 SOT143 SOT143

Maximum Ratings

2

1

Parameter

Collector-emitter voltage

Symbol Value Unit

V

(transistor T1) Collector-base voltage (open emitter)

V

(transistor T1) Emitter-base voltage V

DC collector current I Peak collector current I

Base peak current (transistor T1) I Total power dissipation, TS = 99 °C

P

Junction temperature T Storage temperature T

Thermal Resistance

Junction - soldering point

2)

R

CEO

CBO

EBS

C CM

BM

tot j stg

thJS

30 V

30

6 100 mA 200

200 300 mW 150 °C

-65 ... 150

≤170 K/W

1

Pb-containing package may be available upon special request

2

For calculation of

R

please refer to Application Note Thermal Resistance

thJA

1

2007-04-20

Electrical Characteristics at TA = 25°C, unless otherwise specified

BCV62

Parameter

DC Characteristics of T1

Collector-emitter breakdown voltage

= 10 mA, IB = 0

I

C

Collector-base breakdown voltage

= 10 µA, IE = 0

I

C

Emitter-base breakdown voltage

= 10 µA, IC = 0

I

E

Collector cutoff current

= 30 V, IE = 0

V

CB

Collector cutoff current

= 30 V, IE = 0 , TA = 150 °C

V

CB

DC current gain 1)

= 0.1 mA, VCE = 5 V

I

C

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CBO

h

FE

30 - - V

30 - -

6 - -

- - 15 nA

- - 5 µA

100 - -

-

DC current gain 1)

= 2 mA, VCE = 5 V

I

C

Collector-emitter saturation voltage1)

= 10 mA, IB = 0.5 mA

I

C

= 100 mA, IB = 5 mA

I

C

Base-emitter saturation voltage 1)

= 10 mA, IB = 0.5 mA

I

C

= 100 mA, IB = 5 mA

I

C

Base-emitter voltage 1)

= 2 mA, VCE = 5 V

I

C

= 10 mA, VCE = 5 V

I

C

1) Pulse test: t ≤ 300µs, D = 2%

BCV62A BCV62B BCV62C

h

FE

V

CEsat

V

BEsat

V

BE(ON)

125 220 420

-

600

-

180 290 520

75

250

700 850

650

-

220 475 800

300 650

-

750 820

mV

2

2007-04-20

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BCV62

Parameter

DC Characteristics

Base-emitter forward voltage

= 10 µA

I

E

= 250 mA

I

E

Matching of transistor T1 and transistor T2

= 0.5mA and V

at I

E2

= 25 °C

T

A

= 150 °C

T

A

CE1

= 5V

Thermal coupling of transistor T1 and

1)

transistor T2 Maximum current of thermal stability of I

T1: VCE = 5V

C1

AC characteristics of transistor T1

Transition frequency

Symbol Values Unit

min. typ. max.

V

BES

IC1 / I

I

E2

f

T

C2

0.4

-

0.7

-

1.8

-

1.3

- 5 - mA

- 250 - MHz

V

-

= 10 mA, VCE = 5 V, f = 100 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

Emitter-base capacitance

= 0.5 V, f = 1 MHz

V

EB

Noise figure

= 200 µA, VCE = 5 V, RS = 2 kΩ,

I

C

f = 1 kHz,

∆ f = 200 Hz

Short-circuit input impedance

= 1 mA, VCE = 10 V, f = 1 kHz

I

C

Open-circuit reverse voltage transf.ratio

= 1 mA, VCE = 10 V, f = 1 kHz

I

C

Short-circuit forward current transf.ratio

= 1 mA, VCE = 10 V, f = 1 kHz

I

C

Open-circuit output admittance

C

cb

eb

- 1.5 - pF

- 8 -

F - 2 - dB

h

11e

12e

21e

22e

- 4.5 -

- 2 - 10

100 - 900

- 30 -

kΩ

-

µS

-4

= 1 mA, VCE = 10 V, f = 1 kHz

I

C

1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm

3

2007-04-20

Test circuit for current matching

A

Ι

C1

21

BCV62

V

CE1

...

T2T1

Ι

= constant

E2

43

V

CO

V

CO

EHN00003

Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV

Characteristic for determination of

I

as parameter under condition of IC1/IE2 = 1.3

E2

A

Ι

V

CE1

C1

...

21

T1 T2

V

at specified RE range with

CE1

Ι

= constant

E2

43

R

E

R

E

Note: BCV62 with emitter resistors

EHN00004

4

2007-04-20

BCV62

Collector-base capacitance C Emitter-base capacitance C

12

pF

10

)

9

EB

(C

8

CB

C

7 6 5 4 3 2 1 0

0 4 8 12 16

CEB

eb

= ƒ(V

cb

= ƒ(V

CB

)

EB

CCB

V

VCB(VEB)

22

)

Total power dissipation P

350

= f(TS)

tot

mW

250

tot

P

200

150

100

50

0

0 15 30 45 60 75 90 105 120

°C

T

150

S

Permissible pulse load

P

totmax

P

totmax totPDC

10

5

/ P

3

2

1

0

10

-6

= f (tp)

totDC

=

D

10-510-410-310

EHP00941BCV 62

t

p

t

p

T

D

=

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

-2

s

t

p

10

0

5

2007-04-20

Package Outline

Foot Print

Package SOT143

±0.1

0.8

0.2

+0.1

-0.05

2.9

1.9

12

1.7

B

34

+0.1

0.4

-0.05

0.8 0.81.2

0.25MB

0.15 MIN.

±0.15

2.4

0.2

±0.1

1

0.1 MAX.

10˚ MAX.

0.08...0.15

0...8˚

M

A

±0.1

1.3

10˚ MAX.

A

BCV62

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel

Pin 1

1.2

0.8

RFs

4

0.8

0.9 1.1 0.9

Manufacturer

2005, June

56

Date code (YM)

BFP181

Type code

0.2

Pin 1

3.15

8

2.6

1.15

6

2007-04-20

BCV62

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

7

2007-04-20