Page 1
PNP Silicon Darlington Transistors
g
BCV26, BCV46
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 (NPN)
1
Type Marking Pin Configuration Package
3
BCV26
BCV46
Maximum Ratings
Parameter
FDs
FEs
1 = B
1 = B
Symbol
2 = E
2 = E
3 = C
3 = C
SOT23
SOT23
BCV26 BCV46
2
VPS05161
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current 100
Peak base current
Total power dissipation, TS = 74 °C P
Junction temperature
Storage temperature
V
V
V
I
C
I
CM
I
B
I
BM
T
T
CEO
CBO
EBO
tot
j
st
30 60 V
40 80
10 10
500 mA
800
200
360 mW
150 °C
-65 ... 150
Thermal Resistance
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
R
thJS
210 K/W
1 Jul-13-2001
Page 2
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BCV26, BCV46
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 10 mA, IB = 0
I
C
Collector-base breakdown voltage
I
= 100 µA, IB = 0
C
Emitter-base breakdown voltage
= 10 µA, IC = 0
I
E
Collector cutoff current
= 30 V, IE = 0
V
CB
V
= 60 V, IE = 0
CB
Collector cutoff current
= 30 V, IE = 0 , TA = 150 °C
V
CB
= 60 V, IE = 0 , TA = 150 °C
V
CB
BCV26
BCV46
BCV26
BCV46
BCV26
BCV46
BCV26
BCV46
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
30
60
40
80
10 - -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
100
10
10
V
nA
µA
Emitter cutoff current
= 4 V, IC = 0
V
EB
DC current gain 1)
I
= 100 µA, VCE = 1 V
C
DC current gain 1)
= 10 mA, VCE = 5 V
I
C
DC current gain 1)
I
= 100 mA, VCE = 5 V
C
DC current gain 1)
= 0.5 A, VCE = 5 V
I
C
BCV26
BCV46
BCV26
BCV46
BCV26
BCV46
BCV26
BCV46
I
EBO
h
FE
h
FE
h
FE
h
FE
- - 100 nA
4000
2000
10000
4000
20000
10000
4000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1) Pulse test: t ≤ 300µs, D = 2%
2 Jul-13-2001
Page 3
BCV26, BCV46
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter saturation voltage1)
I
= 100 mA, IB = 0.1 mA
C
Base-emitter saturation voltage 1)
I
= 100 mA, IB = 0.1 mA
C
AC Characteristics
Transition frequency
I
= 50 mA, VCE = 5 V, f = 100 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
V
CEsat
V
BEsat
f
T
C
cb
- - 1 V
- - 1.5
- 200 - MHz
- 4.5 - pF
1) Pulse test: t ≤ 300µs, D = 2%
3 Jul-13-2001
Page 4
BCV26, BCV46
)
Total power dissipation P
400
mW
300
tot
250
P
200
150
100
50
0
0 15 30 45 60 75 90 105 120
= f(TS)
tot
°C
T
Collector-base capacitance C
Emitter-base capacitance C
10
C
EB0
()
C
CB0
pF
C
EB
CB0
= f (V
CB
= f (V
EHP00291BCV 26/46
CBO
EBO
)
5
C
EB0
0
150
S
-1 1
10
10
0
V
10
()
VV
EB0
CB0
Permissible pulse load
P
totmax
P
totmax
totPDC
10
10
10
10
/ P
3
5
2
5
1
5
0
10
= f (tp)
totDC
=
D
-6
10-510-410-310
Transition frequency f
V
= 5V
CE
EHP00292BCV 26/46
t
p
t
p
T
T
D
=
3
10
f
T
MHz
= f (IC)
T
EHP00294BCV 26/46
0
0.005
0.01
0.02
0.05
10
2
0.1
0.2
5
1
10
03
10
10
1
10
2
10mA
Ι
C
-2
0.5
0
10
s
t
p
4 Jul-13-2001
Page 5
BCV26, BCV46
Base-emitter saturation voltage
I
= f (V
C
Ι
C
10
mA
10
10
10
3
2
5
1
5
0
0
), hFE = 1000
BEsat
150
25
-50
1.0 2.0
˚C
˚C
˚C
V
EHP00295BCV 26/46
V
BEsat
3.0
Collector-emitter saturation voltage
I
= f (V
C
Ι
C
10
mA
10
10
10
3
2
5
1
5
0
0
), hFE = 1000
CEsat
0.5 1.0
150
25
-50
V
EHP00296BCV 26/46
˚C
˚C
˚C
V
CEsat
1.5
Collector cutoff current I
V
= V
Ι
CB
CBO
10
nA
10
10
10
10
CEmax
4
3
2
1
0
0
max
50 100
CBO
typ
= f (TA)
EHP00297BCV 26/46
˚C
T
A
150
DC current gain h
V
= 5V
CE
6
10
5
h
FE
10
125
25
-55
0
5
10
5
4
10
5
3
10
-1 3
10
= f (IC)
FE
˚C
˚C
˚C
10
EHP00298BCV 26/46
1
10
2
10mA
Ι
C
5 Jul-13-2001
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