Datasheet BC846ALT1G Datasheet (ON Semiconductor)

BC846ALT1G Series

General Purpose
Transistors

NPN Silicon

Features

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: >4000 V

ESD Rating − Machine Model: >400 V

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage

BC846
BC847, BC850
BC848, BC849

Collector−Base Voltage

BC846
BC847, BC850
BC848, BC849

Emitter−Base Voltage

BC846
BC847, BC850
BC848, BC849

Collector Current − Continuous I

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board,

(Note 1)
TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

Total Device Dissipation

Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

1. FR− 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.

V

CEO

V

CBO

V

EBO

P

R

P

R

TJ, T

65
45
30

80
50
30

6.0

6.0

5.0

stg

100 mAdc

225

1.8mWmW/°C

556 °C/W

300

2.4mWmW/°C

417 °C/W

−55 to
+150

C

D

q

JA

D

q

JA

Vdc

Vdc

Vdc

°C

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COLLECTOR

3

1

BASE

2

EMITTER

3

1

2

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

XX M G

G

1

XX = Device Code
M = Date Code*
G =Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2009

December, 2009 − Rev. 9

1 Publication Order Number:

BC846ALT1/D

BC846ALT1G Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC846A,B

= 10 mA) BC847A,B,C, BC850B,C

(I

C

BC848A,B,C, BC849B,C

Collector−Emitter Breakdown Voltage BC846A,B

(I

= 10 mA, VEB = 0) BC847A,B,C BC850B,C

C

BC848A,B,C, BC849B,C

Collector−Base Breakdown Voltage BC846A,B

(I

= 10 mA) BC847A,B,C, BC850B,C

C

BC848A,B,C, BC849B,C

Emitter−Base Breakdown Voltage BC846A,B

(I

= 1.0 mA) BC847A,B,C, BC850B,C

E

BC848A,B,C, BC849B,C

Collector Cutoff Current (VCB = 30 V)

(V

= 30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain BC846A, BC847A, BC848A

(I

= 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B

C

BC847C, BC848C

= 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A

(I

C

BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector−Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base −Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base −Emitter Voltage (I

= 10 mA, VCE = 5.0 V)

C

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

C

Output Capacitance (VCB = 10 V, f = 1.0 MHz) C

Noise Figure (IC = 0.2 mA,

V

= 5.0 Vdc, RS = 2.0 kW, BC846A,B, BC847A,B,C, BC848A,B,C

CE

f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C

Figure 1.

Symbol Min Typ Max Unit

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

V

CE(sat)

V

BE(sat)

V

BE(on)

f

obo

NF

FE

T

65
45
30

80
50
30

80
50
30

6.0

6.0

5.0

−

−

−

−

−

110
200

420

−

−

−

−

580

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

90
150
270

180
290

520

−

−

0.7

0.9

660

−

−

−

−

−

−

−

−

−

−

−

−

−

15

5.0

−

−

−

220
450

800

0.25

0.6

−

−

700
770

nA
mA

mV

100 − − MHz

− − 4.5 pF

dB

−

−

−

−

10

4.0

V

V

V

V

−

V

V

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2

BC846ALT1G Series

BC847, BC848, BC849, BC850

2.0

1.5

1.0

0.8

0.6

0.4

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

0.2 0.5 1.0 10 20

2.0 5.0

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

2.0

1.6

1.2
IC =

10 mA

0.8

IC = 50 mA IC = 100 mA

IC =

20 mA

VCE = 10 V
T

= 25°C

A

50

IC = 200 mA

100

200

V, VOLTAGE (VOLTS)

1.0
TA = 25°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.2 0.5 1.0 10 20

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

2.0

IC, COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” Voltages

1.0

-55°C to +125°CTA = 25°C

1.2

1.6

2.0

2.4

50

307.05.03.00.70.30.1

10070

0.4

, COLLECTOR-EMITTER VOLTAGE (V)

CE

V

0.02 1.0

0.1

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

0.4 0.6 1.0 10 20

0.8 4.0 8.0

VR, REVERSE VOLTAGE (VOLTS)

C

ib

C

ob

2.0 6.0

Figure 5. Capacitances

TA = 25°C

10020

2.8

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

0.2 1.0

IC, COLLECTOR CURRENT (mA)

10 100

Figure 4. Base−Emitter Temperature Coefficient

400

300

200

100

80

60

40

30

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

40

0.7 1.0 10 202.0

IC, COLLECTOR CURRENT (mAdc)

VCE = 10 V
T

= 25°C

A

307.05.03.00.5

50

Figure 6. Current−Gain − Bandwidth Product

http://onsemi.com

3

VCE = 5 V
T

= 25°C

A

2.0

1.0

0.5

, DC CURRENT GAIN (NORMALIZED)

0.2

FE

h

0.1 1.0

0.2

10 100

IC, COLLECTOR CURRENT (mA)

BC846ALT1G Series

BC846

1.0

TA = 25°C

0.8
V

BE(sat)

0.6
VBE @ VCE = 5.0 V

0.4

V, VOLTAGE (VOLTS)

0.2

V

CE(sat)

0

0.2 1.0

0.5 2.0 5.0

@ IC/IB = 10

@ IC/IB = 10

10 200

20 50 100

IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain

2.0

1.6

20 mA

1.2

0.8

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0.05 0.2 0.5 2.0 5.0

0.02 1.0

0.1

50 mA

IC =

10 mA

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

40

20

10

Figure 8. “On” Voltage

1.0

TA = 25°C

1.4

100 mA

200 mA

10020

1.8

2.2

2.6

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

3.0

0.2 2.0

0.5 5.0 20

qVB for V

BE

-55°C to 125°C

1.0

IC, COLLECTOR CURRENT (mA)

10 200

50 100

Figure 10. Base−Emitter Temperature Coefficient

TA = 25°C

C

ib

500

200

100

VCE = 5 V
T

= 25°C

A

6.0

C, CAPACITANCE (pF)

4.0

2.0

0.1 0.2 1.0 50

0.5 5.0 20

VR, REVERSE VOLTAGE (VOLTS)

C

ob

2.0 10

Figure 11. Capacitance

50

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT

100

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4

1.0 10 50

IC, COLLECTOR CURRENT (mA)

5.0

100

Figure 12. Current−Gain − Bandwidth Product

BC846ALT1G Series

ORDERING INFORMATION

Device Marking Package Shipping

BC846ALT1G

BC846ALT3G SOT−23

BC846BLT1G

BC846BLT3G SOT−23

BC847ALT1G

BC847ALT3G SOT−23

BC847BLT1G

BC847BLT3G SOT−23

BC847CLT1G

BC847CLT3G SOT−23

BC848ALT1G

BC848BLT1G

BC848BLT3G SOT−23

BC848CLT1G

BC848CLT3G SOT−23

BC849BLT1G

BC849BLT3G SOT−23

BC849CLT1G

BC849CLT3G SOT−23

BC850BLT1G

BC850CLT1G

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-

cifications Brochure, BRD8011/D.

1A

1B

1E

1F

1G

1J

1K

1L

2B

2C

2F

2G

SOT−23

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

†

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5

BC846ALT1G Series

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

D

H

SEE VIEW C

E

0.25

3

E

12

b

e

q

A

L

A1

L1

VIEW C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015

c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047

e 1.78 1.90 2.04 0.070

L 0.10 0.20 0.30 0.004

L1

H

E

STYLE 6:

PIN 1. BASE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

2. EMITTER

3. COLLECTOR

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.95

0.037

0.037

2.0

0.079

0.9

0.035

0.8

0.031

mm

ǒ

SCALE 10:1

inches

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Sales Representative

BC846ALT1/D

6