Page 1
BC 817-16W
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC807W, BC808W (PNP)
Type Marking Ordering Code Pin Configuration Package
BC 817-16W 6As Q62702-C2320 1 = B 2 = E 3 = C SOT-323
BC 817-25W 6Bs Q62702-C2278 1 = B 2 = E 3 = C SOT-323
BC 817-40W 6Cs Q62702-C2321 1 = B 2 = E 3 = C SOT-323
BC 818-16W 6Es Q62702-C2322 1 = B 2 = E 3 = C SOT-323
BC 818-25W 6Fs Q62702-C2323 1 = B 2 = E 3 = C SOT-323
BC 818-40W 6Gs Q62702-C2324 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
BC 817 W
BC 818 W
Collector-base voltage
BC 817 W
BC 818 W
Emitter-base voltage
DC collector current
Peak collector current
V
V
V
I
C
I
CM
CEO
CBO
EBO
V
45
25
50
30
5
500 mA
1 A
Base current
Total power dissipation,
T
= 130°C
S
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
I
P
T
T
R
R
B
tot
j
stg
thJA
thJS
100 mA
250 mW
150 °C
- 65 ... + 150
≤
215 K/W
≤
80
1 Dec-19-1996
Page 2
BC 817-16W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA,
C
I
= 10 mA,
C
I
= 0 , BC 817 W
B
I
= 0 , BC 818 W
B
Collector-base breakdown voltage
I
= 10 µA,
C
I
= 10 µA,
C
I
= 0 , BC 817 W
B
I
= 0 , BC 818 W
B
Base-emitter breakdown voltage
I
= 10 µA,
E
I
C
= 0
Collector-base cutoff current
V
V
CB
CB
= 25 V,
= 25 V,
T
= 25 °C
A
T
= 150 °C
A
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
45
25
50
30
-
-
-
-
5 - -
-
-
-
-
V
-
-
-
-
100 nA
50
µA
Emitter cutoff current
V
= 4 V,
EB
I
C
= 0
DC current gain
I
= 100 mA,
C
I
= 100 mA,
C
I
= 100 mA,
C
I
= 300 mA,
C
I
= 300 mA,
C
I
= 300 mA,
C
V
= 1 V, BC ... 16 W
CE
V
= 1 V, BC ... 25 W
CE
V
= 1 V, BC ... 40 W
CE
V
= 1 V, BC ... 16 W
CE
V
= 1 V, BC ... 25 W
CE
V
= 1 V, BC ... 40 W
CE
Collector-emitter saturation voltage 1)
I
= 500 mA,
C
I
= 50 mA
B
Base-emitter saturation voltage 1)
I
= 500 mA,
C
I
= 50 mA
B
1) Pulse test: t < 300µs; D < 2%
I
EBO
h
FE
V
CEsat
V
BEsat
- - 100
100
160
250
60
100
170
160
250
350
-
-
-
250
400
630
-
-
-
- - 0.7
- - 1.2
nA
-
V
Semiconductor Group
2 Dec-19-1996
Page 3
NPN Silicon AF Transistor
BC 817-16W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
= 50 mA,
C
V
= 5 V, f = 100 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
f
C
C
T
MHz
- 170 -
cb
pF
- 6 -
eb
- 60 -
Semiconductor Group
3 Dec-19-1996
Page 4
BC 817-16W
Total power dissipation
P
tot
* Package mounted on epoxy
300
mW
P
tot
200
150
100
50
= f (
T
A
T
*;
T
)
A
S
Permissible Pulse Load
R
thJS
= f(
t
)
p
3
10
K/W
R
thJS
T
S
10
10
10
2
1
0.5
0.2
0.1
0.05
0
0.02
0.01
0.005
D = 0
0
0 20 40 60 80 100 120 °C 150
Permissible Pulse Load
3
10
-
P
/
P
totDC
10
10
2
1
totmax
P
totmax
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
/
P
totDC
TA,T
S
= f(
-1
10
-6
10
t
)
Collectot cutoff current
p
V
= 60V
CB
10
-5
10
-4
10
-3
I
CBO
-2
10
= f (
T
10
-1
t
p
)
A
0
10
s
0
10
10
-6
10
-5
Semiconductor Group
10
-4
10
-3
10
-2
10
-1
t
p
0
10
s
4 Dec-19-1996
Page 5
BC 817-16W
DC current gain
V
= 1V
CE
h
= f (
I
FE
)
C
Transition frequency
f
T
= f (
I
)
C
VCE = 5V
Base-emitter saturation voltage
I
C
= f (
V
BEsat
),
h
FE
= 10
Collector-emitter saturation voltage
I
= f (
C
V
CEsat
),
h
= 10
FE
Semiconductor Group
5 Dec-19-1996
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