Page 1
BC637, BC639, BC639−16
High Current Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Emitter Voltage
BC637
BC639
Collector - Base Voltage
BC637
BC639
Emitter - Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
CEO
V
CBO
EBO
P
P
TJ, T
C
D
D
−55 to +150 °C
stg
60
80
60
80
5.0 Vdc
1.0 Adc
625
5.0
800
12
Vdc
Vdc
mW
mW/°C
mW
mW/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
TO−92
CASE 29
STYLE 14
3
BASE
1
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAMS
BC
63x
AYWWG
G
AYWWG
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
BC63
9−16
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 0
1 Publication Order Number:
x = 7 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
BC637/D
Page 2
BC637, BC639, BC639−16
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1)
(I
= 10 mAdc, IB = 0) BC637
C
Collector − Emitter Zero−Gate Breakdown Voltage(Note 1)
= 100 mAdc, IB = 0) BC639−16
(I
C
Collector − Base Breakdown Voltage
= 100 mAdc, IE = 0) BC637
(I
C
Emitter − Base Breakdown Voltage
= 10 mAdc, IC = 0)
(I
E
Collector Cutoff Current
(V
= 30 Vdc, IE = 0)
CB
= 30 Vdc, IE = 0, TA = 125°C)
(V
CB
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
= 5.0 mAdc, VCE = 2.0 Vdc)
C
(IC = 150 mAdc, VCE = 2.0 Vdc) BC637
BC639−16ZLT1
(IC = 500 mA, VCE = 2.0 V)
Collector − Emitter Saturation Voltage
(I
= 500 mAdc, IB = 50 mAdc)
C
Base − Emitter On Voltage
(I
= 500 mAdc, VCE = 2.0 Vdc)
C
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
= 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
C
Output Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
Input Capacitance
(V
= 0.5 Vdc, IC = 0, f = 1.0 MHz)
EB
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
BC639
BC639
BC639
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(on)
f
C
C
FE
60
80
−
−
−
−
120 − −
60
80
−
−
−
−
5.0 − − Vdc
−
−
25
40
40
100
25
−
−
−
−
−
−
−
100
10
−
160
160
250
−
− − 0.5
− − 1.0
T
ob
ib
− 200 −
− 7.0 −
− 50 −
Vdc
Vdc
Vdc
nAdc
mAdc
Vdc
Vdc
MHz
pF
pF
−
ORDERING INFORMATION
Device Package Shipping
BC637G TO−92
5000 Units / Bulk
(Pb−Free)
BC639G TO−92
5000 Units / Bulk
(Pb−Free)
BC639RL1G TO−92
2000 / Tape & Reel
(Pb−Free)
BC639ZL1G TO−92
2000 / Ammo Box
(Pb−Free)
BC639−16ZL1G TO−92
2000 / Ammo Box
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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2
Page 3
BC637, BC639, BC639−16
1000
500
200
PD TA 25°C
SOA = 1S
100
50
PD TC 25°C
20
10
5
, COLLECTOR CURRENT (mA)
C
I
2
P
D
P
D
TA 25°C
TC 25°C
1
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
BC635
BC637
BC639
Figure 1. Active Region Safe Operating Area
500
300
100
50
20
T
f, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
VCE = 2 V
500
VCE = 2 V
200
100
, DC CURRENT GAIN
50
FE
h
1001 2 3 4 5 7 10 20 30 40 50 70
20
1 3 5 10 30 50 100 300 500 1000
I
, COLLECTOR CURRENT (mA)
C
Figure 2. DC Current Gain
1
0.8
0.6
0.4
V, VOLTAGE (VOLTS)
0.2
0
1 10 100 1000
V
@ IC/IB = 10
BE(sat)
V
@ IC/IB = 10
CE(sat)
IC, COLLECTOR CURRENT (mA)
V
BE(on)
@ VCE = 2 V
Figure 3. Current−Gain — Bandwidth Product
−0.2
−1.0
VCE = 2 VOLTS
DT = 0°C to +100°C
−1.6
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
V
−2.2
1 3 5 10 30 50 100 300 500 1000
I
C
Figure 5. Temperature Coefficients
Figure 4. “Saturation” and “On” Voltages
, COLLECTOR CURRENT (mA)
qV for V
BE
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3
Page 4
BC637, BC639, BC639−16
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−1 1
ISSUE AM
SEATING
PLANE
R
T
SEATING
PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
H
V
1
G
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
MILLIMETERSINCHES
N
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
K
XX
G
D
J
V
1
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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For additional information, please contact your local
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BC637/D
4
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