Page 1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
55 Vdc
Collector–Base Voltage V
CBO
80 Vdc
Emitter–Base Voltage V
EBO
12 Vdc
Collector Current — Continuous I
C
1.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
T emperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V
(BR)CEO
55 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
80 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
12 — — Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
I
CES
— — 50 nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
I
CBO
— — 50 nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
I
EBO
— — 50 nAdc
Order this document
by BC618/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR 1
BASE
2
EMITTER 3
Page 2
BC618
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
Collector–Emitter Saturation Voltage
(IC = 200 mA, IB = 0.2 mA)
V
CE(sat)
— — 1.1 Vdc
Base–Emitter Saturation Voltage
(IC = 200 mA, IB = 0.2 mA)
V
BE(sat)
— — 1.6 Vdc
DC Current Gain
(IC = 100 µA, VCE = 5.0 Vdc)
(IC = 10 mA, VCE = 5.0 Vdc)
(IC = 200 mA, VCE = 5.0 Vdc)
(IC = 1.0 A, VCE = 5.0 Vdc)
h
FE
2000
4000
10000
4000
—
—
—
—
—
—
50000
—
—
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz)
f
T
150 — — MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
C
ob
— 4.5 7.0 pF
Input Capacitance
(VEB = 5.0 V , IE = 0, f = 1.0 MHz)
C
ib
— 5.0 9.0 pF
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Page 3
BC618
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (kΩ)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (kΩ)
5.0
50
70
100
200
30
10
20
1.0
101020 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS
≈
0
IC = 1.0 mA
100 µA
10 µA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 µA
10 µA
e
n
, NOISE VOLTAGE (nV)
i
n
, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 100
0
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 µA
100 µA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 100
0
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 µA
100 µA
IC = 1.0 mA
V
T
, TOT AL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50k 100 k
Page 4
BC618
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SMALL–SIGNAL CHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (µA)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25°C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|h
fe
|, SMALL–SIGNAL CURRENT GAIN
h
FE
, DC CURRENT GAIN
V
CE
, COLLECTOR–EMITTER VOL TAGE (VOLTS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
C
ibo
C
obo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
VCE = 5.0 V
f = 100 MHz
TJ = 25
°
C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
7.0 10 20 30 50 70 100 200 300
500
TJ = 125°C
25°C
–55°C
VCE = 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
TJ = 25°C
IC =
10 mA
50 mA 250 mA 500 mA
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
–1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
7.0 10 20 30 50 70 100 200 300 500
V
BE(sat)
@ IC/IB = 1000
R
V
, TEMPERATURE COEFFICIENTS (mV/ C)
°
θ
TJ = 25°C
V
BE(on)
@ VCE = 5.0 V
V
CE(sat)
@ IC/IB = 1000
–2.0
–3.0
–4.0
–5.0
–6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
25°C TO 125°C
–55°C TO 25°C
*R
q
VC
FOR V
CE(sat)
qVB FOR V
BE
25°C TO 125°C
–55°C TO 25°C
*APPLIES FOR IC/IB ≤ hFE/3.0
Page 5
BC618
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0 k 2.0 k 5.0 k 10 k
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10
0.6 1.0 2.0 4.0 6.0 10 20
40
I
C
, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Z
θ
JC(t)
= r(t)
•
R
θ
JCTJ(pk)
– TC = P
(pk) Zθ
JC(t)
Z
θ
JA(t)
= r(t)
•
R
θ
JATJ(pk)
– TA = P
(pk) Zθ
JA(t)
1.0 ms
100 µs
TC = 25°C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
t
P
P
P
P
P
t
1
1/f
DUTY CYCLE
+
t1f
+
t
1
t
P
PEAK PULSE POWER = P
P
Page 6
BC618
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
P ACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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