Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ok, halfpage
M3D050
BA481
UHF mixer diode
Product specification
File under Discrete Semiconductors, SC01
1996 Mar 19
Page 2
Philips Semiconductors Product specification
UHF mixer diode BA481
FEATURES
• Low forward voltage
• Hermetically-sealed leaded glass
package
DESCRIPTION
Planar Schottky barrier diode encapsulated in a hermetically-sealed
subminiature SOD68 (DO-34) glass package. The diode is suitable for
mounting on a 2 E (5.08 mm) pitch.
• Low diode capacitance.
APPLICATIONS
handbook, halfpage
k
a
• UHF mixer
• Sampling circuits
• Modulators
Cathode indicated by a grey band.
MAM193
• Phase detection.
Fig.1 Simplified outline (SOD68; DO-34), and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
junction temperature
−
−65
−
4V
30 mA
+125 °C
100 °C
1996 Mar 19 2
Page 3
Philips Semiconductors Product specification
UHF mixer diode BA481
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
r
s
F noise figure f = 900 MHz; note 1 8 dB
C
d
Note
1. The local oscillator is adjusted for a diode current of 2 mA.
IF amplifier noise F
forward voltage see Fig.2
=1mA
I
F
=10mA
I
F
reverse current VR= 4 V; see Fig.3
V
R
=4V; T
=60°C; see Fig.3
amb
450 mV
600 mV
10
100
µA
µA
series resistance f = 1 kHz; IF=5mA 13 Ω
diode capacitance f = 1 MHz; VR= 0 V; see Fig.4
= 1.5 dB; f = 35 MHz.
if
1.1 pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 320 KW
Note
1. Refer to SOD68 standard mounting conditions.
1996 Mar 19 3
Page 4
Philips Semiconductors Product specification
UHF mixer diode BA481
GRAPHICAL DATA
0.6
MGC684
VF (V)
2
10
handbook, halfpage
I
F
(mA)
10
1
−1
10
(1) T
(2) T
(3) T
(4) T
amb
amb
amb
amb
= 100°C.
=60°C.
=25°C.
= −40°C.
(1)
(2)
(3)
(4)
Fig.2 Forward current as a function of forward
voltage; typical values.
4
10
handbook, halfpage
I
R
(nA)
3
10
2
10
MGC685
(1)
(2)
(3)
10
(4)
1
−1
0.80 0.2 0.4
10
(1) T
(2) T
(3) T
(4) T
amb
amb
amb
amb
= 100°C.
=60°C.
=25°C.
= −40°C.
210
3
VR (V)
4
Fig.3 Reverse current as a function of reverse
voltage; typical values.
1.00
C
d
(pF)
0.75
0.50
0.25
01234
f =1 MHz.
MGC683
VR (V)
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1996 Mar 19 4
Page 5
Philips Semiconductors Product specification
UHF mixer diode BA481
PACKAGE OUTLINE
handbook, full pagewidth
1.6
max
Dimensions in mm.
The grey marking band indicates the cathode.
25.4 min 25.4 min
3.04
max
0.55
max
MSA212 - 1
Fig.5 SOD68 (DO-34).
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 19 5
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