Page 1
2 – 16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26836
Features
• High Output Power:
18.0␣ dBm Typical P
• High Gain:
9.0 dB Typical GSS at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available
at 12␣ GHz
1 dB
[1]
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
G
SS
NF
G
A
P
1 dB
g
m
I
DSS
V
P
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA f = 12.0 GHz dB 7.0 9.0
Optimum Noise Figure: VDS = 3 V, IDS = 10 mA f = 12.0 GHz dB 2.2
O
Gain @ NFO: VDS = 3 V, IDS = 10 mA f = 12.0 GHz dB 6.0
Power Output @ 1 dB Gain Compression: f = 12.0 GHz dB m 15.0 18.0
VDS = 5 V, IDS = 30 mA
Transconductance: VDS = 3 V, VGS = 0 V mmho 15 35
Saturated Drain Current: VDS = 3 V, VGS = 0 V mA 30 50 90
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.5 -1.5 -0.5
Description
The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16␣ GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
= 25° C
A
36 micro-X Package
5-67
5965-8704E
Page 2
ATF-26836 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Thermal Resistance: θjc = 350°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
Drain-Source Voltage V +7
Gate-Source Voltage V -4
Gate-Drain Voltage V -8
Drain Current mA I
Power Dissipation
[2,3]
m W 275
Channel Temperature ° C 175
Storage Temperature
[4]
°C -65 to +175
= 150°C
CH
[5]
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
ATF-26836-TR1 1000 7"
ATF-26836-STR 10 strip
DSS
[1]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
CASE
= 25°C.
2. T
3. Derate at 2.9 mW/°C for
>79°C.
T
CASE
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
ATF-26836 Typical Performance, T
25
20
MSG
15
10
GAIN (dB)
2
|S21|
5
0
2.0 4.0 6.0 8.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 30 mA.
10.0 12.0 16.0
25
20
15
10
GAIN (dB)
5
0
2.0 4.0 6.0 8.0
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 10 mA.
= 25° C
A
MSG
FREQUENCY (GHz)
|S21|
MAG
2
10.0 12.0 16.0
5-68
Page 3
Typical Scattering Parameters, Common Emitter, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
=3 V, I
DS
=␣ 10 mA
DS␣
S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
2.0 .94 -38 8.2 2.57 138 -27.1 .044 60 .74 -26
3.0 .90 -55 7.8 2.45 120 -24.9 .057 51 .71 -35
4.0 .84 -72 7.6 2.41 102 -22.9 .072 44 .71 -44
5.0 .75 -92 8.0 2.50 82 -20.6 .093 30 .66 -53
6.0 .64 -117 8.1 2.55 61 -19.3 .109 15 .60 -64
7.0 .52 -155 8.3 2.60 37 -18.1 .124 5 .51 -78
8.0 .49 163 7.9 2.47 14 -17.5 .133 -12 .41 -92
9.0 .52 126 7.2 2.30 -7 -16.9 .143 -21 .30 -106
10.0 .56 100 6.4 2.10 -28 -16.8 .144 -32 .24 -125
11.0 .61 78 5.6 1.91 -47 -17.1 .140 -41 .18 -154
12.0 .67 58 4.7 1.71 -66 -17.1 .139 -49 .15 168
13.0 .69 45 3.9 1.57 -83 -17.3 .137 -61 .17 134
14.0 .72 35 3.0 1.42 -98 -17.2 .138 -66 .19 107
15.0 .72 22 2.5 1.33 -115 -17.2 .138 -77 .23 89
16.0 .72 13 2.0 1.26 -128 -17.4 .135 -85 .27 71
22
Typical Scattering Parameters, Common Emitter, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
=5 V, I
DS
=␣ 30 mA
DS␣
S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
2.0 .94 -44 9.0 2.82 130 -30.2 .031 65 .80 -31
3.0 .86 -63 8.5 2.65 110 -28.4 .038 56 .80 -43
4.0 .78 -81 8.0 2.51 89 -26.9 .045 47 .79 -52
5.0 .68 -97 7.9 2.49 71 -25.5 .053 41 .78 -58
6.0 .57 -118 8.1 2.53 51 -24.4 .060 39 .76 -67
7.0 .43 -151 8.5 2.65 28 -22.4 .076 38 .73 -80
8.0 .37 165 8.5 2.66 3 -20.6 .093 30 .69 -99
9.0 .40 122 8.0 2.52 -20 -18.0 .126 15 .64 -119
10.0 .47 96 7.7 2.42 -42 -16.4 .152 3 .66 -140
11.0 .55 75 7.5 2.37 -66 -15.1 .176 -4 .63 -166
12.0 .61 53 7.4 2.35 -88 -13.8 .205 -19 .64 168
13.0 .71 33 7.4 2.34 -116 -13.2 .220 -39 .71 132
14.0 .71 10 6.7 2.17 -143 -13.5 .212 -56 .78 104
15.0 .65 -10 5.7 1.93 -170 -14.0 .200 -72 .85 79
16.0 .58 -30 4.2 1.62 166 -14.9 .180 -93 .98 61
A model for this device is available in the DEVICE MODELS section.
22
5-69
Page 4
36 micro-X Package Dimensions
2.15
(0.085)
GATE
SOURCE
1
SOURCE
4
268
2
DRAIN
2.11 (0.083) DIA.
3
0.508
(0.020)
1.45 ± 0.25
(0.057 ± 0.010)
0.56
(0.022)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
2.54
(0.100)
4.57 ± 0.25
0.180 ± 0.010
0.15 ± 0.05
(0.006 ± 0.002)
5-70
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