Datasheet 85HFR120 Specification

VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series

DO-5 (DO-203AB)

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Standard Recovery Diodes,

PRIMARY CHARACTERISTICS

I

F(AV)

Package DO-5 (DO-203AB)

Circuit configuration Single

(Stud Version), 85 A

FEATURES

• High surge current capability

• Stud cathode and stud anode version

• Leaded version available

• Types up to 1600 V V

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Battery chargers

• Converters

85 A

• Power supplies

• Machine tool controls

•Welding

Vishay Semiconductors

RRM

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

T

J

T

C

50 Hz 1700 1700

60 Hz 1800 1800

50 Hz 14 500 14 500

60 Hz 13 500 13 500

Range 100 to 1200 1400 to 1600 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE

V

TYPE NUMBER

VS-85HF(R)
VS-86HF(R)
VS-87HF(R)
VS-88HF(R)

VOLTAGE

CODE

10 100 200

20 200 300

40 400 500

60 600 700

80 800 900

100 1000 1100

120 1200 1300

140 1400 1500

160 1600 1700

RRM

PEAK REVERSE VOLTAGE

V

85HF(R)

10 to 120 140 to 160

85 85 A

140 110 °C

133 133 A

-65 to +180 -65 to +150 °C

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

UNITS

I

MAXIMUM

RRM

AT T

= TJ MAXIMUM

J

A2s

mA

4.5

A

9

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VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current 
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A2s

Value of threshold voltage
(up to 1200 V)

Value of threshold voltage
(for 1400 V, 1600 V)

Value of forward slope resistance
(up to 1200 V)

Value of forward slope resistance
(for 1400 V, 1600 V)

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

V

F(TO)

r

FM

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 1800

t = 10 ms

t = 8.3 ms 1500

t = 10 ms

t = 8.3 ms 13 500

t = 10 ms

t = 8.3 ms 9400

No voltage 
reapplied

100 % V

RRM

reapplied

No voltage 
reapplied

100 % V

RRM

reapplied



Sinusoidal half wave,
initial T



TJ = TJ maximum

TJ = TJ maximum

f

Ipk = 267 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.2 1.4 V

Vishay Semiconductors

= TJ maximum

J

85HF(R)

10 to 120 140/160

85 A

140 110 °C

133 A

1700

1450

14 500

10 500

0.68

0.69

1.62

1.75

UNITS

A

2

A

s

V

mW

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating and
storage temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance, 
case to heatsink

Maximum shock

(1)

(1)

Maximum constant acceleration

(1)

, T

T

J

Stg

R

thJC

R

thCS

DC operation 0.35

Mounting surface, smooth, flat and greased 0.25

50 Hz 20

Stud outwards 5000

Not lubricated thread, tighting on nut 3.4 (30)

Maximum allowable mounting torque
+ 0 %, - 10 %

Lubricated thread, tighting on nut 2.3 (20)

Not lubricated thread, tighting on hexagon 4.2 (37)

Lubricated thread, tighting on hexagon 3.2 (28)

Approximate weight Unleaded device

Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB)

Notes

(1)

Available only for 88HF

(2)

Recommended for pass-through holes

(3)

Recommended for holed threaded heatsinks

85HF(R)

10 to 20 140 to 160

-65 to +180 -65 to +150 °C

1500

17 g

0.6 oz.

UNITS

K/W

gMaximum constant vibration

N · m

(lbf · in)

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VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series

Average Forward Current (A)

Maximum Allowable Case

Temperature (°C)

100

110

120

130

140

150

0 10 20 30 40 50 60 70 80 90 100

30°

60°

90°

120°

180°

Conduction Angle

85HF(R) Series (1400 V to 1600 V)
R

thJC

(DC) = 0.35 K/W

Average Forward Current (A)

Maximum Allowable Case

Temperature (°C)

100

110

120

130

140

150

0 20 40 60 80 100 120 140

DC

30°

60°

90°

120°

180°

Conduction Period

85HF(R) Series (1400 V to 1600 V)
R

thJC

(DC) = 0.35 K/W

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Vishay Semiconductors

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.10 0.08

120° 0.11 0.11

T

90° 0.13 0.13

= TJ maximum K/W

J

60° 0.17 0.17

30° 0.26 0.26

Note

• The table above shows the increment of thermal resistance R

180

170

160

150

140

130

0 10 20 30 40 50 60 70 80 90 100

Maximum Allowable Case Temperature (°C)

I

F(AV)

85HF(R) Series 100 V to 1200 V

R

(DC) = 0.35 K/W

thJC

Conduction Angle

30°

60°

90°

120°

180°a

- Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

when devices operate at different conduction angles than DC

thJC

Fig. 3 - Current Ratings Characteristics

180

170

160

150

140

130

0 20 40 60 80 100 120 140

Maximum Allowable Case Temperature (°C)

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85HF(R) Series 100 V to 1200 V

R

(DC) = 0.35 K/W

thJC

Conduction Period

30°

60°

90°

120°

180°

I

- Average Forward Current (A)

F(AV)

Fig. 2 - Current Ratings Characteristics

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DC

Fig. 4 - Current Ratings Characteristics

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VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series

Maximum Average Forward

Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

I

F(AV)

- Average Forward Current (A)

0

10

20

30

40

50

60

70

80

90

RMS Limit

Conduction Angle

180°
120°

90°
60°
30°

85HF(R) Series 100 V to 1200 V

Tj = 180˚C

20 40 60 80 100 120 140 160 180

1 K/W

1.5 K/W

2 K/W

3 K/W

5 K/W

10 K/W

0.7 K/W

RthSA = 0.5 K/W - Delta R

0 10 20 30 40 50 60 70 80 90

Maximum Average Forward

Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

I

F(AV)

- Average Forward Current (A)

20 40 60 80 100 120 140 160 180

10 K/W

5 K/W

3 K/W

2 K/W

1 K/W

0.7 K/W

1.5 K/W

RthSA = 0.5 K/W - Delta R

0

20

40

60

80

100

120

0 20 40 60 80 100 120 140

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction Period

Tj = 180˚C

85HF(R) Series 100 V to 1200 V

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

25 50 75 100 125 150

1.5 K/W

2 K/W

3 K/W

5 K/W

10 K/W

1 K/W

0.7 K/W

R

thSA

= 0.5 K/W - Delta R

0

10

20

30

40

50

60

70

80

90

10 0

0 10 20 30 40 50 60 70 80 90

RMS Limit

Conduction Angle

180°
120°

90°
60°
30°

85HF(R) Series (1400 V, 1600 V)

T

j = 150 ˚C

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Fig. 5 - Forward Power Loss Characteristics

Vishay Semiconductors

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Fig. 6 - Forward Power Loss Characteristics

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Fig. 7 - Forward Power Loss Characteristics

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VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

25 50 75 100 125 150

1.5 K/W

2 K/W

3 K/W

5 K/W

10 K/W

0.7 K/W

1 K/W

R

thSA

= 0.5 K/W - Delta R

0

20

40

60

80

100

120

140

0 20 40 60 80 100 120 140

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction Period

85HF(R) Series
(1400 V, 1600 V)

Tj = 150 ˚C

Number Of Equal Amplitude
Half Cycle Current Pulses (N)

Peak Half Sine Wave Forward Current (A)

400

600

800

1

000

1

200

1

400

1

600

1 10 100

85HF(R) Series

Initial Tj = Tj Max.

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Peak Half Sine Wave Forward Current (A)

Pulse Train Duration (s)

200

400

600

800

1000

1200

1400

1600

1800

0.01 0.1 1

Maximum Non Repetitive Surge Current

Initial Tj = Tj Max.

No Voltage Reapplied

Rated Vrrm Reapplied

Versus Pulse Train Duration.

85HF(R) Series

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Fig. 8 - Forward Power Loss Characteristics

10 000

1000

Vishay Semiconductors

Tj = 25°C

Tj = Tj Max.

Fig. 9 - Maximum Non-Repetitive Surge Current

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Fig. 10 - Maximum Non-Repetitive Surge Current

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100

85HF(R) Series
up to 1200 V

Instantaneous Forward Current (A)

10

0 1 2 3 4 5

Instantaneous Forward Voltage (V)

Fig. 11 - Forward Voltage Drop Characteristics

1000

Tj = Tj Max.

100

Tj = 25 °C

10

85HF (R) Series

Instantaneous Forward Current (A)

1

0 0.5 1 1.5 2 2.5

Instantaneous Forward Voltage (V)

Fig. 12 - Forward Voltage Drop Characteristics

5

(for 1400 V, 1600 V)

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Document Number: 95802

VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series

2 - 85 = standard device

86 = not isolated lead

87 = isolated lead with silicone sleeve

(red = Reverse polarity)

(blue = Normal polarity)

88 = type for rotating application

3 - HF = standard diode

4 - None = stud normal polarity (cathode to stud)

R = stud reverse polarity (anode to stud)

5 - Voltage code x 10 = V

RRM

(see Voltage Ratings table)

6 - None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A

M = stud base DO-5 (DO-203AB) M6 x 1 (not available for 88HF)

M8 = stud base DO-5 (DO-203AB) M8 x 1.25 (not available for 88HF)

Device code

5 61 32 4

85VS- HF R 160 M

1 - Vishay Semiconductors product

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10

0.1

0.01

Transient Thermal Impedance (K/W)

0.001

-

0.0001 0.001 0.01 0.1 1 10

thJC

Z

Fig. 13 - Thermal Impedance Z

ORDERING INFORMATION TABLE

Steady State Value

R

= 0.35 K/W

thJC

1

(DC Operation)

85HF(R)

t - Square Wave Pulse Duration (s)

Series

Characteristics

thJC

Vishay Semiconductors

Dimensions www.vishay.com/doc?95342

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LINKS TO RELATED DOCUMENTS

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DO-5 (DO-203AB) for 85HF(R), 86HF(R) and 88HF(R)Series

DIMENSIONS FOR 85HF(R) SERIES in millimeters (inches)

Ø 15.1 (0.59)

6.1/7

(0.24/0.27)

4 (0.16)

4 (0.16) MIN.

25.4 (1) MAX.

10.8 (0.42)

11.4 (0.45)

Outline Dimensions

Vishay Semiconductors

11.1 ± 0.4

(0.44 ± 0.02)

1.20 (0.04)

1/4" 28UNF-2A

For metric devices: M8 x 1.25

M6 x 1

17.35 (0.68)

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DIMENSIONS FOR 86HF(R) SERIES in millimeters (inches)

12.2 (0.48) MAX.

123 (4.84)

134.4 (5.29)
MAX.

MAX.

Outline Dimensions

Vishay Semiconductors

Ø 7 (0.28) MAX.

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Ø 15 (0.59)

7 (0.27)

3.8 (0.15)

8.3 (0.33) max.

10.8 (0.42)

11.4 (0.45)

25.4 (1) max.

2.15 (0.08)

17.35 (0.68)

5 (0.20) max.

4 (0.16) min.

11.1 ± 0.4
(0.44 ± 0.02)

1/4" 28 UNr - 2A

DIMENSIONS 88HF(R) SERIES in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

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