80RIA Series
23
di/dt Max. non-repetitive rate of rise TJ = 125°C, Vd = rated V
DRM
, I
TM
= 2xdi/dt snubber
of turned-on current 300 A/µs 0.2µF, 15Ω, Gate pulse: 20V, 65Ω, t
p
= 6µs, tr= 0.5µs
Per JEDEC Standard RS-397, 5.2.2.6.
Gate pulse: 10V, 15Ω source, t
p
= 6µs, tr = 0.1µs,
V
d
= rated V
DRM
, I
TM
= 50Adc, TJ = 25°C.
I
TM
= 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V,
dv/dt
= 20V/µs, Gate bias: 0V 25Ω, tp = 500µs
dv/dt Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
Parameter 80RIA Units Conditions
15 mA TJ = 125°C rated V
DRM/VRRM
applied
P
GM
Maximum peak gate power 12 TJ = TJ max, tp ≤ 5ms
P
G(AV)
Maximum average gate power 3 TJ = TJ max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current 3 A TJ = TJ max, tp ≤ 5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required 270 TJ = - 40°C
to trigger 120 mA T
J
= 25°C
60 T
J
= 125°C
V
GT
Max. DC gate voltage required 3.5 TJ = - 40°C
to trigger 2.5 V T
J
= 25°C
1.5 T
J
= 125°C
I
GD
DC gate current not to trigger 6 mA
Parameter 80RIA Units Conditions
Triggering
W
20
10
V T
J
= TJ max, tp ≤ 5ms
V
GD
DC gate voltage not to trigger 0.25 V
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= TJ max
Max. required gate trigger/ current/ voltage are the lowest value
which will trigger all units 6V anode-to-cathode applied
Parameter 80RIA Units Conditions
Switching
µs
500 V/µs TJ = 125°C exponential to 67% rated V
DRM
t
d
Typical delay time 1
t
q
Typical turn-off time 110