Datasheet 7MBR75GE060 Datasheet (CALLM)

7MBR75GE060

IGBT MODULE

600V / 75A / PIM

Features

· High Speed Switching

· V oltage Drive

· Low Inductance Module Structure

· Converter Diode Bridge Dynamic Brake Circuit

Applications

· Inverter for Motor Drive

· AC and DC Servo Drive Amplifier

· Uninterruptible Power Supply

IGBT Modules

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)

Item Symbol Condition Rating Unit

Collector-Emitter voltage
Gate-Emitter voltage

Collector current

Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current

Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)

Converter Brake Inverter

I²t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
*1 Recommendable value : 1.3 to 1.7 N·m (M4)

VCES
VGES
IC
ICP

-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
IF(AV)
IFSM
VRRM
VRSM
IO
IFSM

Tj
Tstg
Viso

Continuous
1ms

1 device

Continuous
1ms
1 device

10ms

50/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms

AC : 1 minute

600
±20
75
150
75
300
600
±20
50
100
200
600
1
50
800
900
50
350
648
+150

-40 to +125
AC 2500

1.7 *1

V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m

IGBT Module

7MBR75GE060

Electrical characteristics (Tj=25°C unless without specified)

Item Symbol Condition Characteristics Unit
Min. Typ. Max.

Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage

Collector-Emitter voltage

Input capacitance
Switching time

Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time

Reverse current
Reverse recovery time

(FWD)

Forward voltage
Reverse current

Converter Brake Brake (IGBT) Inverter (IGBT)

ICES
IGES
VGE(th)
VCE(sat)

-VCE

Cies
ton
tr
toff
tf
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
trr
VFM
IRRM

VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V chip
IC=75A Terminal

-IC=75A chip
Terminal
VGE=0V , VCE=10V, f=1MHz
VCC=300V
IC=75A
VGE=±15V
RG=33 ohm
IF=75A
VCES=600V , VGE=0V
VCE=0V, VGE=±20V
IC=50A, VGE=15V
VCC=300V
IC=50A
VGE=±15V
RG=51ohm
VR=600V

IF=50A
VR=800V

5.5

6000

1.0

0.2

8.5

2.8

3.1

3.0

3.3

1.2

0.6

1.0

0.35

0.3

1.0

0.1

2.8

0.8

0.6

1.0

0.35
1

0.6

1.55

1.0

mA
µA
V
V
V
V
V
pF
µs
µs
µs
µs
µs
mA
µA
V
µs
µs
µs
µs
mA
µs
V
mA

Thermal Characteristics

Item Symbol Condition Characteristics Unit
Min. Typ. Max.

Inverter IGBT

Thermal resistance ( 1 device ) Rth(j-c)

Contact thermal resistance * Rth(c-f)

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Inverter FRD
Brake IGBT
Brake FRD
Converter Diode
With thermal compound

0.42

1.10

0.63 °C/W

3.57

2.10

0.05

Equivalent Circuit Schematic

IGBT Module

Characteristics (Representative)

Inverter

7MBR75GE060

Collector current vs. Collector-Emitter voltage

175

150

125

100

75

50

Collector current : Ic [A]

25

0 0

0 1 2 3 4 5 6

10

Tj=25°C

Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C

Collector current vs. Collector-Emitter voltage
Tj=125°C

175

150

125

100

75

50

Collector current : Ic [A]

25

0 1 2 3 4 5 6

Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C

10

8

6

4

Collector-Emitter voltage : VCE [V]

2

0

0 5 10 15 20 25

Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current
Vcc=300V, RG=33 ohm, VGE=±15V, Tj=25°C

1000

8

6

4

Collector-Emitter voltage : VCE [V]

2

0

0 5 10 15 20 25

Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current
Vcc=300V, RG=33 ohm, VGE=±15V, Tj=125°C

1000

100

Switching time : ton, tr, toff, tf [n sec.]

10

0 25 50 75 100 125

Collector current : Ic [A]

100

Switching time : ton, tr, toff, tf [n sec.]

10

0 25 50 75 100 125 150

Collector current : Ic [A]

IGBT Module

7MBR75GE060

1000

100

Switching time : ton, tr, toff, tf [n sec.]

10

175

150

Switching time vs. RG
Vcc=300V , Ic=75A, VGE=±15V, Tj=25°C

10

Gate resistance : RG [ohm]

Forward current vs. Forward voltage
VGE=0V

100

Dynamic input characteristics
Tj=25°C

500

400

300

200

Collector-Emitter voltage : VCE [V]

100

0

0 200 400 600 800 1000 1200

Gate charge : Qg [nC]

Reverse recovery characteristics
trr, Irr, vs. IF

25

20

15

10

5

Gate-Emitter voltage : VGE [V]

0

125

100

75

50

Forward current : IF [A]

25

0

0 1 2 3 4

Forward voltage : VF [V]

Transient thermal resistance

1

0.1

100

Reverse recovery current : Irr [A]

Reverse recovery time : trr [n sec.]

10

0 25 50 75 100 125 150

Forward current : IF [A]

Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 33 ohm

700

600

500

400

300

<<

>

Thermal resistance : Rth (j-c) [°C/W]

0.01

0.001 0.01 0.1 1
Pulse width : PW [sec.]

Collector current : Ic [A]

200

100

0

0 100 200 300 400 500 600

Collector-Emitter voltage : VCE [V]

IGBT Module

7MBR75GE060

Switching loss vs. Collector current

10

8

6

4

2

Switching loss : Eon, Eoff, Err [mJ /cycle]

0

0 25 50 75 100 125 150

60

50

Vcc=300V, RG=33 ohm, VGE=±15V

Collector current : Ic [A]

Converter Diode
Forward current vs. Forward voltage

Capacitance vs. Collector-Emitter voltage
Tj=25°C

10

1

Capacitance : Cies, Coes, Cres [nF]

0.1
0 5 10 15 20 25 30 35

Collector-Emitter voltage : VCE [V]

40

30

20

Forward current : IF [A]

10

0

0 0.5 1.0 1.5 2.0

Forward voltage : VF [V]

IGBT Module

Brake

7MBR75GE060

Collector current vs. Collector-Emitter voltage
Tj=25°C

125

100

75

50

Collector current : Ic [A]

25

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C

10

Collector current vs. Collector-Emitter voltage
Tj=125°C

125

100

75

50

Collector current : Ic [A]

25

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C

10

8

6

4

Collector-Emitter voltage : VCE [V]

2

0

0 5 10 15 20 25

Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current
Vcc=300V, RG=51 ohm, VGE=±15V, Tj=25°C

1000

100

8

6

4

Collector-Emitter voltage : VCE [V]

2

0

0 5 10 15 20 25

Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current
Vcc=300V, RG=51 ohm, VGE=±15V, Tj=125°C

1000

100

Switching time : ton, tr, toff, tf [n sec.]

10

0 20 40 60 80

Collector current : Ic [A]

Switching time : ton, tr, toff, tf [n sec.]

10

0 20 40 60 80

Collector current : Ic [A]

IGBT Module

7MBR75GE060

1000

100

Switching time : ton, tr, toff, tf [n sec.]

10

10

Switching time vs. RG
Vcc=300V , Ic=50A, VGE=±15V, Tj=25°C

Gate resistance : RG [ohm]

Transient thermal resistance

100

Dynamic input characteristics
Tj=25°C

500

400

300

200

Collector-Emitter voltage : VCE [V]

100

0

0 50 100 150 200 250 300

Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 51 ohm

500

Gate charge : Qg [nC]

<< >

25

20

15

10

5

Gate-Emitter voltage : VGE [V]

0

1

0.1

Thermal resistance : Rth (j-c) [°C/W]

0.001 0.01 0.1 1
Pulse width PW [sec.]

Capacitance vs. Collector-Emitter voltage
Tj=25°C

10

1

400

300

200

Collector current : Ic [A]

100

0

0 100 200 300 400 500 600

Collector-Emitter voltage : VCE [V]

Capacitance : Cies, Coes, Cres [nF]

0.1

0 5 10 15 20 25 30 35

Collector-Emitter voltage : VCE [V]

IGBT Module

Outline Drawings, mm

7MBR75GE060

For more information, contact:

Collmer Semiconductor, Inc.

P.O. Box 702708
Dallas, TX 75370
972-733-1700
972-381-9991 Fax

http://www.collmer.com