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7MBR30NE060
IGBT MODULE
600V / 30A / PIM
Features
· High Speed Switching
· V oltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
IGBT Modules
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
Converter Brake Inverter
I²t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
IF(AV)
IFSM
VRRM
VRSM
IO
IFSM
Tj
Tstg
Viso
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 minute
600
±20
30
60
30
120
600
±20
30
60
120
600
1
50
800
900
50
350
648
+150
-40 to +125
AC 2500
1.7 *1
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m
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IGBT Module
7MBR30NE060
Electrical characteristics (Tj=25°C unless without specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
(FWD)
Reverse recovery time
Forward voltage
Reverse current
Converter Brake Brake (IGBT) Inverter (IGBT)
ICES
IGES
VGE(th)
VCE(sat)
-VCE
Cies
ton
tr
toff
tf
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
trr
VFM
IRRM
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=30mA
VGE=15V, Ic=30A
-Ic=30A
VGE=0V , VCE=10V, f=1MHz
VCC=300V
IC=30A
VGE=±15V
RG=82 ohm
IF=30A
VCES=600V , VGE=0V
VCE=0V, VGE=±20V
IC=30A, VGE=15V
VCC=300V
IC=30A
VGE=±15V
RG=82ohm
VR=600V
IF=50A
VR=800V
4.5
1.0
20
7.5
2.8
3.0
1980
1.2
0.6
1.0
0.35
0.3
1.0
0.1
2.8
0.8
0.6
1.0
0.35
1.0
0.6
1.55
1.0
mA
µA
V
V
V
pF
µs
µs
µs
µs
µs
mA
µA
V
µs
µs
µs
µs
mA
µs
V
mA
Thermal Characteristics
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Inverter FRD
Brake IGBT
Converter Diode
With thermal compound
1.04
2.22
1.04 °C/W
2.10
0.05
Equivalent Circuit Schematic
* NLU (Over current Limiting circuit)
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IGBT Module
Characteristics (Representative)
7MBR30NE060
Collector current vs. Collector-Emitter voltage
Tj=25°C
70
60
50
40
30
20
Collector current : Ic [A]
10
0 0
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
Collector current vs. Collector-Emitter voltage
Tj=125°C
70
60
50
40
30
Collector current : Ic [A]
20
10
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4
Collector-Emitter voltage : VCE [V]
2
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=300V, RG=82 ohm, VGE=±15V, Tj=25°C
1000
100
8
6
4
Collector-Emitter voltage : VCE [V]
2
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=300V, RG=82 ohm, VGE=±15V, Tj=125°C
1000
100
Switching time : ton, tr, toff, tf [n sec.]
10
0 10 20 30 40 50
Collector current : Ic [A]
Switching time : ton, tr toff, tf [n sec.]
10
0 10 20 30 40 50
Collector current : Ic [A]
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IGBT Module
7MBR30NE060
1000
100
Switching time : ton, tr, toff, tf [n sec.]
10
10
70
Switching time vs. RG
Vcc=300V , Ic=30A, VGE=±15V, Tj=25°C
100
Gate resistance : RG [ohm]
FWD
Forward current vs. Forward voltage
VGE=0V
Dynamic input characteristics
Tj=25°C
500
400
300
200
Collector-Emitter voltage : VCE [V]
100
0
0 50 100 150
Gate charge : Qg [nC]
Reverse recovery characteristics
trr, Irr, vs. IF
25
20
15
10
5
Gate-Emitter voltage : VGE [V]
0
60
50
40
30
20
Forward current : IF [A]
10
0
0 1 2 3 4 5
Forward voltage : VF [V]
Transient thermal resistance
1
100
10
Reverse recovery current : Irr [A]
Reverse recovery time : trr [n sec.]
1
0 10 20 30 40 50
Forward current : IF [A]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 82 ohm
300
250
200
150
<<
>
0.1
Thermal resistance : Rth (j-c) [°C/W]
0.001 0.01 0.1 1
Pulse width : PW [sec.]
100
Collector current : Ic [A]
50
0
0 100 200 300 400 500 600
Collector-Emitter voltage : VCE [V]
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IGBT Module
7MBR30NE060
Switching loss vs. Collector current
Vcc=300V, RG=82 ohm, VGE=±15V
3
2
1
Switching loss : Eon, Eoff, Err [mJ /cycle]
0
0 10 20 30 40 50
Collector current : Ic [A]
Converter Diode
Forward current vs. Forward voltage
60
50
Capacitance vs. Collector-Emitter voltage
10
1
0.1
Capacitance : Cies, Coes, Cres [nF]
0 5 10 15 20 25 30 35
Tj=25°C
Collector-Emitter voltage : VCE [V]
40
30
20
Forward current : IF [A]
10
0
0 0.5 1.0 1.5 2.0
Forward voltage : VF [V]
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IGBT Module
Outline Drawings, mm
7MBR30NE060
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For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-733-1700
972-381-9991 Fax
http://www.collmer.com
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