The 74VHCT273A is an advanced high-speed
CMOS OCTA L D-TY PE FL IP FL OP WIT H CLEA R
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
Information signals applied to D inputs are
transferred to the Q o utputs on the positive going
TSSOPSOP
Table 1: Order Codes
PACKAGET & R
SOP74VHCT273AMTR
TSSOP74VHCT273ATTR
edge of the clock pulse.
When the CLE AR
input is held low, the Q outputs
are held low independently of the other inputs.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used t o interf ace 5V to 3V s ince al l
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against static disc harge, giving
them 2KV ESD immunity and transient excess
voltage.
This logi c di agram has not be used to est i m ate propaga tion delays
2/13
Page 3
74VHCT273A
Table 5: Absolute Maximum Ratings
SymbolParameterValueUnit
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) V
CC
2) High or Low State
Table 6: Recommended Operating Conditions
SymbolParameterValueUnit
V
V
V
V
T
dt/dv
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (see note 1)
O
DC Output Voltage (see note 2)-0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
= 0V
Supply Voltage
CC
Input Voltage
I
Output Voltage (see note 1)
O
Output Voltage (see note 2)0 to V
O
Operating Temperature
op
Input Rise and Fall Time (see note 3) (V
= 5.0 ± 0.5V)
CC
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
- 20mA
± 20mA
± 25mA
± 50mA
-65 to +150°C
300°C
4.5 to 5.5V
0 to 5.5V
0 to 5.5V
CC
-55 to 125°C
0 to 20ns/V
V
V
1) V
= 0V
CC
2) High or Low State
3) V
from 0.8V to 2V
IN
3/13
Page 4
74VHCT273A
Table 7: DC Specifications
SymbolParameter
V
V
V
+I
I
High Level Input
IH
Voltage
Low Level Input
V
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
I
Quiescent Supply
CC
Current
Additional Worst
CC
Case Supply
Current
Output Leakage
OPD
Current
Test ConditionValue
= 25°C
T
V
CC
(V)
4.5 to
5.5
A
Min.Typ. Max.Min.Max. Min. Max.
222V
4.5 to
5.5
4.5
4.5
4.5
4.5
0 to
VI = 5.5V or GND
5.5
V
5.5
I
O
=-8 mA
I
O
=50 µA
I
O
=8 mA
I
O
= VCC or GND
I
4.44.54.44.4
3.943.83.7
0.00.10.10.1
=-50 µA
One Input at 3.4V,
other input at V
5.5
CC
or GND
= 5.5V
0
V
OUT
-40 to 85°C -55 to 125°C
Unit
0.80.80.8V
V
0.360.440.55
V
± 0.1± 1.0± 1.0µA
44040µA
1.351.51.5mA
0.5 5.0 5.0µA
Table 8: AC Electrical Characteristics (Input t
Test ConditionValue
SymbolParameter
t
Propagation Delay
PLH
t
t
Time CLOCK to Q
PHL
Propagation Delay
PHL
Time CLEAR
t
CLR Pulse Width
W
LOW
t
CK Pulse Width
W
HIGH or LOW
Setup Time D to
t
s
CLOCK, HIGH or
to Q
LOW
t
Hold Time D to CK,
h
HIGH or LOW
t
REM
f
t
OSLH
t
OSHL
Removal Time CLR
to CLOCK
Maximum Clock
MAX
Frequency
Output to Output
Skew time (note 1)
V
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
C
CC
(V)
L
(pF)
(**)
155.88.21.010.01.010.0
(**)
506.89.21.011.01.011.0
(**)
157.510.01.011.61.011.6
(**)
508.511.01.012.61.012.6
(**)
(**)
(**)
(**)
(**)
(**)
15751706565
(**)
50501604545
(**)
501.01.01.0ns
= tf = 3ns)
r
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
5.05.05.0ns
5.05.05.0ns
2.02.02.0ns
2.02.02.0ns
1.01.01.0ns
Unit
ns
ns
MHz
(*) Voltage range is 5.0V ± 0.5V
Note 1: Parameter guaranteed by design. t
4/13
soLH
= |t
pLHm
- t
pLHn
|, t
soHL
= |t
pHLm
- t
pHLn
|
Page 5
Table 9: Capacitive Characteristics
Test ConditionValue
SymbolParameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
(note 1)
74VHCT273A
= 25°C
T
A
Min.Typ. Max.Min.Max. Min. Max.
6101010pF
16pF
-40 to 85°C -55 to 125°C
Unit
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circ ui t). Averag e operating current can be obtained by t he following equation. I
Flip-Flop)
= CPD x VCC x fIN + ICC/8 (per
CC(opr)
Table 10: Dynamic Switching Characteristics
Test ConditionValue
SymbolParameter
V
V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
V
CC
(V)
5.0
T
A
Min.Typ. Max.Min.Max. Min. Max.
0.60.9
-0.9-0.6
-40 to 85°C -55 to 125°C
Unit
= 25°C
Dynamic High
V
IHD
Voltage Input
5.02.0
= 50 pF
C
L
V
(note 1, 3)
Dynamic Low
V
ILD
Voltage Input
5.00.8
(note 1, 3)
1) Worst case package.
2) Max number of outp ut s defined as (n). Data inpu t s are driven 0V to 3.0V, (n-1) outputs switc hi ng and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (V
(V
), f=1MHz.
IHD
), 0V to thresho l d
ILD
Figure 3: Test Cir cuit
CL =15/50pF or equivalent (i ncludes jig an d probe capac i tance)
= Z
R
of pulse generator (typically 50Ω)
T
OUT
5/13
Page 6
74VHCT273A
Figure 4: Waveform - Propagation Delays, Setup And Hold Times (f=1MHz; 50% duty cycle)
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