Datasheet 74V2T66STR, 74V2T66CTR Datasheet (SGS Thomson Microelectronics)

Page 1
1/9June 2003
HIGH SPEED:
t
PD
= 0.6ns (TYP.) at VCC=5V
LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) at TA= 25°C
LOW "ON" RESISTANCE:
R
ON
=10(TYP.) AT VCC=5VI
I/O
=1mA
SINE WAV E DIS TORTION:
0.04% AT V
CC
=5.0V,f=1KHz
OPERATING VOLTAGERANGE:
V
CC
(OPR) = 4.5V TO 5.5V
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T66 is an advanced high-speed CMOS DUAL BILATERAL SWITCH fabricated in silicon gate C
2
MOS technology. It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This b ilateral switch handles rail to rail analog and digital signals that may vary across the full power supply range (from GND to V
CC
) The C input is provided to control the switch and it’s compatible with standard CMOS output; the
switch is ON (port I/O is connected to Port O/ I) when the C input is held high and OFF (high impedance state exists between the t w o ports) when C is held low. It can be used in many application as Battery P owered System, T est Equipment. It’s available in the comm erc ial and extended temperature range in SOT23-8L package. All inputs and output are equipped with protection circuits against static discharge, gi v ing them ESD immunity and tra nsient excess voltage.
74V2T66
DUAL BILATERAL SWITCH
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2T66STR
SOT23-8L
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INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
* : High Impedance State
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
RECOMMENDED OPERATING CONDITIONS
1) VINfrom0.8V to 2V on control pin
PIN No SYMBOL NAME AND FUNCTION
1, 5 1I/O, 2I/O Independent Input/Output 2, 6 1O/I, 2O/I Independent Output/Input
7, 3 1C, 2C
Enable Input (Active
HIGH) 4 GND Ground (0V) 8
V
CC
Positive Supply Voltage
CONTROL SWITCH FUNCTION
HON
L OFF *
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage -0.5 to VCC+ 0.5
V
V
IC
DC Control Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
± 20 mA
I
IK
DC Control Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 50 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage 0 to V
CC
V
V
IC
Control Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) V
CC
= 5.0V
0 to 20 ns/V
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DC SPECIFICATIONS
(*) Voltage range is5V± 0.5V
AC ELECTRICAL CHARACTERISTICS (CL= 50pF, Input tr=tf= 3ns)
(*) Voltage range is5.0V ± 0.5V
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
5.0
(*)
222V
V
IL
Low Level Input Voltage
5.0
(*)
0.8 0.8 0.8 V
R
ON
ON Resistance
5.0
(*)
VIC=V
IH
V
I/O=VCC
to GND
I
I/O
1mA
12 17 20 24 V
R
ON
ON Resistance
5.0
(*)
VIC=V
IH
V
I/O=VCC
or GND
I
I/O
1mA
10 14 18 20 V
I
OFF
Input/Output Leakage Current (SWITCH OFF)
5.5 VOS=VCCto GND V
IS=VCC
to GND
V
IC=VIL
±0.1 ± 1 ± 1 µA
I
IZ
Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN)
5.5
V
OS=VCC
to GND
V
IC=VIH
±0.1 ± 1 ± 5 µA
I
IN
Control Input Leakage Current
0to
5.5
V
IC
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply Current
5.5
V
I=VCC
or GND
11020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PD
Delay Time
5.0
(*)
0.6 0.7 1.0 2.0 ns
t
PLZ
t
PHZ
Output Disable Time
5.0
(*)
RL= 500
6.0 7.5 9.0 10.0 ns
t
PZL
t
PZH
Output Enable Time
5.0
(*)
RL=1K
2.5 4.0 5.0 7.0 ns
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CAPACITIVE CHARACTERISTICS
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
/2(per switch)
ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA= 25°C)
(*) Voltage range is 5.0V ± 0.5V
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
410 10 10pF
C
I/O
Output Capacitance
10 pF
C
PD
Power Dissipation Capacitance (note 1)
3pF
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
V
IN
(V
p-p
)
Typ.
Sine Wave Distortion (THD)
5.0(*) 4
f
IN
=1KHzRL=10KΩ,CL=50pF
0.04 %
f
MAX
Frequency Response (Switch ON)
5.0(*) Adjust fINvoltage to obtain 0 dBm at VOS. Increase f
IN
Frequency until dB meter reads -3dB
R
L
=50Ω,CL=10pF
180 MHz
Feedthrough Attenuation (Switch OFF)
5.0(*) V
IN
is centered at VCC/2
Adjust f
IN
Voltage to obtained 0dBm at V
IS
RL= 600,CL=50pF,fIN= 1MHz sine wave
-60 dB
Crosstalk (Control Input to Signal Output)
5.0(*) R
L
= 600,CL=50pF,fIN= 1MHz square wave
tr=tf= 2.0ns
60 mV
CrosstalkBetween Switches
5.0(*) R
L
= 600,CL=50pF,fIN= 1MHz sine wave -60 dB
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SWITCHINGCARACTERISTICSTESTCIRCUIT
FEEDTHROUGH ATTENUATION
CROSSTALK (control to output
BANDWIDTH ATTENUATION
MAXIMUM CONTROL FREQUENCY
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CHANNEL RESISTANCE (R
ON)
ICC(Opr.)
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DIM.
mm. mils
MIN. TYP MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.22 0.38 8.6 14.9
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
e0.65 25.6
e1 1.95 76.7
L 0.35 0.55 13.7 21.6
SOT23-8L MECHANICAL DATA
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DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 180 7.086 C 12.8 13.0 13.2 0.504 0.512 0.519 D 20.2 0.795 N 60 2.362
T 14.4 0.567 Ao 3.13 3.23 3.33 0.123 0.127 0.131 Bo 3.07 3.17 3.27 0.120 0.124 0.128 Ko 1.27 1.37 1.47 0.050 0.054 0.0.58 Po 3.9 4.0 4.1 0.153 0.157 0.161
P 3.9 4.0 4.1 0.153 0.157 0.161
Tape & Reel SOT23-xL MECHANICAL DATA
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