The 74V2T32 is an advanced high-speed CMOS
DUAL2-INPUTORGATEfabricatedwith
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provide high noise
immunity and stable output.
SOT23-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2T32STR
Power down protection is provided on all inputs
and outpu ts and 0 t o 7V can be accepted on
inputs with no regard to the supply voltage.
This device can be used to interface 5V to 3V
systems and it is ideal for port able applications
likepersonaldigitalassistantandall
battery-powered equipment.
All inputsandoutputsare equipped with
protection circuits against static discharge, givi ng
them ESD immunity and transient e xcess voltage.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is
not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage-0.5 to VCC+0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7.0V
-0.5 to +7.0V
-20mA
± 20mA
± 25mA
± 50mA
-65 to +150°C
300°C
V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dv
1) VINfrom 0.8V to 2V
2/7
Supply Voltage
CC
Input Voltage
I
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
=5.0± 0.5V)
CC
4.5 to 5.5V
0to5.5V
CC
-55 to 125°C
0 to 20ns/V
V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
V
+I
I
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
I
Quiescent Supply
CC
Current
Additional Worst
CC
Case Supply
Current
Output Leakage
OPD
Current
Test ConditionValue
T
= 25°C
V
CC
(V)
4.5to
A
Min.Typ. Max.Min.Max. Min. Max.
222V
5.5
4.5to
5.5
4.5
4.5
4.5
4.5
0to
5.5
5.5
IO=-50 µA4.44.54.44.4V
=-8 mA3.943.83.7
I
O
IO=50 µA0.00.10.10.1V
I
=8 mA0.360.440.55
O
VI=5.5VorGND
V
I=VCC
or GND
One Input at 3.4V,
other input at V
5.5
CC
or GND
=5.5V
0
V
OUT
74V2T32
-40 to 85°C -55 to 125°C
0.80.80.8V
± 0.1± 1.0± 1.0µA
11020µA
1.351.51.5mA
0.55.05.0µA
Unit
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
Test ConditionValue
SymbolParameter
t
t
(*) Voltage range is 5.0V± 0.5V
Propagation Delay
PLH
Time
PHL
T
V
CC
(V)
C
(pF)
L
A
Min.Typ. Max.Min.Max. Min. Max.
5.0 (*)154.67.01.08.01.09.0
5.0 (*)505.17.51.08.51.09.5
-40 to 85°C -55 to 125°C
Unit
ns
= 25°C
CAPACITANCE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
T
A
Min.Typ. Max.Min.Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
4101010pF
12pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
-40 to 85°C -55 to 125°C
/2
Unit
3/7
Page 4
74V2T32
DYNAMIC SWITCHING CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
V
OLP
V
OLV
1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is
measured in the LOW state.
Dynamic Low Level Quiet Output (note 1)
(V)
V
CC
=50pF
C
5.0
L
V
=0V,VIH=3.3V
IL
TEST CIRCUIT
=25°C
A
Min.Max.
0.8
-0.8
Unit
V
CL= 15/50pF or equivalent (includes jig and probe capacitance)
R
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