Datasheet 74V2T126STR, 74V2T126CTR Datasheet (SGS Thomson Microelectronics)

1/8June 2003

■ HIGH SPEED: t

PD

= 3.8ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ COMPATIBLE WITHTTL OUTPUTS:

V

IH

=2V(MIN),VIL=0.8V(MAX)

■ POWER DOWN PROT ECTION ON INPUTS

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL=8mA(MIN)

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANG E:

V

CC

(OPR) = 4.5V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T126 is an advanced high-speed CMOS
DUAL BUS BUFFER fabricated with sub-micron
silicon gate and double-layer me tal wiring C

2

MOS

technology.
3-STATE control input nG has to be set LOW to

place the out put into the high impedance state.

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 3V to 5V systems
and it is ideal for portable ap plicat ions like
personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.

74V2T126

DUAL BUS BUFFER (3-STATE)

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T126STR

SOT23-8L

74V2T126

2/8

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

X: "H" or "L"
Z: HighImpedance

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

RECOMMENDED OPERATING CONDITIONS

1) VINfrom0.8V to 2V

PIN No SYMBOL NAME AND FUNCTION

1, 7 1G, 2G Output Enable Inputs
2, 5 1A, 2A Data Inputs
3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V)
8

V

CC

Positive Supply Voltage

nA nG nY

XLZ

LHL

HHH

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

− 20 mA

I

OK

DC Output Diode Current

− 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

4.5 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) (V

CC

=5.0±0.5V)

0 to 20 ns/V

74V2T126

3/8

DC SPECIFICATION

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is5.0V ± 0.5V

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

4.5to

5.5

2.0 2.0 2.0

V

V

IL

Low Level Input
Voltage

4.5to

5.5

0.8 0.8 0.8

V

V

OH

High Level Output
Voltage

4.5

IO=-50 µA

4.4 4.5 4.4 4.4
V

4.5

I

O

=-8 mA

3.94 3.8 3.7

V

OL

Low Level Output
Voltage

4.5

IO=50 µA

0.0 0.1 0.1 0.1
V

4.5

I

O

=8 mA

0.36 0.44 0.55

I

OZ

High Impedance
Output Leakage
Current

5.5

V

I=VIH

or V

IL

VO= 5.5 or GND

±0.25 ± 2.5 ± 5 µA

I

I

Input Leakage
Current

0to

5.5

V

I

= 5.5V or GND

± 0.1 ± 1 ± 1 µA

I

OPD

Power downOutput
Leakage Current

0

V

O

= 5.5

0.5 5 10 µA

I

CC

Quiescent Supply
Current

5.5

V

I=VCC

or GND

11020µA

+

I

CC

Additional Worst
Case Supply
Current

5.5

One Input at 3.4V,
other input at V

CC

or GND

1.35 1.5 1.5 mA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLH

t

PHL

Propagation Delay
Time

5.0

(*)

15 3.8 5.5 1.0 6.5 1.0 7.5

ns

5.0

(*)

50 4.3 6.5 1.0 7.5 1.0 8.5

t

PLZ

t

PHZ

Output Disable
Time

5.0

(*)

15

R

L

=1KΩ

3.6 5.0 1.0 6.0 1.0 7.0

5.0

(*)

50

R

L

=1KΩ

5.1 7.0 1.0 8.0 1.0 9.0

t

PZL

t

PZH

Output Enable
Time

5.0

(*)

15

R

L

=1KΩ

3.7 5.9 1.0 7.0 1.0 8.0

5.0

(*)

50

R

L

=1KΩ

4.1 6.5 1.0 7.5 1.0 8.5

74V2T126

4/8

CAPACITIVE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

/2

TEST CIRCUIT TEST CIRCUIT

CL=15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
R

T=ZOUT

of pulse generator (typically 50Ω)

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

410 10 10pF

C

OUT

Output
Capacitance

6pF

C

PD

Power Dissipation
Capacitance
(note 1)

14 pF

TEST SWITCH

t

PLH,tPHL

Open

t

PZL,tPLZ

V

CC

t

PZH,tPHZ

GND

74V2T126

5/8

WAVEFORM 1 : PROPAGATION DELAYS (f=1MHz; 50% duty cycle)

WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)

74V2T126

6/8

DIM.

mm. mils

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.15 0.0 5.9

A2 0.90 1.30 35.4 51.2

b 0.22 0.38 8.6 14.9

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 2.60 3.00 102.3 118.1

E1 1.50 1.75 59.0 68.8

e0.65 25.6

e1 1.95 76.7

L 0.35 0.55 13.7 21.6

SOT23-8L MECHANICAL DATA

74V2T126

7/8

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

Tape & Reel SOT23-xL MECHANICAL DATA

74V2T126

8/8

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