The 74V2T125 is an advanced high-speed CMOS
DUAL BUS BUFFER fabricated with sub-micron
silicon gate and double-layer me tal wiring C
2
MOS
technology.
3-STATE control input nG
has to be set H IGH to
place the out put into the high impedance state.
SOT23-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2T125STR
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 3V to 5V systems
and it is ideal for portable ap plicat ions like
personal digital assistant, camcorder and all
battery-powered equipment.
All inputsand outputs areequipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0V
-0.5 to +7.0V
V
− 20mA
− 20mA
± 25mA
± 50mA
-65 to +150°C
260°C
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dv
1) VINfrom0.8V to 2V
Supply Voltage
CC
Input Voltage
I
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
=5.0±0.5V)
CC
4.5 to 5.5V
0 to 5.5V
CC
-55 to 125°C
0 to 20ns/V
2/8
V
Page 3
DC SPECIFICATION
SymbolParameter
V
V
V
I
+
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
High Impedance
I
OZ
Output Leakage
Current
Input Leakage
I
I
Current
Power downOutput
OPD
Leakage Current
Quiescent Supply
I
CC
Current
I
Additional Worst
CC
Case Supply
Current
Test ConditionValue
= 25°C
T
V
CC
(V)
4.5to
5.5
A
Min.Typ. Max. Min. Max.Min. Max.
0.80.80.8V
4.5to
5.5
4.5
4.5
4.5
4.5
5.5
0to
5.5
0
5.5
IO=-50 µA
=-8 mA
I
O
IO=50 µA
=8 mA
I
O
I=VIH
or V
IL
V
VO= 5.5 or GND
V
= 5.5V or GND
I
= 5.5
V
O
V
I=VCC
or GND
4.44.54.44.4
3.943.83.7
0.00.10.10.1
One Input at 3.4V,
other input at V
5.5
CC
or GND
74V2T125
-40 to 85°C -55 to 125°C
2.02.02.0
0.360.440.55
±0.25± 2.5± 5µA
± 0.1± 1± 1µA
0.5510µA
11020µA
1.351.51.5mA
Unit
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
Test ConditionValue
SymbolParameter
t
t
t
t
t
t
(*) Voltage range is5.0V ± 0.5V
Propagation Delay
PLH
Time
PHL
Output Disable
PLZ
Time
PHZ
Output Enable
PZL
Time
PZH
V
(V)
5.0
5.0
5.0
5.0
5.0
5.0
C
CC
L
(pF)
(*)
153.85.51.06.51.07.5
(*)
504.36.51.07.51.08.5
(*)
(*)
(*)
(*)
15
50
15
50
R
L
R
L
R
L
R
L
=1KΩ
=1KΩ
=1KΩ
=1KΩ
=3ns)
r=tf
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max. Min. Max.Min. Max.
3.65.01.06.01.07.0
5.17.01.08.01.09.0
3.75.91.07.01.08.0
4.16.51.07.51.08.5
Unit
ns
3/8
Page 4
74V2T125
CAPACITIVE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
T
A
Min.Typ. Max. Min. Max.Min. Max.
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
4101010pF
6pF
14pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
TEST CIRCUIT TEST CIRCUIT
-40 to 85°C -55 to 125°C
/2
Unit
TESTSWITCH
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL=15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
R
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