Datasheet 74V2G70STR, 74V2G70CTR Datasheet (SGS Thomson Microelectronics)

74V2G70

TRIPLE BUFFER

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ POWER DOWN PROTECTION ON INPUTS

= 28% VCC(MIN.)

= 3.0ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

II

|=IOL=4mA(MIN)atVCC=3.0V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G70 is an advanced high-speed CMOS
TRIPLE NOT INVERTED BUFFERfabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.
The internal circuit is composed of 3 st ages
including buffer output, w hich provide high noise
immunity and stable output.

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G70STR

Power down protection is provided on all inputs
and outpu ts and 0 t o 7V can be accepted on
inputs with no regard to th e s upply voltage.
This device can be used to interface 5V to 3V
systems and it is ideal for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits aga inst st atic discharge, giving
them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8June 2003

74V2G70

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME QND FUNCTION

1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs

4 GND Ground (0V)
8

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V
V
V

I

IK

I

OK

I

or I

I

CC

T

stg

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

=0V

1) V

CC

2) Highor Low State

Supply Voltage
DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

O

DC Input Diode Current
DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature
Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

nA nY

LL

HH

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V
V

− 20 mA

− 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

CC

V
V
V
T

dt/dv

1) VCC=0V

2) Highor Low State
from30% to 70% ofV

3) V

IN

2/8

Supply Voltage
Input Voltage

I

Output Voltage (see note 1)

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

(V

CC

CC

=3.3±0.3V)

= 5.0 ± 0.5V)

Input Rise and Fall Time (note 3) (V

CC

2 to 5.5 V
0 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100

0to20

V

ns/V
ns/V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

Input Leakage

I

I

Current

I

Quiescent Supply

CC

Current
Power downOutput

OPD

Leakage Current

Test Condition Value

V

(V)

CC

T

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

= 25°C

2.0 1.5 1.5 1.5

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0to

5.5

5.5

0

IO=-50 µA

=-50 µA

I

O

=-50 µA

I

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

= 5.5V or GND

V

I

V

I=VCC

V

O

or GND

= 5.5

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.3V

CC

0.3V

CC

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.36 0.44 0.55

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

11020µA

0.5 5 10 µA

74V2G70

Unit

0.3V

CC

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

Test Condition Value

Symbol Parameter

t

PLHtPHL

(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Propagation Delay
Time

3.3

3.3

5.0

5.0

C

V

CC

(V)

L

(pF)

(*)

15 3.7 7.0 1.0 8.0 1.0 9.0

(*)

50 5.3 8.0 1.0 9.5 1.0 10.5

(**)

15 3.0 5.0 1.0 6.0 1.0 7.0

(**)

50 4.1 6.5 1.0 7.5 1.0 8.5

=3ns)

r=tf

= 25°C

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

3/8

74V2G70

CAPACITANCE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

410 10 10pF

12 pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

DYNAMIC SWITCHING CHARACTERISTICS

Test Condition Value

Symbol Parameter

V

OLP

V

OLV

1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is
measured in the LOW state.

Dynamic Low Level Quiet Out­put (note 1)

(V)

V

CC

=50pF

C

5.0

L

V

=0V,VIH= 3.3V

IL

-40 to 85°C -55 to 125°C

/2

T

=25°C

A

Min. Max.

0.8

-0.8

Unit

Unit

V

4/8

TEST CIRCUIT

74V2G70

CL= 15/50pF or equivalent (includes jig and probe capacitance)
R

T=ZOUT

of pulse generator (typically 50Ω)

WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)

5/8

74V2G70

SOT23-8L MECHANICAL DATA

mm. mils

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.15 0.0 5.9

A2 0.90 1.30 35.4 51.2

b 0.22 0.38 8.6 14.9

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 2.60 3.00 102.3 118.1

E1 1.50 1.75 59.0 68.8

e0.65 25.6

e1 1.95 76.7

L 0.35 0.55 13.7 21.6

6/8

Tape & Reel SOT23-xL MECHANICAL DATA

74V2G70

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

mm. inch

7/8

74V2G70

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