The 74LX1G02 is a low voltage C MOS SINGLE
2-INPUT NOR GATE fabricated with sub-micron
silicon gate and double - layer metal wiring C
2
MOS
technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high no ise
immunity and stable output.
PIN CONNECTION AND IEC LOGIC SYMBOLS
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inp uts with no
regard to the supply voltage. This device can be
usedto interface5V to 3V.
All inputsand outputs areequipped with
protection circuits against static discharge.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) I
absolute maximum rating must be observed
O
2) V
<GND,VO>V
O
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC= 0V)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC VCCor Ground Current per Supply Pin
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
CC
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
V
-50mA
-50mA
± 50mA
± 50mA
-65 to +150°C
300°C
2/10
Page 3
74LX1G02
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
T
dt/dvInput Rise and Fall Time (note 2)0 to 10ns/V
1) Truth Table guaranteed: 1.2V to 3.6V
from0.8V to 2V atVCC=3.0V
2) V
IN
DC SPECIFICATIONS
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC= 0V)
O
Output Voltage (High or Low State)0 to V
O
High or Low Level Output Current (VCC= 4.5 to 5.5V)
High or Low Level Output Current (VCC= 3.0 to 3.6V)
High or Low Level Output Current (VCC= 2.7 to 3.0V)
High or Low Level Output Current (VCC= 2.3 to 2.7V)
High or Low Level Output Current (VCC= 1.65 to 2.3V)
Operating Temperqture
op
Test ConditionValue
1.65 to 5.5V
0 to 5.5V
0 to 5.5V
CC
± 32mA
± 24mA
± 12mA
± 8mA
± 4mA
-40 to 85°C
V
SymbolParameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
Power Off Leakage
off
Current
Quiescent Supply
I
CC
Current
V
CC
(V)
1.65 to 1.95
3.0 to 5.5
1.65 to 1.95
3.0 to 5.5
1.65 to 4.5
1.65
2.3
3.0
4.5
1.65 to 4.5
1.65
2.3
3.0
4.5
1.65 to 5.5
0
1.65 to 5.5
-40 to 85 °C-55 to 125 °C
Min.Max.Min.Max.
0.75V
0.7V
0.7V
CC
CC
CC
0.25V
0.3V
0.3V
0.75V
CC
CC
CC
IO=-100 µAVCC-0.1VCC-0.1
=-4 mA
I
O
=-8 mA
I
O
I
=-16 mA
O
=-24 mA
I
O
=-32 mA
I
O
=100 µA
I
O
=4 mA
I
O
=8 mA
I
O
I
=16 mA
O
=24 mA
I
O
=32 mA
I
O
= 0 to 5.5V
V
I
or VO= 5.5V
V
I
V
I=VCC
or GND
1.21.2
1.91.9
2.42.4
2.22.2
3.83.8
0.10.1
0.450.45
0.30.3
0.40.4
0.550.55
0.550.55
± 10± 10µA
1010µA
1010µA
0.7V
0.7V
CC
CC
CC
0.25V
0.3V
0.3V
CC
CC
Unit
V2.3 to 2.7
CC
V2.3 to 2.7
V
V
3/10
Page 4
74LX1G02
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns)
Test ConditionValue
SymbolParameter
t
PLHtPHL
Propagation Delay
Time
V
(V)
CC
C
(pF)
R
L
(Ω)
= t
t
L
s
(ns)
1.65 to 1.95
2.3 to 2.727.027.0
3.0 to 3.614.714.7
151MΩ3.0
-40 to 85 °C-55 to 125 °C
r
Min.Max.Min.Max.
212.0212.0
Unit
4.5 to 5.514.114.1
1.65 to 1.953010002.027.527.5
ns
2.3 to 2.7305002.025.525.5
2.7505002.515.215.2
3.0 to 3.6505002.514.214.2
4.5 to 5.5505002.513.713.7
CAPACITIVE CHARACTERISTICS
Test ConditionValue
=25°C
SymbolParameter
V
CC
(V)
C
C
Input Capacitance
IN
Power Dissipation Capaci-
PD
tance (note 1)
04pF
1.8fIN= 10MHz21
3.326
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he
consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or
systems without express written approval of STMicroelectronics.
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