The 74LVX594 is a low voltage CMOS 8 BIT
SHIFT REGISTER WITH OUTPUT REGISTER
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology. It is
ideal for low power, battery operated and low
noise 3.3V applications.
This device contains an 8-bit serial-in, parallel-out
shift register that feeds an 8-bit D-type storage
register. Separate clocks and direct overriding
clear (SCLR,
RCLR) are provided for both the shift
Figure 1: Pin Connection An d I E C Logic Symbols
TSSOPSOP
Table 1: Order Codes
PACKAGET & R
SOP74LVX594MTR
TSSOP74LVX594TTR
register and the storage register. A serial (QH’)
output is provided for cascading purposes.
Both
the shift register and storage register use
positive-edge triggered clocks. If the clocks are
connected together, the shift register state will
always be one clock pulse ahead of the storage
register.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V system. It combines
high speed performance w ith the true CMOS low
powe r consumption.
All inputs and outputs are equipped with
protection circuits against static disc harge, giving
them 2KV ESD immunity and transient excess
voltage.
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the sa m e di rection, ei ther HIGH or LOW
2) Param eter guaran teed by design
(*) Voltage range is 3.3V ±
0.3V
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Page 7
Table 9: Capacitive Characteristics
Test ConditionValue
SymbolParameter
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
(note 1)
V
CC
(V)
3.37101010pF
3.39pF
3.3
= 10MHz
f
IN
74LVX594
= 25°C
T
A
Min.Typ. Max.Min.Max. Min. Max.
55pF
-40 to 85°C -55 to 125°C
Unit
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circ ui t). Averag e operatin g current can be obtained by t he following equation. I
= CPD x VCC x f
CC(opr)
+ I
IN
CC
Figure 5: Test Circuit
CL =15/50pF or equivalent (i ncludes jig an d probe capac i tance)
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