Datasheet 74LX1G00STR, 74LX1G00CTR Datasheet (SGS Thomson Microelectronics)

Page 1
5V TOLERANT INPUTS
HIGH SPEED:t
LOW POWER DISSIPATION:
=1µA(MAX.)atTA=25°C
CC
POWER DOWN PROTECTION ON INPUTS
= 4. 7ns (MAX.) at VCC=3V
PD
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL= 24mA (MIN) at VCC=3V
OH
BALANCED PROPAGATION DELAYS:
t
t
PLH
PHL
OPERATING VOLTAGE RANGE:
V
(OPR) = 1.65V to 5.5V
CC
(1.2V Data Retention)
IMPROVED LATCH-UP IMMUNITY
74LX1G00
SINGLE 2-INPUT NAND GATE
SOT323-5LSOT23-5L
ORDER CODES
PACKAGE T & R
SOT23-5L 74LX1G00STR
SOT323-5L 74LX1G00CTR
DESCRIPTION
The 74LX1G00 is a low voltage C MOS SINGLE 2-INPUT NAND GATE fabricated with s ub-micron silicon gate and double - layer metal wiring C
2
MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high no ise immunity and stable output.
PIN CONNECTION AND IEC LOGIC SYMBOLS
Power down protection is provided on all inputs and 0 to 7V can be accepted on inp uts with no regard to the supply voltage. This device can be usedto interface5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge.
1/10October 2002
Page 2
74LX1G00
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION TRUTH TABLE
PIN No SYMBOL NAME AND FUNCTION
1 1A Data Input 2 1B Data Input 4 1Y Data Output 3 GND Ground (0V) 5
V
CC
Positive Supply Voltage
ABY
LLH
LHH HLH HHL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter² Value Unit
V
V V V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
1) I
absolute maximum rating must be observed
O
2) V
<GND,VO>V
O
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC= 0V)
O
DC Output Voltage (High or Low State) (note 1) -0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2) DC Output Current
O
DC VCCor Ground Current per Supply Pin
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
CC
-0.5 to +7.0 V
-0.5 to +7.0 V
-0.5 to +7.0 V V
-50 mA
-50 mA
± 50 mA ± 50 mA
-65 to +150 °C
300 °C
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Page 3
74LX1G00
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V V V
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
T
dt/dv Input Rise and Fall Time (note 2) 0 to 10 ns/V
1) Truth Table guaranteed: 1.2V to 3.6V from0.8V to 2V atVCC=3.0V
2) V
IN
DC SPECIFICATION
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC= 0V)
O
Output Voltage (High or Low State) 0 to V
O
High or Low Level Output Current (VCC= 4.5 to 5.5V) High or Low Level Output Current (VCC= 3.0 to 3.6V) High or Low Level Output Current (VCC= 2.7 to 3.0V) High or Low Level Output Current (VCC= 2.3 to 2.7V) High or Low Level Output Current (VCC= 1.65 to 2.3V) Operating Temperqture
op
Test Condition Value
1.65 to 5.5 V 0 to 5.5 V 0 to 5.5 V
CC
± 32 mA ± 24 mA ± 12 mA
± 8mA ± 4mA
-55 to 125 °C
V
Symbol Parameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
Power Off Leakage
off
Current Quiescent Supply
I
CC
Current
V
CC
(V)
1.65 to 1.95
3.0 to 5.5
1.65 to 1.95
3.0 to 5.5
1.65 to 4.5
1.65
2.3
3.0
4.5
1.65 to 4.5
1.65
2.3
3.0
4.5
1.65 to 5.5
0
1.65 to 5.5
-40 to 85 °C -55 to 125 °C
Min. Max. Min. Max.
0.75V
0.7V
0.7V
CC CC CC
0.25V
0.3V
0.3V
0.75V
CC CC CC
IO=-100 µAVCC-0.1 VCC-0.1
=-4 mA
I
O
=-8 mA
I
O
I
=-16 mA
O
=-24 mA
I
O
=-32 mA
I
O
=100 µA
I
O
=4 mA
I
O
=8 mA
I
O
I
=16 mA
O
=24 mA
I
O
=32 mA
I
O
= 0 to 5.5V
V
I
or VO= 5.5V
V
I
V
I=VCC
or GND
1.2 1.2
1.9 1.9
2.4 2.4
2.2 2.2
3.8 3.8
0.1 0.1
0.45 0.45
0.3 0.3
0.4 0.4
0.55 0.55
0.55 0.55 ± 10 ± 10 µA
10 10 µA
10 10 µA
0.7V
0.7V
CC CC
CC
0.25V
0.3V
0.3V
CC CC
Unit
V2.3 to 2.7
CC
V2.3 to 2.7
V
V
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Page 4
74LX1G00
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns)
Test Condition Value
Symbol Parameter
t
PLHtPHL
Propagation Delay Time
V
(V)
CC
C
(pF)
R
L
()
= t
t
L
s
(ns)
1.65 to 1.95
2.3 to 2.7 2 7.0 2 7.0
3.0 to 3.6 1 4.7 1 4.7
15 1M 3.0
-40 to 85 °C -55 to 125 °C
r
Min. Max. Min. Max.
2 12.0 2 12.0
Unit
4.5 to 5.5 1 4.1 1 4.1
1.65 to 1.95 30 1000 2.0 2 13.0 2 13.0
ns
2.3 to 2.7 30 500 2.0 2 7.5 2 7.5
2.7 50 500 2.5 1 5.6 1 5.6
3.0 to 3.6 50 500 2.5 1 5.2 1 5.2
4.5 to 5.5 50 500 2.5 1 4.5 1 4.5
CAPACITIVE CHARACTERISTICS
Test Condition Value
=25°C
Symbol Parameter
V
CC
(V)
C
C
Input Capacitance
IN
Power Dissipation Capacitance
PD
(note 1)
04pF
1.8 fIN= 10MHz 16
3.3 20
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
T
A
Min. Typ. Max.
CC(opr)=CPDxVCCxfIN+ICC
Unit
pF2.5 18
4/10
Page 5
TEST CIRCUIT
74LX1G00
RT=Z
of pulse generator (typically 50)
OUT
TEST CIRCUIT AND WAV E FORM SYMBOL VALUE
Symbol
C
L
R
L
V
IH
V
M
t
r=tr
1.65 to 1.95V 2.3 to 2.7V 2.7 to 5.5V
15pF/30pF 15pF/30pF 15pF/50pF
1MΩ/1000 1MΩ/500 1MΩ/500
V
CC
VCC/2 VCC/2 VCC/2
<2.0ns <2.0ns <2.5ns
V
V
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
CC
CC
V
CC
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Page 6
74LX1G00
SOT23-5L MECHANICAL DATA
mm. mils
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.35 0.50 13.7 19.7
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
e0.95 37.4
e1 1.9 74.8
L 0.35 0.55 13.7 21.6
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Page 7
74LX1G00
SOT323-5L MECHANICAL DATA
mm. mils
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 0.80 1.10 31.5 43.3
A1 0.00 0.10 0.0 3.9
A2 0.80 1.00 31.5 39.4
b 0.15 0.30 5.9 11.8
C 0.10 0.18 3.9 7.1
D 1.80 2.20 70.9 86.6
E 1.80 2.40 70.9 94.5
E1 1.15 1.35 45.3 53.1
e0.65 25.6
e1 1.3 51.2
L 0.10 0.30 3.9 11.8
7/10
Page 8
74LX1G00
Tape & Reel SOT23-xL MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 180 7.086 C 12.8 13.0 13.2 0.504 0.512 0.519 D 20.2 0.795 N 60 2.362
T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131 Bo 3.07 3.17 3.27 0.120 0.124 0.128 Ko 1.27 1.37 1.47 0.050 0.054 0.0.58 Po 3.9 4.0 4.1 0.153 0.157 0.161
P 3.9 4.0 4.1 0.153 0.157 0.161
mm. inch
8/10
Page 9
Tape & Reel SOT323-xL MECHANICAL DATA
74LX1G00
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 175 180 185 6.889 7.086 7.283
C 12.8 13 13.2 0.504 0.512 0.519
D 20.2 0.795
N 59.5 60 60.5 2.362
T 14.4 0.567
Ao 2.25 0.088 Bo 2.7 0.106 Ko 1.2 0.047 Po 3.98 4 4.2 0.156 0.157 0.165
P 3.98 4 4.2 0.156 0.157 0.165
mm. inch
9/10
Page 10
74LX1G00
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or systems without express written approval of STMicroelectronics.
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