The 74LX1G00 is a low voltage CMOS SINGLE
2-INPUT NAND GATE fabricated with sub-micron
silicon gate and double-layer me tal wiring C
2
MOS
technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
PIN CONNECTION AND IEC LOGIC SYMBOLS
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.
All inputsand outputs areequipped with
protection circuits against static discharge.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
absolute maximum rating must be observed
1) I
O
2) V
<GND,VO>V
O
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC=0V)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC+0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC VCCor Ground Current per Supply Pin
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
CC
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
V
-50mA
-50mA
± 50mA
± 50mA
-65 to +150°C
300°C
2/10
Page 3
74LX1G00
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
T
dt/dvInput Rise and Fall Time (note 2)0 to 10ns/V
1) Truth Table guaranteed: 1.2V to 3.6V
2) V
from0.8V to 2V at VCC=3.0V
IN
DC SPECIFICATION
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC=0V)
O
Output Voltage (High or Low State)0 to V
O
High or Low Level Output Current (VCC=4.5to5.5V)
High or Low Level Output Current (VCC=3.0to3.6V)
High or Low Level Output Current (VCC=2.7to3.0V)
High or Low Level Output Current (VCC=2.3to2.7V)
High or Low Level Output Current (VCC=1.65to2.3V)
Operating Temperature
op
Test ConditionValue
1.65 to 5.5V
0to5.5V
0to5.5V
CC
± 32mA
± 24mA
± 12mA
± 8mA
± 4mA
-55 to 125°C
V
SymbolParameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
Power Off Leakage
off
Current
I
Quiescent Supply
CC
Current
V
CC
(V)
1.65 to 1.95
3.0 to 5.5
1.65 to 1.95
3.0 to 5.5
1.65to4.5
1.65
2.3
3.0
4.5
1.65to4.5
1.65
2.3
3.0
4.5
1.65to5.5
0
1.65to5.5
-40 to 85 °C-55 to 125 °C
Min.Max.Min.Max.
0.75V
0.7V
0.7V
CC
CC
CC
0.25V
0.3V
0.3V
0.75V
CC
CC
CC
IO=-100 µAVCC-0.1VCC-0.1
=-4 mA
I
O
=-8 mA
I
O
I
=-16 mA
O
I
=-24 mA
O
=-32 mA
I
O
=100 µA
I
O
=4 mA
I
O
I
=8 mA
O
I
=16 mA
O
=24 mA
I
O
=32 mA
I
O
= 0 to 5.5V
V
I
or VO=5.5V
V
I
V
I=VCC
or GND
1.21.2
1.91.9
2.42.4
2.22.2
3.83.8
0.10.1
0.450.45
0.30.3
0.40.4
0.550.55
0.550.55
± 10± 10µA
1010µA
1010µA
0.7V
0.7V
CC
CC
CC
0.25V
0.3V
0.3V
CC
CC
Unit
V2.3 to 2.7
CC
V2.3 to 2.7
V
V
3/10
Page 4
74LX1G00
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns)
Test ConditionValue
SymbolParameter
t
PLHtPHL
Propagation Delay
Time
C
R
t
V
(V)
CC
(pF)
L
(Ω)
= t
L
s
(ns)
1.65 to 1.95
2.3 to 2.727.027.0
3.0 to 3.614.714.7
151MΩ3.0
-40to85°C-55to125°C
r
Min.Max.Min.Max.
212.0212.0
Unit
4.5 to 5.514.114.1
1.65 to 1.953010002.0213.0213.0
ns
2.3 to 2.7305002.027.527.5
2.7505002.515.615.6
3.0 to 3.6505002.515.215.2
4.5 to 5.5505002.514.514.5
CAPACITIVE CHARACTERISTICS
Test ConditionValue
=25°C
SymbolParameter
V
CC
(V)
C
C
Input Capacitance
IN
Power Dissipation Capacitance
PD
(note 1)
04pF
1.8fIN=10MHz16
3.320
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
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