The 74LVC573A is a lo w voltage CMOS OCTAL
D-TYPE LATCH fabricated with sub-micron silicon
gate and double-layer metal wiring C
technology. It is ideal for 1.65 to 3.6 V
2
MOS
CC
operations and low power and low noise
applications.
These 8 bit D-Type latch are controlled by a latch
enable input (LE) and an output enable input (OE
).
While the LE inputs is held a t a high level, the Q
Figure 1: Pin C onnection And I EC Logic Symbol s
TSSOPSOP
Table 1: Order Codes
PACKAGET & R
SOP74LVC573AMTR
TSSOP74LVC573ATTR
outputs will follow the data input precisely or
inversely. When the LE is taken low, the Q outputs
will be latched precisely or inversely at the logic
lev el of D inp ut d ata. W hile the (OE
) input is low,
the 8 outputs will be in a normal logic state (high or
low logic level) and while high level the outputs will
be in a high impedance state.
This device is designed to inte rface directly High
Speed CMOS systems with TTL and NMOS
components. It has more speed performance at
3.3V than 5V AC/ACT family, combined with a
lowe r power consumption.
All inputs are equipped with protection circuits
against static discharge, giving them 2KV ESD
immunity and transient excess voltage.
Rev. 3
1/13July 2004
Page 2
74LVC573A
Figure 2: Input An d Output Equival e n t Ci rcui t
Table 2: Pin Description Table 3: Truth Table
PIN N°SYMBOLNAME AND FUNCTION
1OE3 State Output Enable
Input (Active LOW)
2, 3, 4, 5, 6,
D0 to D7 Data Inputs
7, 8, 9
12, 13, 14,
Q0 to Q7 3-State Latch Outputs
15, 16, 17,
18, 19
OE
HXXZ
LLX
LHLL
LHHH
INPUTSOUTPUT
LEDQ
NO
CHANGE
11LELatch Enable Input
10GNDGround (0V)
20V
CC
Positive Supply Voltage
X : Don’t Care
Z : High Impedance
Table 4: Absolute Maximum Ratings
SymbolParameterValueUnit
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
absolute maximum rating must be observed
1) I
O
2) VO < GND
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC = 0V)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC VCC or Ground Current per Supply Pin
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
V
- 50mA
- 50mA
± 50mA
± 100mA
-65 to +150°C
300°C
2/13
Page 3
74LVC573A
Table 5: Recommended Operating Conditions
SymbolParameterValueUnit
V
V
V
V
I
OH
I
OH
I
OH
I
OH
T
dt/dvInput Rise and Fall Time (note 2)0 to 10ns/V
1) Truth T abl e guarante ed: 1.2V to 3.6V
2) VIN from 0.8V to 2V at VCC = 3.0V
Table 6: DC Specifications
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC = 0V)
O
Output Voltage (High or Low State)0 to V
O
, I
High or Low Level Output Current (VCC = 3.0 to 3.6V)
OL
, I
High or Low Level Output Current (VCC = 2.7 to 3.0V)
OL
, I
High or Low Level Output Current (VCC = 2.3 to 2.7V)
OL
, I
High or Low Level Output Current (VCC = 1.65 to 2.3V)
OL
Operating Temperature
op
Test ConditionValue
1.65 to 3.6V
0 to 5.5V
0 to 5.5V
CC
± 24mA
± 12mA
± 8mA
± 4mA
-55 to 125°C
V
SymbolParameter
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current
I
I
I
Power Off Leakage
off
Current
I
High Impedance
OZ
Output Leakage
Current
Quiescent Supply
I
CC
Current
∆I
CCICC
incr. per Input
V
CC
(V)
1.65 to 1.95
-40 to 85 °C-55 to 125 °C
Min.Max.Min.Max.
0.65V
CC
0.65V
CC
2.3 to 2.71.71.7
2.7 to 3.622
1.65 to 1.95
0.35V
CC
0.35V
2.3 to 2.70.70.7
2.7 to 3.60.80.8
1.65 to 3.6
1.65
2.3
2.7
3.0
3.0
1.65 to 3.6
1.65
2.3
2.7
3.0
3.6
0
3.6V
IO=-100 µAVCC-0.2VCC-0.2
=-4 mA
I
O
=-8 mA
I
O
=-12 mA
I
O
=-18 mA
I
O
I
=-24 mA
O
IO=100 µA
=4 mA
I
O
=8 mA
I
O
I
=12 mA
O
=24 mA
I
O
VI = 0 to 5.5V
or VO = 5.5V
V
I
= VIH or V
I
IL
1.21.2
1.71.7
2.22.2
2.42.4
2.22.2
0.20.2
0.450.45
0.70.7
0.40.4
0.550.55
± 5± 5µA
1010µA
± 5± 5µA
VO = 0 to 5.5V
3.6
2.7 to 3.6
VI = VCC or GND
V
or VO = 3.6 to
I
5.5V
VIH = VCC-0.6V
1010
± 10± 10
500500µA
Unit
V
CC
V
V
V
µA
3/13
Page 4
74LVC573A
Table 7: Dynamic Switching Characteristics
Test ConditionValue
= 25 °C
SymbolParameter
V
CC
(V)
V
OLP
V
OLV
1) Number of output de fined as "n". M easured with "n -1" outputs switching fr om HI GH to LOW or LOW to HIGH. The rem ai ning output is
measur ed i n the LOW state.
Dynamic Low Level Quiet
Output (note 1)
3.3
= 50pF
C
L
V
= 0V, VIH = 3.3V
IL
Table 8: AC Electrical Characteristics
Test ConditionValue
T
A
Min.Typ.Max.
0.8
-0.8
Unit
V
SymbolParameter
t
PLH tPHL
t
PLH tPHL
t
PZL tPZH
t
PLZ tPHZ
t
t
t
t
OSLH
t
OSHL
Propagation Delay
Time D to Q
Propagation Delay
Time LE to Q
Output Enable Time 1.65 to 1.953010002.0TBDTBD
Output Disable Time 1.65 to 1.953010002.0TBDTBD
LE Pulse Width
W
HIGH
Setup Time D to LE,
s
(HIGH to LOW)
Hold Time LE (HIGH
h
to LOW) to D
Output To Output
Skew Time (note1,
2)
V
(V)
CC
C
(pF)
R
L
(Ω)
= t
t
L
s
(ns)
-40 to 85 °C-55 to 125 °C
r
Min.Max.Min.Max.
1.65 to 1.953010002.0TBDTBD
2.3 to 2.7305002.0TBDTBD
2.7505002.51.57.81.59.4
3.0 to 3.6505002.516.818.2
1.65 to 1.953010002.0TBDTBD
2.3 to 2.7305002.0TBDTBD
2.7505002.51.57.81.59.4
3.0 to 3.6505002.516.818.2
2.3 to 2.7305002.0TBDTBD
2.7505002.518.7110.4
3.0 to 3.6505002.517.719.2
2.3 to 2.7305002.0TBDTBD
2.7505002.527.629.1
3.0 to 3.6505002.527.028.4
1.65 to 1.953010002.0TBDTBD
2.3 to 2.7305002.0TBDTBD
2.7505002.53.33.3
3.0 to 3.6505002.53.33.3
1.65 to 1.953010002.0TBDTDB
2.3 to 2.7305002.0TBDTBD
2.7505002.522
3.0 to 3.6505002.522
1.65 to 1.953010002.0TBDTBD
2.3 to 2.7305002.0TBDTBD
2.7505002.51.51.5
3.0 to 3.6505002.51.51.5
2.7 to 3.611ns
Unit
ns
ns
ns
ns
ns
ns
ns
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the sa me directio n, either HIGH or LOW (t
2) Param eter guaran teed by design
OSLH
= | t
PLHm
- t
PLHn
|, t
OSHL
= | t
PHLm
- t
PHLn
|
4/13
Page 5
74LVC573A
Table 9: Capacitive Characteristics
Test ConditionValue
= 25 °C
SymbolParameter
V
CC
(V)
C
C
Input Capacitance
IN
Power Dissipation Capacitance
PD
(note 1)
1.8fIN = 10MHz28
3.334
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
Figure 3: Test Circuit
T
A
Min.Typ.Max.
4pF
= CPD x VCC x fIN + ICC/n (per c ircuit )
Unit
pF2.530
RT = Z
of pulse generator (typically 50Ω)
OUT
Table 10: Test Circuit And Waveform Symbol Value
Symbol
C
L
R
L = R1
V
S
V
IH
V
M
V
OH
V
X
V
Y
t
= t
r
r
1.65 to 1.95V2.3 to 2.7V2.7V3.0 to 3.6V
30pF30pF50pF50pF
1000Ω500Ω500Ω500Ω
2 x V
V
CC
CC
2 x V
V
CC
CC
VCC/2VCC/21.5V1.5V
V
CC
V
+ 0.15VV
OL
V
- 0.15VV
OH
V
CC
+ 0.15VV
OL
- 0.15VV
OH
<2.0ns<2.0ns<2.5ns<2.5ns
V
CC
6V7V
2.7V3.0V
3.0V3.5V
+ 0.3VV
OL
- 0.3VV
OH
OL
OH
+ 0.3V
- 0.3V
5/13
Page 6
74LVC573A
Figure 4: Waveform - Propagation Delay, Setup And Hold Times (f=1MHz; 50% duty cycle)
Figure 5: Waveform - Output Enable And Disable Times (f=1MHz; 50% duty cycle)
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