•Optimized for Low Voltage applications: 1.0 to 3.6V
•Accepts TTL input levels between V
•Typical V
T
amb
•Typical V
T
amb
(output ground bounce) 0.8V @ VCC = 3.3V,
OLP
= 25°C
(output VOH undershoot) 2V @ VCC = 3.3V,
OHV
= 25°C
= 2.7V and VCC = 3.6V
CC
•Common 3-State output enable input
•Output capability: bus driver
•I
category: MSI
CC
QUICK REFERENCE DATA
GND = 0V; T
SYMBOL
t
PHL/tPLH
= 25°C; tr =tf 2.5 ns
amb
Propagation delay
CP to Q
PARAMETERCONDITIONSTYPICALUNIT
n
DESCRIPTION
The 74LV374 is a low-voltage Si-gate CMOS device and is pin and
function compatible with 74HC/HCT374.
The 74LV374 is an octal D-type flip–flop featuring separate D-type
inputs for each flip-flop and 3-state outputs for bus oriented
applications. A clock (CP) and an output enable (OE
common to all flip-flops.
The eight flip-flops will store the state of their individual D-inputs that
meet the set-up and hold times requirements on the LOW-to-HIGH
CP transition.
When OE
the outputs. When OE
impedance OFF-state. Operation of the OE
state of the flip-flops.
CL = 15pF
VCC = 3.3V
is LOW, the contents of the eight flip-flops is available at
74L V374
) input are
is HIGH, the outputs go to the high
input does not affect the
14ns
f
max
C
I
C
PD
NOTES:
is used to determine the dynamic power dissipation (PD in µW)
1. C
PD
= CPD V
P
D
= input frequency in MHz; CL = output load capacity in pF;
f
i
f
= output frequency in MHz; VCC = supply voltage in V;
o
V
(C
L
2. The condition is V
Maximum clock frequency77MHz
Input capacitance3.5pF
Power dissipation capacitance per flip-flopNotes 1 and 225pF
2
x fi (CL V
CC
2
fo) = sum of the outputs.
CC
= GND to V
I
CC
2
fo) where:
CC
ORDERING INFORMATION
PACKAGESTEMPERATURE RANGE OUTSIDE NORTH AMERICANORTH AMERICAPKG. DWG. #
20-Pin Plastic DIL–40°C to +125°C74LV374 N74LV374 NSOT146-1
20-Pin Plastic SO–40°C to +125°C74LV374 D74LV374 DSOT163-1
20-Pin Plastic SSOP Type II–40°C to +125°C74LV374 DB74LV374 DBSOT339-1
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0V)
SYMBOL
V
CC
±I
IK
±I
OK
DC supply voltage–0.5 to +7.0V
DC input diode currentVI < –0.5 or VI > VCC + 0.5V20mA
DC output diode currentVO < –0.5 or VO > VCC + 0.5V50mA
PARAMETERCONDITIONSRATINGUNIT
DC output source or sink current
±I
– standard outputs
O
– bus driver outputs
–0.5V < VO < VCC + 0.5V
25
35
mA
DC VCC or GND current for types with
±I
,
±I
P
GND
CC
T
stg
TOT
–standard outputs
–bus driver outputs
Storage temperature range–65 to +150°C
Power dissipation per package
–plastic DIL
–plastic mini-pack (SO)
–plastic shrink mini-pack (SSOP and TSSOP)
for temperature range: –40 to +125°C
above +70°C derate linearly with 12mW/K
above +70°C derate linearly with 8 mW/K
above +60°C derate linearly with 5.5 mW/K
50
70
750
500
400
mA
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOLPARAMETERCONDITIONSMINTYP.MAXUNIT
V
CC
V
V
T
amb
tr, t
NOTES:
1. The LV is guaranteed to function down to V
DC supply voltageSee Note11.03.35.5V
Input voltage0–V
I
Output voltage0–V
O
Operating ambient temperature range in free
air
Input rise and fall times except for
f
Schmitt-trigger inputs
= 1.0V (input levels GND or VCC); DC characteristics are guaranteed from VCC = 1.2V to VCC = 5.5V.
CC
See DC and AC
characteristics per device
VCC = 1.0V to 2.0V
VCC = 2.0V to 2.7V
VCC = 2.7V to 3.6V
VCC = 3.6V to 5.5V
Over recommended operating conditions voltages are referenced to GND (ground = 0V)
SYMBOLP ARAMETERTEST CONDITIONS
MINTYP
VCC = 1.2V0.90.9
HIGH level Input
IH
voltage
LOW level Input
IL
voltage
V
OH
evel outpu
;
HIGH level output
voltage;
OH
STANDARD
outputs
HIGH level output
OH
V
OL
;
outputs
evel outpu
;
LOW level output
voltage;
OL
STANDARD
outputs
LOW level output
OL
I
I
I
OZ
;
outputs
Input leakage
current
3-State output
OFF-state current
Quiescent supply
current; SSI
CC
Quiescent supply
current; flip-flops
Quiescent supply
current; MSI
CC
Quiescent supply
current; LSI
Additional
CC
quiescent supply
current per input
∆I
NOTE:
1. All typical values are measured at T
VCC = 2.0V1.41.4
VCC = 2.7 to 3.6V2.02.0
VCC = 4.5 to 5.5V0.7*V
CC
VCC = 1.2V0.30.3
VCC = 2.0V0.60.6
VCC = 2.7 to 3.6V0.80.8
VCC = 4.5 to 5.50.3*V
VCC = 1.2V; VI = VIH or V
VCC = 2.0V; VI = VIH or V
VCC = 2.7V; VI = VIH or V
p
VCC = 3.0V; VI = VIH or V
VCC = 4.5V;VI = VIH or V
VCC = 3.0V;VI = VIH or V
VCC = 4.5V;VI = VIH or V
VCC = 3.0V;VI = VIH or V
VCC = 4.5V;VI = VIH or V
VCC = 1.2V; VI = VIH or V
VCC = 2.0V; VI = VIH or V
VCC = 2.7V; VI = VIH or V
p
VCC = 3.0V;VI = VIH or V
VCC = 4.5V;VI = VIH or V
VCC = 3.0V;VI = VIH or V
VCC = 4.5V;VI = VIH or V
VCC = 3.0V;VI = VIH or V
VCC = 4.5V;VI = VIH or V
–IO = 100µA1.2
IL;
–IO = 100µA1.82.01.8
IL;
–IO = 100µA2.52.72.5
IL;
–IO = 100µA2.83.02.8
IL;
–IO = 100µA4.34.54.3
IL;
–IO = 6mA2.402.822.20
IL;
–IO = 12mA3.604.203.50
IL;
–IO = 8mA2.402.822.20
IL;
–IO = 16mA3.604.203.50
IL;
IO = 100µA0
IL;
IO = 100µA00.20.2
IL;
IO = 100µA00.20.2
IL;
IO = 100µA00.20.2
IL;
IO = 100µA00.20.2
IL;
IO = 6mA0.250.400.50
IL;
IO = 12mA0.350.550.65
IL;
IO = 8mA0.200.400.50
IL;
IO = 16mA0.350.550.65
IL;
VCC = 5.5V; VI = VCC or GND1.01.0µA
VCC = 5.5V; VI = VIH or V
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICA TIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
print codeDate of release: 05-96
Document order number:9397-750-04448
yyyy mmm dd
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