Page 1
INTEGRATED CIRCUITS
74LV10
Triple 3-input NAND gate
Product specification
Supersedes data of 1997 Feb 12
IC24 Data Handbook
1998 Apr 20
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Philips Semiconductors Product specification
74L V10Triple 3-input NAND gate
FEA TURES
•Optimized for Low Voltage applications: 1.0 to 3.6 V
•Accepts TTL input levels between V
•Typical V
T
amb
•Typical V
T
amb
(output ground bounce) < 0.8 V at V
OLP
= 25°C.
(output VOH undershoot) > 2 V at V
OHV
= 25°C.
= 2.7 V and V
CC
CC
CC
CC
= 3.3 V ,
= 3.3 V,
•Output capability: standard
•I
category: SSI
CC
QUICK REFERENCE DATA
GND = 0 V; T
SYMBOL
t
NOTES:
1. C
is used to determine the dynamic power dissipation (PD in µW)
PD
= CPD × V
P
D
f
= input frequency in MHz; CL = output load capacitance in pF;
i
= output frequency in MHz; VCC = supply voltage in V;
f
o
(C
L
2. The condition is V
= 25°C; tr = tf 2.5 ns
amb
PHL/tPLH
C
I
C
PD
2
CC
2
V
fo) = sum of the outputs.
CC
PARAMETER CONDITIONS TYPICAL UNIT
Propagation delay
nA, nB, nC to nY
Input capacitance 3.5 pF
Power dissipation capacitance per gate See Notes 1 and 2 12 pF
CC
2
fo) where:
CC
× fi (CL V
= GND to V
I
= 3.6 V
DESCRIPTION
The 74LV10 is a low-voltage Si-gate CMOS device and is pin and
function compatible with 74HC/HCT10.
The 74LV10 provides the 3-input NAND function.
CL = 15 pF;
VCC = 3.3 V
9 ns
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA PKG. DWG. #
14-Pin Plastic DIL –40°C to +125°C 74LV10 N 74LV10 N SOT27-1
14-Pin Plastic SO –40°C to +125°C 74LV10 D 74LV10 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +125°C 74LV10 DB 74LV10 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +125°C 74LV10 PW 74LV10PW DH SOT402-1
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
1, 3, 9 1A – 3A Data inputs
2, 4, 10 1B – 3B Data inputs
7 GND Ground (0 V)
12, 6, 8 1Y – 3Y Data outputs
13, 5, 11 1C – 3C Data inputs
14 V
CC
Positive supply voltage
FUNCTION TABLE
INPUTS OUTPUTS
nA nB nC nY
L L L H
L L H H
L H L H
L H H H
H L L H
H L H H
H H L H
H H H L
NOTES:
H = HIGH voltage level
L = LOW voltage level
1998 Apr 20 853–1919 19256
2
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Philips Semiconductors Product specification
74LV10Triple 3-input NAND gate
PIN CONFIGURATION
1
1A
2
1B
3
2A
4
2B
5
2C
6
2Y
7
GND
LOGIC SYMBOL (IEEE/IEC)
1
2
13
3
4
5
9
10
11
&
&
&
SV00416
SV00418
LOGIC SYMBOL
V
14
CC
1C
13
1Y
12
3C
11
3B
10
3A
9
3Y
8
1A131
12
1B2
1C
3
2B4
2C2A5
3A119
3B10
3C
1Y
2Y
3Y
SV00417
6
8
LOGIC DIAGRAM (ONE GATE)
12
A
6
8
B
C
Y
SV00419
RECOMMENDED OPERA TING CONDITIONS
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
T
amb
tr, t
NOTE:
1. The LV is guaranteed to function down to V
DC supply voltage See Note1 1.0 3.3 3.6 V
CC
Input voltage 0 – V
I
Output voltage 0 – V
O
Operating ambient temperature range in free air
Input rise and fall times
f
CC
See DC and AC
characteristics
VCC = 1.0V to 2.0V
VCC = 2.0V to 2.7V
VCC = 2.7V to 3.6V
= 1.0V (input levels GND or VCC); DC characteristics are guaranteed from VCC = 1.2V to VCC = 3.6V.
–40
–40
–
–
–
–
–
–
CC
CC
+85
+125
500
200
100
ns/V
V
V
°C
1998 Apr 20
3
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Philips Semiconductors Product specification
voltage
voltage
V
V
V
V
74LV10Triple 3-input NAND gate
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
GND
I
CC
T
stg
P
TOT
DC supply voltage –0.5 to +4.6 V
DC input diode current VI < –0.5 or VI > VCC + 0.5V 20 mA
DC output diode current VO < –0.5 or VO > VCC + 0.5V 50 mA
DC output source or sink current
– standard outputs
DC VCC or GND current for types with
,
– standard outputs 50
Storage temperature range –65 to +150 °C
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
PARAMETER CONDITIONS RATING UNIT
–0.5V < VO < VCC + 0.5V
25
mA
mA
for temperature range: –40 to +125°C
above +70°C derate linearly with 12 mW/K
above +70°C derate linearly with 8 mW/K
above +60°C derate linearly with 5.5 mW/K
750
500
400
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. V oltages are referenced to GND (ground = 0 V).
LIMITS
SYMBOL P ARAMETER TEST CONDITIONS
VCC = 1.2 V 0.9 0.9
IH
HIGH level Input
V
VCC = 2.0 V 1.4 1.4
VCC = 2.7 to 3.6 V 2.0 2.0
VCC = 1.2 V 0.3 0.3
IL
LOW level Input
V
VCC = 2.0 V 0.6 0.6
VCC = 2.7 to 3.6 V 0.8 0.8
–IO = 100µA 1.2
IL;
–IO = 100µA 1.8 2.0 1.8
IL;
–IO = 100µA 2.5 2.7 2.5
IL;
–IO = 100µA 2.8 3.0 2.8
IL;
HIGH level output
OH
voltage; all outputs
VCC = 1.2 V; VI = VIH or V
VCC = 2.0 V; VI = VIH or V
VCC = 2.7 V; VI = VIH or V
VCC = 3.0 V; VI = VIH or V
HIGH level output
OH
voltage;
STANDARD
VCC = 3.0 V; VI = VIH or V
V
–IO = 6mA 2.40 2.82 2.20 V
IL;
outputs
IO = 100µA 0
IL;
IO = 100µA 0 0.2 0.2
IL;
IO = 100µA 0 0.2 0.2
IL;
IO = 100µA 0 0.2 0.2
IL;
LOW level output
OL
voltage; all outputs
VCC = 1.2 V; VI = VIH or V
VCC = 2.0 V; VI = VIH or V
VCC = 2.7 V; VI = VIH or V
VCC = 3.0 V; VI = VIH or V
LOW level output
OL
voltage;
STANDARD
VCC = 3.0 V; VI = VIH or V
V
IO = 6mA 0.25 0.40 0.50 V
IL;
outputs
Input leakage
I
I
current
CC
Quiescent supply
current; SSI
I
VCC = 3.6 V; VI = VCC or GND 1.0 1.0 µA
VCC = 3.6V; VI = VCC or GND; IO = 0 20.0 40 µA
-40°C to +85°C -40°C to +125°C
MIN TYP
1
MAX MIN MAX
UNIT
V
V
1998 Apr 20
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Philips Semiconductors Product specification
CONDITION
t
gy
Figure 1, 2
ns
74LV10Triple 3-input NAND gate
DC ELECTRICAL CHARACTERISTICS (Continued)
Over recommended operating conditions. V oltages are referenced to GND (ground = 0 V).
LIMITS
SYMBOL P ARAMETER TEST CONDITIONS
Additional
CC
quiescent supply
current per input
VCC = 2.7 V to 3.6 V; VI = VCC – 0.6 V 500 850 µA
∆I
NOTE:
1. All typical values are measured at T
amb
= 25°C.
AC CHARACTERISTICS
GND = 0V; tr = tf ≤ 2.5ns; CL = 50pF; RL = 1KΩ
SYMBOL PARAMETER WAVEFORM
PHL/PLH
NOTES:
1. Unless otherwise stated, all typical values are measured at T
2. Typical values are measured at V
Propagation delay
nA, nB, nC to nY
= 3.3 V.
CC
VCC(V) MIN TYP1MAX MIN MAX
1.2 55
2.0 19 36 44
2.7 14 26 33
3.0 to 3.6 10
= 25°C.
amb
-40°C to +85°C -40°C to +125°C
MIN TYP
1
MAX MIN MAX
LIMITS
–40 to +85 °C –40 to +125 °C
2
21 26
UNIT
UNIT
AC WAVEFORMS
VM = 1.5 V at VCC ≥ 2.7 V;
V
= 0.5 × VCC at VCC < 2.7 V;
M
V
and VOH are the typical output voltage drop that occur with the
OL
output load.
V
nA, nB, nC
INPUT
nY OUTPUT
Figure 1. Input (nA, nB, nC) to output (nY) propagation delays.
I
V
M
GND
V
OH
V
OL
t
PHL
V
M
t
PLH
SV00420
TEST CIRCUIT
V
V
PULSE
GENERATOR
DEFINITIONS
RL = Load resistor
C
= Load capacitance includes jig and probe capacitance
L
RT = Termination resistance should be equal to Z
TEST
t
PLH/tPHL
Figure 2. Load circuitry for switching times.
I
D.U.T.
R
T
Test Circuit for switching times
V
CC
< 2.7V V
2.7–3.6V 2.7V
CC
V
O
50pF
C
L
of pulse generators.
OUT
V
I
CC
RL = 1k
SV00901
1998 Apr 20
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Philips Semiconductors Product specification
74LV10Triple 3-input NAND gate
DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1
1998 Apr 20
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Philips Semiconductors Product specification
74LV10Triple 3-input NAND gate
SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
1998 Apr 20
7
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Philips Semiconductors Product specification
74LV10Triple 3-input NAND gate
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1
1998 Apr 20
8
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Philips Semiconductors Product specification
74LV10Triple 3-input NAND gate
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
1998 Apr 20
9
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Philips Semiconductors Product specification
74LV10Triple 3-input NAND gate
DEFINITIONS
Data Sheet Identification Product Status Definition
Objective Specification
Preliminary Specification
Product Specification
Formative or in Design
Preproduction Product
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICA TIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
print code Date of release: 05-96
Document order number: 9397-750-04407
1998 Apr 20
10
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