Datasheet 74HCT7030N, 74HCT7030D, 74HC7030U, 74HC7030N, 74HC7030D Datasheet (Philips)

Page 1
DATA SH EET
Product specification File under Integrated Circuits, IC06
December 1990
INTEGRATED CIRCUITS
74HC/HCT7030
9-bit x 64-word FIFO register; 3-state
The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications
The IC06 74HC/HCT/HCU/HCMOS Logic Package Information
The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines
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December 1990 2
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
FEATURES
Synchronous or asynchronous operation
3-state outputs
Master-reset input to clear control functions
33 MHz (typ.) shift-in, shift-out rates with or without flags
Very low power consumption
Cascadable to 25 MHz (typ.)
Readily expandable in word and bit dimensions
Pinning arranged for easy board layout: input pins
directly opposite output pins
Output capability: standard
ICCcategory: LSI
GENERAL DESCRIPTION
The 74HC/HCT7030 are high-speed Si-gate CMOS devices specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT7030 is an expandable, First-In First-Out (FIFO) memory organized as 64 words by 9 bits. A 33 MHz data-rate makes it ideal for high-speed applications. Even at high frequencies, the I
CC
dynamic is very low
(f
max
= 18 MHz; VCC= 5 V produces a dynamic ICCof
80 mA). If the device is not continuously operating at f
max
,
then ICCwill decrease proportionally. With separate controls for shift-in (SI) and shift-out (SO),
reading and writing operations are completely independent, allowing synchronous and asynchronous data transfers. Additional controls include a master-reset input (MR) and an output enable input (OE). Flags for data-in-ready (DIR) and data-out-ready (DOR) indicate the status of the device.
Devices can be interconnected easily to expand word and bit dimensions. All output pins are directly opposite the corresponding input pins thus simplifying board layout in expanded applications.
INPUTS AND OUTPUTS Data inputs (D
0
to D8)
As there is no weighting of the inputs, any input can be assigned as the MSB. The size of the FIFO memory can be reduced from the 9 × 64 configuration, i.e. 8 × 64, 7 × 64, down to 1 × 64, by tying unused data input pins to V
CC
or GND.
Data outputs (Q
0
to Q8)
As there is no weighting of the outputs, any output can be assigned as the MSB. The size of the FIFO memory can be reduced from the 9 × 64 configuration as described for data inputs. In a reduced format, the unused data output pins must be left open circuit.
Master-reset (
MR)
When MR is LOW, the control functions within the FIFO are cleared, and data content is declared invalid. The data-in-ready (DIR) flag is set HIGH and the data-out-ready (DOR) flag is set LOW. The output stage remains in the state of the last word that was shifted out, or in the random state existing at power-up.
Status flag outputs (DIR, DOR)
Indication of the status of the FIFO is given by two status flags, data-in-ready (DIR) and data-out-ready (DOR):
Shift-in control (SI)
Data is loaded into the input stage on a LOW-to-HIGH transition of SI. A HIGH-to-LOW transition triggers an automatic data transfer process (ripple through). If SI is held HIGH during reset, data will be loaded at the rising edge of the
MR signal.
Shift-out control (
SO)
A LOW-to-HIGH transition of SO causes the DOR flags to go LOW. A HIGH-to-LOW transition of SO causes upstream data to move into the output stage, and empty locations to move towards the input stage (bubble-up).
Output enable (
OE)
The outputs Q0to Q8are enabled whenOE = LOW. When OE = HIGH the outputs are in the high impedance OFF-state.
DIR = HIGH indicates the input stage is empty and
ready to accept valid data
DIR = LOW indicates that the FIFO is full or that a
previous shift-in operation is not complete (busy)
DOR = HIGH assures valid data is present at the
outputs Q
0
to Q8(does not indicate that new
data is awaiting transfer into the output stage)
DOR = LOW indicates the output stage is busy or
there is no valid data
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December 1990 3
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
QUICK REFERENCE DATA
GND = 0 V; T
amb
=25°C; tr=tf= 6 ns
Notes
1. C
PD
is used to determine the dynamic power dissipation (PDin µW):
PD=CPD× V
CC
2
× fi+∑(CV
CC
2
× fo) where: fi= input frequency in MHz fo= output frequency in MHz (CV
CC
2
× fo) = sum of outputs CL= output load capacitance in pF VCC= supply voltage in V
2. For HC the condition is VI= GND to V
CC
For HCT the condition is VI= GND to VCC− 1.5 V
ORDERING INFORMATION
See
“74HC/HCT/HCU/HCMOS Logic Package Information”
.
SYMBOL PARAMETER CONDITIONS
TYPICAL
UNIT
HC HCT
t
PHL/ tPLH
propagation delay CL= 15 pF; VCC=5 V
MR to DIR and DOR 21 26 ns SO to Q
n
36 40 ns
f
max
maximum clock frequency
SI and SO
33 29 MHz
C
I
input capacitance 3.5 3.5 pF
C
P
power dissipation capacitance per package notes 1 and 2 660 660 pF
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December 1990 4
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
PIN DESCRIPTION
Note
1. Pin 14 must be connected to GND. Pins 1 and 2 can be left floating or connected to GND, however it is not allowed to let current flow in either direction between pins 1, 2 and 14.
PIN NO. SYMBOL NAME AND FUNCTION
1, 2, 14 GND ground (0 V) 3 DIR data-in-ready output 4 SI shift-in input (LOW-to-HIGH, edge-triggered) 5, 6, 7, 8, 9, 10, 11, 12, 13 D
0
to D
8
parallel data inputs
15
OE output enable input (active LOW)
24, 23, 22, 21, 20, 19, 18, 17, 16 Q
0
to Q
8
3-state parallel data outputs 25 DOR data-out-ready output 26
SO shift-out input (HIGH-to-LOW, edge-triggered)
27
MR asynchronous master-reset input (active LOW)
28 V
CC
positive supply voltage
Fig.1 Pin configuration. Fig.2 Logic symbol. Fig.3 IEC logic symbol.
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
APPLICATIONS
High-speed disc or tape controller
Video timebase correction
A/D output buffers
Voice synthesis
Input/output formatter for digital filters and FFTs
Bit-rate smoothing
Fig.4 Functional diagram.
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December 1990 6
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
FUNCTIONAL DESCRIPTION Data input
Following power-up, the master-reset (
MR) input is pulsed LOW to clear the FIFO memory (see Fig.8). The data-in-ready flag (DIR = HIGH) indicates that the FIFO input stage is empty and ready to receive data. When DIR is valid (HIGH), data present at D0to D8can be shifted-in using the SI control input. With SI = HIGH, data is shifted into the input stage and a busy indication is given by DIR going LOW.
The data remains at the first location in the FIFO until SI is set to LOW. With SI = LOW data moves through the FIFO to the output stage, or to the last empty location. If the FIFO is not full after the SI pulse, DIR again becomes valid (HIGH) to indicate that space is available in the FIFO. The DIR flag remains LOW if the FIFO is full (see Fig.6). The SI pulse must be made LOW in order to complete the shift-in process.
With the FIFO full, SI can be held HIGH until a shift-out (SO) pulse occurs. Then, following a shift-out of data, an empty location appears at the FIFO input and DIR goes HIGH to allow the next data to be shifted-in. This remains at the first FIFO location until SI again goes LOW (see Fig.7).
Data transfer
After data has been transferred from the input stage of the FIFO following SI = LOW, data moves through the FIFO asynchronously and is stacked at the output end of the register. Empty locations appear at the input end of the FIFO as data moves through the device.
Data output
The data-out-ready flag (DOR = HIGH) indicates that there is valid data at the output (Q
0
to Q8). The initial master-reset at power-on (MR = LOW) sets DOR to LOW (see Fig.8). After MR = HIGH, data shifted into the FIFO moves through to the output stage causing DOR to go HIGH. As the DOR flag goes HIGH, data can be shifted-out using the SO control input. With SO = HIGH, data in the output stage is shifted out and a busy indication is given by DOR going LOW. When SO is made LOW, data moves through the FIFO to fill the output stage and an empty location appears at the input stage. When the output stage is filled DOR goes HIGH, but if the last of the valid data has been shifted out leaving the FIFO empty the DOR flag remains LOW (see Fig.9). With the FIFO empty, the last word that was shifted-out is latched at the output Q0to Q8.
With the FIFO empty, the SO input can be held HIGH until the SI control input is used. Following an SI pulse, data moves through the FIFO to the output stage, resulting in the DOR flag pulsing HIGH and a shift-out of data occurring. The SO control must be made LOW before additional data can be shifted out (see Fig.10).
High-speed burst mode
If it is assumed that the shift-in/shift-out pulses are not applied until the respective status flags are valid, it follows that the shift-in/shift-out rates are determined by the status flags. However, without the status flags a high-speed burst mode can be implemented. In this mode, the burst-in/burst-out rates are determined by the pulse widths of the shift-in/shift-out inputs and burst rates of 35 MHz can be obtained. Shift pulses can be applied without regard to the status flags but shift-in pulses that would overflow the storage capacity of the FIFO are not allowed (see Figs 11 and 12).
Expanded format
With the addition of a logic gate, the FIFO is easily expanded to increase word length (see Fig.17). The basic operation and timing are identical to a single FIFO, with the exception of an additional gate delay on the flag outputs. If during application, the following occurs:
SI is held HIGH when the FIFO is empty, some additional logic is required to produce a composite DIR pulse (see Figs 7 and 18).
SO is held HIGH when the FIFO is full, some additional logic is required to produce a composite DOR pulse (see Figs 10 and 18).
Due to the part-to-part spread of the ripple through time, the flag signals of FIFOAand FIFOBwill not always coincide and the AND-gate will not produce a composite flag signal. The solution is given in Fig.18.
The “7030” is easily cascaded to increase the word capacity and no external components are needed. In the cascaded configuration, all necessary communications and timing are performed by the FIFOs. The intercommunication speed is determined by the minimum flag pulse widths and the flag delays. The data rate of cascaded devices is typically 25 MHz. Word-capacity can be expanded to and beyond 128-words × 9-bits (see Fig.19).
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December 1990 7
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
Fig.5 Logic diagram.
(see control flip-flops)
(1) LOW on S input of flip-flops FS, FB and FP will set Q output to HIGH independent of state on R input.
(2) LOW on R input to FF1 to FF64 will set Q output to LOW independent of state on S input.
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December 1990 8
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
DC CHARACTERISTICS FOR 74HC
For the DC characteristics see
“74HC/HCT/HCU/HCMOS Logic Family Specifications”
.
Output capability: standard ICCcategory: LSI
AC CHARACTERISTICS FOR 74HC
GND = 0 V; t
r=tf
= 6 ns; CL= 50 pF
SYMBOL PARAMETER
T
amb
(°C)
UNIT
TEST CONDITIONS
74HC
V
CC
(V)
WAVEFORMS+25 −40 to +85 −40 to +125
min. typ. max. min. max. min. max.
t
PHL
/ t
PLH
propagation delay
MR to DIR, DOR
69 25 20
210 42 36
265 53 45
315 63 54
ns 2.0
4.5
6.0
Fig.8
t
PHL
/ t
PLH
propagation delay
SI to DIR
77 28 22
235 47 40
295 59 50
355 71 60
ns 2.0
4.5
6.0
Fig.6
t
PHL
/ t
PLH
propagation delay
SO to DOR
102 37 30
315 63 54
395 79 67
475 95 81
ns 2.0
4.5
6.0
Fig.9
t
PHL
/ t
PLH
propagation delay
DOR to Q
n
11 4 3
35 7 6
45 9 8
55 11 9
ns 2.0
4.5
6.0
Fig.10
t
PHL
/ t
PLH
propagation delay
SO to Q
n
113 41 33
345 69 59
430 86 73
520 104 88
ns 2.0
4.5
6.0
Fig.14
t
PLH
propagation delay/ ripple through delay
SI to DOR
2.5
0.9
0.7
8.0
1.6
1.3
10
2.0
1.6
12
2.4
1.9
µs 2.0
4.5
6.0
Fig.10
t
PLH
propagation delay/
bubble-up delay SO to DIR
3.3
1.2
1.0
10.0
2.0
1.6
12
2.5
2.0
15
3.0
2.4
µs 2.0
4.5
6.0
Fig.7
t
PZH
/ t
PZL
3-state output enable
OE to Q
n
52 19 15
175 35 30
220 44 37
265 53 45
ns 2.0
4.5
6.0
Fig.16
t
PHZ
/ t
PLZ
3-state output disable
OE to Q
n
50 18 14
150 30 26
190 38 33
225 45 38
ns 2.0
4.5
6.0
Fig.16
t
THL
/ t
TLH
output transition time 19
7 6
75 15 13
95 19 16
110 22 19
ns 2.0
4.5
6.0
Fig.14
t
W
SI pulse width
HIGH or LOW
50 10 9
14 5 4
65 13 11
75 15 13
ns 2.0
4.5
6.0
Fig.6
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December 1990 9
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
t
W
SO pulse width
HIGH or LOW
100 20 17
33 12 10
125 25 21
150 30 26
ns 2.0
4.5
6.0
Fig.9
t
W
DIR pulse width
HIGH
10 5 4
47 17 14
145 29 25
8 4 3
180 36 31
8 4 3
220 44 38
ns 2.0
4.5
6.0
Fig.7
t
W
DOR pulse width
HIGH
10 5 4
47 17 14
145 29 25
8 4 3
180 36 31
8 4 3
220 44 38
ns 2.0
4.5
6.0
Fig.10
t
W
MR pulse width
LOW
70 14 12
22 8 6
90 18 15
105 21 18
ns 2.0
4.5
6.0
Fig.8
t
rem
removal time
MR to SI
80 16 14
24 8 7
100 20 17
120 24 20
ns 2.0
4.5
6.0
Fig.15
t
su
set-up time
Dnto SI
35
7
6
36
13
10
45
9
8
55
11
9
ns 2.0
4.5
6.0
Fig.13
t
h
hold time
Dnto SI
135 27 23
44 16 13
170 34 29
205 41 35
ns 2.0
4.5
6.0
Fig.13
f
max
maximum clock pulse
frequency SI, SO burst mode
9.9 30 36
2.8 14 16
2.4 12 14
MHz 2.0
4.5
6.0
Figs 11 and 12
f
max
maximum clock pulse
frequency SI, SO using flags
9.9 30 36
2.8 14 16
2.4 12 14
MHz 2.0
4.5
6.0
Figs 6 and 9
f
max
maximum clock pulse
frequency SI, SO cascaded
7.6 23 27
2.2 11 13
1.8
9.2 11
MHz 2.0
4.5
6.0
Figs 6 and 9
SYMBOL PARAMETER
T
amb
(°C)
UNIT
TEST CONDITIONS
74HC
V
CC
(V)
WAVEFORMS+25 −40 to +85 −40 to +125
min. typ. max. min. max. min. max.
Page 10
December 1990 10
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
DC CHARACTERISTICS FOR 74HCT
For the DC characteristics see
“74HC/HCT/HCU/HCMOS Logic Family Specifications”
.
Output capability: standard ICCcategory: LSI
Note to HCT types
The value of additional quiescent supply current (ICC) for a unit load of 1 is given in the family specifications. To determine I
CC
per input, multiply this value by the unit load coefficient shown in the table below.
AC CHARACTERISTICS FOR 74HCT
GND = 0 V; t
r=tf
= 6 ns; CL= 50 pF
INPUT UNIT LOAD COEFFICIENT
OE SI D
n
MR SO
1.00
1.50
0.75
1.50
1.50
SYMBOL PARAMETER
T
amb
(°C)
UNIT
TEST CONDITIONS
74HCT
V
CC
(V)
WAVEFORMS+25 −40 to +85 −40 to +125
min. typ. max. min. max. min. max.
t
PHL
/ t
PLH
propagation delay
MR to DIR, DOR
30 51 53 63 ns 4.5 Fig.8
t
PHL
/ t
PLH
propagation delay
SI to DIR
29 49 61 74 ns 4.5 Fig.6
t
PHL
/ t
PLH
propagation delay
SO to DOR
39 67 84 101 ns 4.5 Fig.9
t
PHL
/ t
PLH
propagation delay
SO to Q
n
46 78 98 117 ns 4.5 Fig.14
t
PHL
/ t
PLH
propagation delay
DOR to Q
n
7 12 15 18 ns 4.5 Fig.10
t
PLH
propagation delay/ripple
through delay SI to DOR
0.9 1.6 2.0 2.4 µs 4.5 Fig.10
t
PLH
propagation delay/
bubble-up delay SO to DIR
1.2 2.0 2.5 3.0 µs 4.5 Fig.7
t
PZH
/ t
PZL
3-state output enable
OE to Q
n
20 35 44 53 ns 4.5 Fig.16
t
PHZ
/ t
PLZ
3-state output disable
OE to Q
n
19 35 44 53 ns 4.5 Fig.16
t
THL
/ t
TLH
output transition time 7 15 19 22 ns 4.5 Fig.14
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
t
W
SI pulse width
HIGH or LOW
12 6 15 18 ns 4.5 Fig.6
t
W
SO pulse width
HIGH or LOW
15 9 19 22 ns 4.5 Fig.9
t
W
DIR pulse width
HIGH
7 22 37 6 46 6 56 ns 4.5 Fig.7
t
W
DOR pulse width
HIGH
6 20 35 5 44 5 53 ns 4.5 Fig.10
t
W
MR pulse width
LOW
18 10 23 27 ns 4.5 Fig.8
t
rem
removal time
MR to SI
18 10 23 27 ns 4.5 Fig.15
t
su
set-up time
Dnto SI
5 16 4 4 ns 4.5 Fig.13
t
h
hold time
Dnto SI
30 18 38 45 ns 4.5 Fig.13
f
max
maximum clock pulse
frequency SI, SO burst mode
15 26 12 10 MHz 4.5 Figs 11 and 12
f
max
maximum clock pulse
frequency SI, SO using flags
15 26 12 10 MHz 4.5 Figs 6 and 9
f
max
maximum clock pulse
frequency SI, SO cascaded
13 22 10 8.6 MHz 4.5 Figs 6 and 9
SYMBOL PARAMETER
T
amb
(°C)
UNIT
TEST CONDITIONS
74HCT
V
CC
(V)
WAVEFORMS+25 −40 to +85 −40 to +125
min. typ. max. min. max. min. max.
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December 1990 12
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
AC WAVEFORMS Shifting in sequence FIFO empty to FIFO full
Fig.6 Waveforms showing the SI input to DIR output propagation
delay. The SI pulse width and SI maximum pulse frequency.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Notes to Fig.6
1. DIR initially HIGH; FIFO is prepared for valid data.
2. SI set HIGH; data loaded into input stage.
3. DIR drops LOW, input stage “busy”.
4. SI set LOW; data from first location “ripple through”.
5. DIR goes HIGH, status flag indicates FIFO prepared for additional data.
6. Repeat process to load 2nd word through to 64th word into FIFO.
7. DIR remains LOW; with attempt to shift into full FIFO, no data transfer occurs.
With FIFO full; SI held HIGH in anticipation of empty location
Fig.7 Waveforms showing bubble-up delay, SO input to DIR output
and DIR output pulse width.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Notes to Fig.7
1. FIFO is initially full, shift-in is held HIGH.
2. SO pulse; data in the output stage is unloaded, “bubble-up process of empty locations begins”.
3. DIR HIGH; when empty location reached input stage, flag indicates FIFO is prepared for data input.
4. DIR returns to LOW; FIFO is full again.
5. SI brought LOW; necessary to complete shift-in process, DIR remains LOW, because FIFO is full.
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
Master reset applied with FIFO full
Fig.8 Waveforms showing the MR input to DIR, DOR output
propagation delays and the MR pulse width.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Notes to Fig.8
1. DIR LOW, output ready HIGH; assume FIFO is full.
2. MR pulse LOW; clears FIFO.
3. DIR goes HIGH; flag indicates input prepared for valid data.
4. DOR drops LOW; flag indicates FIFO empty.
Shifting out sequence; FIFO full to FIFO empty
Fig.9 Waveforms showing the SO input to DIR output propagation
delay. The SO pulse width and SO maximum pulse frequency.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Notes to Fig.9
1. DOR HIGH; no data transfer in progress, valid data is present at output stage.
2. SO set HIGH; results in DOR going LOW.
3. DOR drops LOW; output stage “busy”.
4. SO is set LOW; data in the input stage is unloaded, and new data replaces it as empty location “bubbles-up” to input stage.
5. DOR goes HIGH; transfer process completed, valid data present at output after the specified propagation delay.
6. Repeat process to unload the 3rd through to the 64th word from FIFO.
7. DOR remains LOW; FIFO is empty.
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December 1990 14
Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
With FIFO empty; SO is held HIGH in anticipation
Fig.10 Waveforms showing ripple through delay SI input to DOR output,
DOR output pulse width and propagation delay from the DOR pulse to the Qnoutput.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Notes to Fig.10
1. FIFO is initially empty, SO is held HIGH.
2. SI pulse; loads data into FIFO and initiates ripple through process.
3. DOR flag signals the arrival of valid data at the output stage.
4. Output transition; data arrives at output stage after the specified propagation delay between the rising edge of the DOR pulse to the Qnoutput.
5. DOR goes LOW; FIFO is empty again.
6. SO set LOW; necessary to complete shift-out process. DOR remains LOW, because FIFO is empty.
Shift-in operation; high-speed burst mode
Fig.11 Waveforms showing SI minimum pulse width and SI maximum pulse frequency, in high-speed shift-in
burst mode.
In the high-speed mode, the burst-in rate is determined by the minimum shift-in HIGH and shift-in LOW specifications. The DIR status flag is a don’t care condition, and a shift-in pulse can be applied regardless of the flag. A SI pulse which would overflow the storage capacity of the FIFO is ignored.
(1) HC : V
M
= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
Shift-out operation; high-speed burst mode
Fig.12 Waveforms showing SO minimum pulse width and maximum pulse frequency, in high-speed shift-out
burst mode.
In the high-speed mode, the burst-out rate is determined by the minimum shift-out HIGH and shift-out LOW specifications. The DOR flag is a don’t care condition and a
SO pulse can be applied without regard to the flag.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Fig.13 Waveforms showing hold and set-up times for Dninput to SI input.
The shaded areas indicate when the input is permitted to change for predictable output performance. (1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
Fig.14 Waveforms showing SO input to Qnoutput
propagation delays and output transition time.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Fig.15 Waveforms showing the
MR input to SI input removal time.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Fig.16 Waveforms showing the 3-state enable and disable times for input OE.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
APPLICATION INFORMATION
Fig.17 Expanded FIFO for increased word length; 64 words × 18 bits.
The PC74HC/HCT7030 is easily expanded to increase word length. Composite DIR and DOR flags are formed with the addition of an AND gate. The basic operation and timing are identical to a single FIFO, with the exception of an added gate delay on the flags.
Fig.18 Expanded FIFO for increased word length.
This circuit is only required if the SI input is constantly held HIGH, when the FIFO is empty and the automatic shift-in cycles are started or if
SO output is constantly held HIGH, when the FIFO is full and the automatic shift-out cycles are started (see Figs 7 and 10).
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
Expanded format
Fig.19 shows two cascaded FIFOs providing a capacity of 128 words × 9 bits. Fig.20 shows the signals on the nodes of both FIFOs after the application of a SI pulse, when both FIFOs are initially empty. After a rippled through delay, data arrives at the output of FIFOA. Due to SOAbeing HIGH, a DOR pulse is generated. The requirements of SIBand DnBare satisfied by the DORApulse width and the timing between the rising edge of DORAand QnA. After a second ripple through delay, data arrives at the output of FIFOB. Fig.21 shows the signals on the nodes of both FIFOs after the application of a SOBpulse, when both FIFOs are initially full. After a bubble-up delay a DIRBpulse is generated, which acts as a SOApulse for FIFOA. One word is transferred from the output of FIFOAto the input of FIFOB. The requirements of the SOApulse for FIFOAis satisfied by the pulse width of DORB. After a second bubble-up delay an empty space arrives at DnA, at which time DIRAgoes HIGH. Fig.22 shows the waveforms at all external nodes of both FIFOs during a complete shift-in and shift-out sequence.
Fig.19 Cascading for increased word capacity; 128 words × 9 bits.
The PC74HC/HCT7030 is easily cascaded to increase word capacity without any external circuitry. In cascaded format, all necessary communications are handled by the FIFOs. Figs 17 to 19 demonstrate the intercommunication timing between FIFO
A
and FIFOB. Fig.22 gives an overview of pulses and timing of two cascaded
FIFOs, when shifted full and shifted empty again.
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
Fig.20 FIFO to FIFO communication; input timing under empty condition.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Notes to Fig.20
1. FIFOAand FIFOBinitially empty, SOAheld HIGH in anticipation of data.
2. Load one word into FIFOA; SI pulse applied, results in DIR pulse.
3. Data outA/data inBtransition; valid data arrives at FIFOAoutput stage after a specified delay of the DOR flag, meeting data input set-up requirements of FIFOB.
4. DORAand SIBpulse HIGH; (ripple through delay after SIALOW) data is unloaded from FIFOAas a result of the data output ready pulse, data is shifted into FIFOB.
5. DIRBand SOAgo LOW; flag indicates input stage of FIFOBis busy, shift-out of FIFOAis complete.
6. DIRBand SOAgo HIGH automatically; the input stage of FIFOBis again able to receive data, SO is held HIGH in anticipation of additional data.
7. DORBgoes HIGH; (ripple through delay after SIBLOW) valid data is present one propagation delay later at the FIFOBoutput stage.
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
Fig.21 FIFO to FIFO communication; output timing under full condition.
(1) HC : VM= 50%; VI= GND to VCC.
HCT: V
M
= 1.3 V; VI= GND to 3 V.
Notes to Fig.21
1. FIFOAand FIFOBinitially full, SIBheld HIGH in anticipation of shifting in new data as empty location bubbles-up.
2. Unload one word from FIFOB; SO pulse applied, results in DOR pulse.
3. DIRBand SOApulse HIGH; (bubble-up delay afterSOBLOW) data is loaded into FIFOBas a result of the DIR pulse, data is shifted out of FIFOA.
4. DORAand SIBgo LOW; flag indicates the output stage of FIFOAis busy, shift-in to FIFOBis complete.
5. DORAand SIBgo HIGH; flag indicates valid data is again available at FIFOA output stage, SIBis held HIGH, awaiting bubble-up of empty location.
6. DIRAgoes HIGH; (bubble-up delay after SOALOW) an empty location is present at input stage of FIFOA.
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
Fig.22 Waveforms showing the functionality and intercommunication between two FIFOs (refer to Fig.19).
Sequence 1 (Both FIFOs empty, starting shift-in process): After a
MR pulse has been applied FIFOAand FIFOBare empty. The DOR flags of FIFOAand FIFOBgo LOW due to no valid data being present at the outputs. The DIR flags are set HIGH due to the FIFOs being ready to accept data.
SOBis held HIGH and two SIApulses are applied (1). These pulses allow two data
words to ripple through to the output stage of FIFO
A
and to the input stage of FIFOB(2). When data arrives
at the output of FIFO
B
, a DORBpulse is generated (3). When SOBgoes LOW, the first bit is shifted out and
a second bit ripples through to the output after which DOR
B
goes HIGH (4).
Sequence 2 (FIFOB runs full): After the
MR pulse, a series of 64 SI pulses are applied. When 64 words are shifted in, DIRBremains LOW
due to FIFO
B
being full (5). DORAgoes LOW due to FIFOAbeing empty.
Sequence 3 (FIFOA runs full): When 65 words are shifted in, DOR
A
remains HIGH due to valid data remaining at the output of FIFOA.
Q
nA
remains HIGH, being the polarity of the 65th data word (6). After the 128th SI pulse, DIR remains LOW
and both FIFOs are full (7). Additional pulses have no effect. Sequence 4 (Both FIFOs full, starting shift-out process):
SI
A
is held HIGH and two SOBpulses are applied (8). These pulses shift out two words and thus allow two
empty locations to bubble-up to the input stage of FIFO
B
, and proceed to FIFOA(9). When the first empty
location arrives at the input of FIFO
A
, a DIRApulse is generated (10) and a new word is shifted into FIFOA.
SI
A
is made LOW and now the second empty location reaches the input stage of FIFOA, after which
DIR
A
remains HIGH (11).
Sequence 5 (FIFOA runs empty): At the start of sequence 5 FIFO
A
contains 63 valid words due to two words being shifted out and one word
being shifted in in sequence 4. An additional series of
SOBpulses are applied. After 63 SOBpulses, all
words from FIFO
A
are shifted into FIFOB. DORAremains LOW (12).
Sequence 6 (FIFOB runs empty): After the next
SOBpulse, DIRBremains HIGH due to the input stage of FIFOBbeing empty (13). After
another 63
SOBpulses, DORBremains LOW due to both FIFOs being empty (14). Additional SOBpulses
have no effect. The last word remains available at the output Q
n
.
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Philips Semiconductors Product specification
9-bit x 64-word FIFO register; 3-state 74HC/HCT7030
PACKAGE OUTLINES
See
“74HC/HCT/HCU/HCMOS Logic Package Outlines”
.
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