Datasheet 74 hct4066 DATASHEETS (Philips)

INTEGRATED CIRCUITS

DATA SH EET

For a complete data sheet, please also download:

•The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications

74HC/HCT4066

Quad bilateral switches

Product specification
Supersedes data of 1998 Oct 02
File under Integrated Circuits, IC06

1998 Nov 10

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

FEATURES

• Very low “ON” resistance:
50 Ω (typ.) at VCC= 4.5 V
45 Ω (typ.) at VCC= 6.0 V
35 Ω (typ.) at VCC= 9.0 V

• Output capability: non-standard

• ICC category: SSI.

The 74HC/HCT4066 have four independent analog
switches. Each switch has two input/output terminals (nY,
nZ) and an active HIGH enable input (nE). When nE is
LOW the belonging analog switch is turned off.

The “4066” is pin compatible with the “4016” but exhibits a
much lower “ON” resistance. In addition, the “ON”
resistance is relatively constant over the full input signal
range.

GENERAL DESCRIPTION

The 74HC/HCT4066 are high-speed Si-gate CMOS
devices and are pin compatible with the “4066” of the
“4000B” series. They are specified in compliance with
JEDEC standard no. 7A.

QUICK REFERENCE DATA

GND = 0 V; T

=25°C; tr=tf=6ns

amb

SYMBOL PARAMETER CONDITIONS

t

PZH

t

PHZ

C
C
C

I
PD
S

/ t

PZL

/ t

PLZ

turn-on time nE to V
turn-off time nE to V

os
os

CL= 15 pF; RL=1kΩ; VCC= 5 V 11 12 ns

input capacitance 3.5 3.5 pF
power dissipation capacitance per switch notes 1 and 2 11 12 pF
max. switch capacitance 8 8 pF

TYPICAL

UNIT

HC HCT

13 16 ns

Notes

1. C

is used to determine the dynamic power dissipation (PD in µW):

PD

a) PD=CPD× V

2

× fi+∑{(CL+ CS)×V

CC

b) fi= input frequency in MHz
c) fo= output frequency in MHz
d) ∑ {(CL+ CS)×V

2

× fo} = sum of outputs

CC

e) CL= output load capacitance in pF
f) CS= maximum switch capacitance in pF
g) VCC= supply voltage in V

2. For HC the condition is VI= GND to V

CC

For HCT the condition is VI= GND to VCC− 1.5 V

2

× fo} where:

CC

1998 Nov 10 2

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

74HC4066 DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1
74HC4066 SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
74HC4066 SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1
74HC4066 TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
74HCT4066 DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1
74HCT4066 SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
74HCT4066 SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1
74HCT4066 TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1

PIN DESCRIPTION

PIN NO. SYMBOL NAME AND FUNCTION

1, 4, 8, 11 1Y to 4Y independent inputs/outputs
2, 3, 9, 10 1Z to 4Z independent inputs/outputs
7 GND ground (0 V)
13, 5, 6, 12 1E to 4E enable inputs (active HIGH)
14 V

CC

positive supply voltage

handbook, halfpage

1Y
1Z
2Z
2Y
2E
3E

GND

1
2
3
4

4066

5
6
7

MGR253

14

V

CC

13

1E

12

4E

11

4Y

10

4Z

9

3Z

8

3Y

Fig.1 Pin configuration.

1998 Nov 10 3

handbook, halfpage

1E

13

52E

63E

12 4E

MGR254

Fig.2 Logic symbol.

11Y
21Z

42Y
32Z

83Y
93Z

114Y
104Z

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

handbook, halfpage

1
13 #
4
5#
8
6#
11
12 #

2

3

9

10

MGR255

handbook, halfpage

a. b.

Fig.3 IEC logic symbol.

FUNCTION TABLE

INPUT NE SWITCH

Loff

Hon

1

11

13 #

X1

4

11

5#

X1

8

11

6#

X1

11

11

12 #

X1

2

3

9

10

MGR256

handbook, halfpage

13
1E

1Y

1Z
2

2E

2Y

2Z
3

3E

3Y

3Z
9

4E

4Y

4Z
10

MGR257

11

12

8

6

4

5

1

Fig.4 Functional diagram.

1998 Nov 10 4

Note

1. H = HIGH voltage level; L = LOW voltage level.

handbook, halfpage

nE

V

GND

CC

nY

V

CC

nZ

MGR258

Fig.5 Schematic diagram (one switch).

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134) Voltages are referenced to GND
(GND=0V)

SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS

V

CC

±I

IK

±I

SK

±I

IS

±I

CC;

±I

GND

T

stg

P

tot

P

S

DC supply voltage −0.5 +11.0 V
DC digital input diode current 20 mA for VI<−0.5 V or VI> VCC+ 0.5 V
DC switch diode current 20 mA for VS<−0.5 V or VS> VCC+ 0.5 V
DC switch current 25 mA for −0.5 V < VS< VCC+ 0.5 V
DC VCCor GND current 50 mA

storage temperature range −65 +150 °C
power dissipation per package for temperature range: −40 to +125 °C

74HC/HCT
plastic DIL 750 mW above +70 °C: derate linearly with 12 mW/K
plastic mini-pack (SO) 500 mW above +70 °C: derate linearly with 8 mW/K
power dissipation per switch 100 mW

Note

1. To avoid drawing V

current out of terminal nZ, when switch current flows in terminal nY, the voltage drop across

CC

the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal nZ, no VCCcurrent will flow
out of terminal nY. In this case there is no limit for the voltage drop across the switch, but the voltages at nY and nZ
may not exceed VCCor GND.

RECOMMENDED OPERATING CONDITIONS

74HC 74HCT

SYMBOL PARAMETER

UNIT CONDITIONS

min. typ. max. min. typ. max.

V

CC

V

I

V

S

T

amb

T

amb

DC supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 V
DC input voltage range GND V
DC switch voltage range GND V
operating ambient

−40 +85 −40 +85 °C see DC and AC

GND V

CC

GND V

CC

CC
CC

temperature range
operating ambient

−40 +125 −40 +125 °C

V
V

CHARACTERISTICS

temperature range

t

r,tf

input rise and fall times 6.0 1000 6.0 500 ns VCC= 2.0 V

500 V
400 V
250 V

= 4.5 V

CC

= 6.0 V

CC

= 10.0 V

CC

1998 Nov 10 5

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

DC CHARACTERISTICS FOR 74HC/HCT

For 74HC: V

SYMBOL PARAMETER

R

ON

R

ON

R

ON

∆R

ON

= 2.0, 4.5, 6.0 and 9.0 V; For 74HCT: VCC= 4.5 V

CC

T

amb

(°C)

TEST CONDITIONS

74HC/HCT

+25 −40 to +85 −40 to +125

V

CC

(V)

I

S

(µA)

V

IS

UNIT

min. typ. max. min. max. min. max.

ON-resistance (peak) −− − − Ω 2.0 100 V

54 95 118 142 Ω 4.5 1000
42 84 105 126 Ω 6.0 1000

CC

to
GND

32 70 88 105 Ω 9.0 1000

ON-resistance (rail) 80 −−−Ω2.0 100 GND V

35 75 95 115 Ω 4.5 1000
27 65 82 100 Ω 6.0 1000
20 55 70 85 Ω 9.0 1000

ON-resistance (rail) 100 −−−Ω2.0 100 V

CCVIH

42 80 106 128 Ω 4.5 1000
35 75 94 113 Ω 6.0 1000
27 60 78 95 Ω 9.0 1000

maximum variation of
ON-resistance between
any two channels

−Ω2.0 V
5 Ω 4.5
4 Ω 6.0

CC

to
GND

3 Ω 9.0

V
or
V

or
V

or
V

V
or
V

V

I

IH

IL

IH

IL

IL

IH

IL

Note

1. At supply voltages approaching 2 V, the analog switch ON-resistance becomes extremely non-linear. Therefore it is
recommended that these devices be used to transmit digital signals only, when using these supply voltages.

1998 Nov 10 6

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

book, full pagewidth

handbook, full pagewidth

HIGH

(from enable inputs)

V

= 0 to VCC − GND

is

(from enable inputs)

VI = VCC or GND

V

nY

MGR259

nZ

I

is

GND

Fig.6 Test circuit for measuring ON-resistance (RON).

LOW

nY

nZ

MGR260

AA

GND

VO = GND or V

CC

Fig.7 Test circuit for measuring OFF-state current.

handbook, full pagewidth

VI = VCC or GND

HIGH

(from enable inputs)

nY

Fig.8 Test circuit for measuring ON-state current.

1998 Nov 10 7

nZ

MGR261

AA

GND

VO (open circuit)

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

60

handbook, halfpage

R

ON

(Ω)

50

40

30

20

10

09

VCC = 4.5 V

6 V

1.8 3.6 5.4 7.2

MGR262

9 V

Vis (V)

Fig.9 Typical ON-resistance (RON) as a function of input voltage (Vis) for Vis= 0 to VCC.

1998 Nov 10 8

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

DC CHARACTERISTICS FOR 74HC

Voltage are referenced to GND (ground = 0 V)

T

SYMBOL PARAMETER

V

IH

HIGH-level input
voltage

V

IL

LOW-level input
voltage

±I

I

input leakage
current

±I

S

analog switch
OFF-state
current per
channel

±I

S

analog switch
ON-state current

I

CC

quiescent
supply current

(°C)

amb

74HC

+25 −40 to +85

−40 to

+125

UNIT

min. typ. max. min. max. min. max

1.5 1.2 1.5 1.5 V 2.0

3.15 2.4 3.15 3.15 4.5

4.2 3.2 4.2 4.2 6.0

6.3 4.7 6.3 6.3 9.0

0.8 0.50 0.50 0.50 V 2.0

2.1 1.35 1.35 1.35 4.5

2.8 1.80 1.80 1.80 6.0

4.3 2.70 2.70 2.70 9.0

0.1 1.0 1.0 µA 6.0 V

0.2 2.0 2.0 10.0

0.1 1.0 1.0 µA 10.0 V

0.1 1.0 1.0 µA 10.0 V

2.0 20.0 40.0 µA 6.0 V

4.0 40.0 80.0 10.0

TEST CONDITIONS

V

V

CC

I

(V)

CC

or
GND

VS=VCC− GND

IH

or

(see Fig.7)

V

IL

VS=VCC− GND

IH

or

(see Fig.8)

V

IL

Vis= GND or

CC

or

VCC;

GND

Vos=VCCor
GND

OTHER

1998 Nov 10 9

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

AC CHARACTERISTICS FOR 74HC

GND = 0 V; t

SYMBOL PARAMETER

t

PHL/tPLH

t

PZH/tPZL

t

PHZ/tPLZ

= 6 ns; CL=50pF

r=tf

propagation delay
Visto V

os

turn-on time
nE to V

os

turn-off time
nE to V

os

T

(°C)

amb

74HC

+25 −40 to +85 −40 to +125

UNIT

V

(V)

CC

min. typ. max. min. max. min. max.

8 60 75 90 ns 2.0 RL= ∞;
3 12 15 18 4.5
2 10 13 15 6.0
2 8 10 12 9.0
36 100 125 150 ns 2.0 RL=1kΩ;
13 20 25 30 4.5
10 17 21 26 6.0
8 13 16 20 9.0
44 150 190 225 ns 2.0 RL=1kΩ;
16 30 38 45 4.5
13 26 33 38 6.0
16 24 16 20 9.0

TEST CONDITIONS

OTHER

CL=50pF
(see Fig.18)

CL=50pF
(see Figs 19
and 20)

CL=50pF
(see Figs 19
and 20)

1998 Nov 10 10

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

DC CHARACTERISTICS FOR 74HCT

Voltages are referenced to GND (ground = 0 V)

T

SYMBOL PARAMETER

V

IH

HIGH-level
input voltage

V

IL

LOW-level
input voltage

±I

I

input leakage
current

±I

S

analog switch
OFF-state
current per
channel

±I

S

analog switch
ON-state
current

I

CC

quiescent
supply current

∆I

CC

additional
quiescent
supply current
per input pin
for unit load
coefficient is 1
(note 1)

(°C)

amb

74HCT

UNIT

min. typ. max. min. max. min. max.

2.0 1.6 2.0 2.0 V 4.5

1.2 0.8 0.8 0.8 V 4.5

0.1 1.0 1.0 µA 5.5 V

0.1 1.0 1.0 µA 5.5 V

0.1 1.0 1.0 µA 5.5 V

2.0 20.0 40.0 µA 4.5

100 360 450 490 µA 4.5

TEST CONDITIONS

V

CC

V

(V)

I

to

5.5

to

5.5

CC

or
GND

IH

or
V

IL

IH

or
V

IL

V

CC

to

or

5.5

GND
VCC−

to

2.1 V

5.5

OTHER+25 −40 to +85 −40 to +125

VS=VCC− GND
(see Fig.7)

VS=VCC− GND
(see Fig.8)

Vis= GND or
VCC; Vos=VCCor
GND

other inputs at
VCCor GND

Note

1. The value of additional quiescent supply current (∆I

) for a unit load of 1 is given here. To determine ∆ICC per input,

CC

multiply this value by the unit load coefficient shown in the table below.

Table 1

INPUT UNIT LOAD COEFFICIENT

nE 1.00

1998 Nov 10 11

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

AC CHARACTERISTICS FOR 74HCT

GND = 0 V; t

r=tf

=6ns

(°C)

T

amb

74HCT

SYMBOL PARAMETER

+25 −40 to +85 −40 to +125

min. typ. max. min. max. min. max.

t

PHL/tPLH

t

PZH/tPZL

t

PHZ/tPLZ

propagation
delay Visto V

turn-on time
nE to V

os

turn-off time
nE to V

os

3 12 15 18 ns 4.5 RL= ∞;CL=50pF

os

12 24 30 36 ns 4.5 RL=1kΩ; CL=50pF

20 35 44 53 ns 4.5 RL=1kΩ; CL=50pF

ADDITIONAL AC CHARACTERISTICS FOR 74HC/HCT

Recommended conditions and typical values GND = 0 V; t

SYMBOL PARAMETER TYP. UNIT

sine wave distortion f = 1 kHz 0.04 % 4.5 4.0 R

0.02 % 9.0 8.0

sine wave distortion f = 10 kHz 0.12 % 4.5 4.0 R

0.06 % 9.0 8.0

switch “OFF” signal feed-through −50 dB 4.5 note 3 RL= 600 Ω; CL= 50 pF;

−50 dB 9.0

V

(p−p)

crosstalk between any two
switches

crosstalk voltage between enable
or address input to any switch

−60 dB 4.5 note 3 R

−60 dB 9.0

110 mV 4.5 RL= 600 Ω; CL= 50 pF;
220 mV 9.0

(peak-to-peak value)

f

max

C

minimum frequency response
(−3 dB)

S

maximum switch capacitance 8 pF

180 MHz 4.5 note 4 RL=50Ω; CL=10pF
200 MHz 9.0

r=tf

=6ns

V

CC

(V)

V

IS(p−p)

(V)

TEST CONDITIONS

UNIT

V

CC

OTHER

(V)

(see Fig.18)

(see Figs 19 and 20)

(see Figs 19 and 20)

CONDITIONS

=10kΩ; CL=50pF

L

(see Fig.16)

=10kΩ; CL=50pF

L

(see Fig.16)

f = 1 MHz (see Figs 10 and 17)

= 600 Ω; CL= 50 pF;

L

f = 1 MHz (see Fig.12)

f = 1 MHz (nE, square wave
between VCC and GND,
tr=tf= 6 ns) (see Fig.14)

(see Figs 11 and 15)

Notes

1. V

is the input voltage at nY or nZ terminal, whichever is assigned as an input.

is

2. Vosis the output voltage at nY or nZ terminal, whichever is assigned as an output.

3. Adjust input voltage Visis 0 dBM level (0 dBM = 1 mW into 600 Ω).

4. Adjust input voltage Visis 0 dBM level at Vosfor 1 MHz (0 dBM = 1 mW into 50 Ω).

1998 Nov 10 12

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

handbook, full pagewidth

0

(dB)

−20

−40

−60

−80

−100

10 10

2

Test conditions: VCC= 4.5 V; GND = 0 V; RL=50Ω; R

Fig.10 Typical switch “OFF” signal feed-through as a function of frequency.

source

3

10

=1kΩ.

MGR263

4

10

5

10

f (kHz)

6

10

handbook, full pagewidth

5

(dB)

0

−5
10 10

2

Test conditions: VCC= 4.5 V; GND = 0 V; RL=50Ω; R

source

3

10

=1kΩ.

4

10

Fig.11 Typical frequency response.

MGR264

5

10

f (kHz)

6

10

1998 Nov 10 13

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

handbook, full pagewidth

Fig.12 Test circuit for measuring crosstalk between any two switches; channel ON condition.

handbook, full pagewidth

V

0.1 µF

i

2R

V

CC

2R

L

R

L

channel

ON

V

CC

2R

L

L

channel

OFF

V

CC

2R

L

2R

L

2R

L

CLdB

nZ/nYnY/nZ

C

L

MGM265

nZ/nYnY/nZ

MGR266

GND

V

os

GND

Fig.13 Test circuit for measuring crosstalk between any two switches; channel OFF condition.

The crosstalk is defined as follows
(oscilloscope output):

page

handbook, full pagewidth

V(p-p)

MGR267

Fig.14 Test circuit for measuring crosstalk between control and any switch.

1998 Nov 10 14

V

CC

GND

2R

V

CC

2R

L

C

L

L

nZ/nYnY/nZ

oscilloscope

MGR268

V

os

GND

V

CC

2R

L

2R

nE

D.U.T.

L

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

handbook, full pagewidth

0.1 µF

V

sine-wave

Adjust input voltage to obtain 0 dBM at Voswhen fin= 1 MHz. After set-up frequency of finis increased to obtain a reading of −3 dB at Vos.

is

channel

ON

V

CC

2R

L

2R

CLdB

L

nZ/nYnY/nZ

MGR269

V

os

GND

Fig.15 Test circuit for measuring minimum frequency response.

handbook, full pagewidth

fin = 1 kHz
sine-wave

10 µF

V

is

channel

ON

V

CC

2R

L

DISTORTION

2R

C

L

L

METER

nZ/nYnY/nZ

MGR270

V

os

GND

Fig.16 Test circuit for measuring sine wave distortion.

handbook, full pagewidth

V

0.1 µF

is

channel

OFF

V

CC

Fig.17 Test circuit for measuring switch “OFF” signal feed-through.

1998 Nov 10 15

2R

L

2R

CLdB

L

nZ/nYnY/nZ

MGR271

V

os

GND

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

AC WAVEFORMS

10%

t

r

90%

50%

50%

handbook, full pagewidth

V

is

V

os

(1) HC: VM= 50%; VI= GND to VCC; HCT: VM= 1.3 V; VI= GND to 3 V.

Fig.18 Waveforms showing the input (Vis) to output (Vos) propagation delays.

t

f

90 %

nE INPUT

OUTPUT
LOW - to - OFF
OFF - to - LOW

OUTPUT
HIGH - to - OFF
OFF - to - HIGH

MGA846

(1)

V

M

t

PLH

10 %

t

PLZ

t

PHZ

outputs
enabled

10 %

90 %

t

f

t

PHL

outputs

disabled

V

CC

GND

MGR272

t

r

t

PZL

50 %

t

PZH

50 %

outputs
enabled

Fig.19 Waveforms showing the turn-on and turn-off times.

TEST CIRCUIT AND WAVEFORMS

V

handbook, full pagewidth

PULSE

GENERATOR

V

I

V

CC

is

D.U.T.

R

T

Fig.20 Test circuit for measuring AC performance.

1998 Nov 10 16

V

CC

V

O

switch

R

L

C

L

open

GND

MGR273

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

Table 2 Conditions

TEST SWITCH V

t

PZH

t

PZL

t

PHZ

t

PLZ

GND V

V

CC

GND V

V

CC

others open pulse

Table 3 Definitions for Figs 20 and 21:

SYMBOL DEFINITION

C

L

R

T

t

r

handbook, full pagewidth

load capacitance including jig and probe capacitance (see AC CHARACTERISTICS for values)
termination resistance should be equal to the output impedance ZOof the pulse generator
tf= 6 ns, when measuring f

NEGATIVE

INPUT PULSE

POSITIVE

INPUT PULSE

90%

10%

, there is no constraint on tr, tfwith 50% duty factor

max

t

W

V

M
10%

t

(tf)t

THL

t

(tr)t

TLH

90%

V

M

t

W

TLH
THL

IS

CC

GND

CC

GND

AMPLITUDE

0 V

(tr)
(tf)

AMPLITUDE

0 V

MGR274

Fig.21 Input pulse definitions.

Table 4

FAMILY AMPLITUDE V

74HC V

CC

74HCT 3.0 V 1.3 V < 2ns 6ns

1998 Nov 10 17

tr;t

f

M

f

;

max

PULSE WIDTH

OTHER

50% < 2ns 6ns

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

PACKAGE OUTLINES

DIP14: plastic dual in-line package; 14 leads (300 mil)

D

seating plane

L

Z

14

pin 1 index

e

b

SOT27-1

M

E

A

2

A

A

1

w M

b

1

8

E

c

(e )

1

M

H

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

mm

OUTLINE

VERSION

SOT27-1

1 2

min.

max.

1.73

1.13

0.068

0.044

IEC JEDEC EIAJ

050G04 MO-001AA

b

b

1

0.53

0.38

0.021

0.015

0.014

0.009

REFERENCES

cD

0.36

0.23

(1) (1)

19.50

18.55

0.77

0.73

1998 Nov 10 18

7

L

Ee M

6.48

6.20

0.26

0.24

e

1

3.60

3.05

0.14

0.12

M

E

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

10.0

8.3

0.39

0.33

H

0.2542.54 7.62

ISSUE DATE

w

0.010.10 0.30

92-11-17
95-03-11

Z

max.

2.24.2 0.51 3.2

0.0870.17 0.020 0.13

(1)

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

SO14: plastic small outline package; 14 leads; body width 3.9 mm

D

c

y

Z

14

pin 1 index

1

e

8

A

2

7

w M

b

p

SOT108-1

E

H

E

A

1

L

detail X

A

X

v M

A

Q

(A )

A

3

θ

L

p

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

mm

inches

A

max.

1.75

0.069

A

1

0.25

0.10

0.010

0.004

A2A

1.45

1.25

0.057

0.049

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

(1)E(1)

cD

8.75

8.55

0.35

0.34

4.0

3.8

0.16

0.15

1.27

0.050

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE

VERSION

SOT108-1

IEC JEDEC EIAJ

076E06S MS-012AB

REFERENCES

1998 Nov 10 19

eHELLpQZywv θ

1.05

0.041

1.0

0.4

0.039

0.016

0.7

0.25

0.6

0.028

0.01 0.004

0.024

0.25 0.1

0.01

6.2

5.8

0.244

0.228

EUROPEAN

PROJECTION

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

o

8

o

0

95-01-23
97-05-22

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm

D

c

y

Z
14

pin 1 index

8

A

2

A

E

H

E

1

SOT337-1

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

p

MO-150AB

7

w M

b

p

cD

0.20

6.4

0.09

6.0

REFERENCES

0 2.5 5 mm

scale

(1)E(1)

5.4

0.65 1.25 0.2

5.2

1

e

DIMENSIONS (mm are the original dimensions)

mm

OUTLINE
VERSION

SOT337-1

A

max.

2.0

0.21

0.05

1.80

1.65

IEC JEDEC EIAJ

0.25

0.38

0.25

UNIT A1A2A3b

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

1998 Nov 10 20

detail X

eHELLpQZywv θ

7.9

7.6

1.03

0.63

0.9

0.7

EUROPEAN

PROJECTION

0.13 0.1

(1)

1.4

0.9

ISSUE DATE

95-02-04
96-01-18

o

8

o

0

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm

D

c

y

Z

14

pin 1 index

8

17

w M

b

e

p

A

2

A

1

E

H

E

L

detail X

SOT402-1

A

X

v M

A

Q

(A )

3

A

θ

L

p

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A1A2A

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

A

max.

0.15

mm

1.10

OUTLINE
VERSION

SOT402-1 MO-153

0.05

0.95

0.80

IEC JEDEC EIAJ

0.25

b

3

p

0.30

0.19

0.2

0.1

(1)E(2) (1)

cD

5.1

4.5

4.3

0.65

4.9

REFERENCES

1998 Nov 10 21

eHELLpQZywv θ

6.6

6.2

0.75

0.50

0.4

0.3

EUROPEAN

PROJECTION

0.13 0.10.21.0

0.72

0.38

ISSUE DATE

94-07-12
95-04-04

o

8

o

0

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

SOLDERING
Introduction

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.

Through-hole mount packages

S

OLDERING BY DIPPING OR BY SOLDER WAVE

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg(max)

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

M

ANUAL SOLDERING

Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

W

AVE SOLDERING

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

ANUAL SOLDERING

M
Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1998 Nov 10 22

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4066

Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

WAVE REFLOW

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable

(2)

Surface mount HLQFP, HSQFP, HSOP, SMS not suitable

(4)

PLCC

, SO suitable suitable −

LQFP, QFP, TQFP not recommended

(3)

(4)(5)

− suitable
suitable −

suitable −

(1)

DIPPING

SQFP not suitable suitable −

SOLDERING METHOD

SSOP, TSSOP, VSO not recommended

(6)

suitable −

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Nov 10 23

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone]

Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 245106/00/03/pp24 Date of release: 1998 Nov 10 Document order number: 9397 750 04779