Datasheet 74f189a DATASHEETS (Philips)

Page 1
74F189A
64-bit TTL bipolar RAM, inverting (3-State)
Product specification IC15 Data Handbook
 
1990 Feb 23
Page 2
Philips Semiconductors Product specification
74F189A64-bit TTL bipolar RAM, inverting (3-State)

FEA TURES

•High speed performance
•Replaces 74F189
•Address access time: 8ns max vs 28ns for 74F189
•Power dissipation: 4.3mW/bit
•Schottky clamp TTL
•One chip enable
are fully decoded on chip. The outputs are in high impedance state whenever the chip enable (CE) is high. The outputs are active only in the READ mode (WE
= high) and the output data is the
complement of the stored data.
TYPICAL
SUPPL Y
CURRENT
( TOTAL)
TYPE
TYPICAL ACCESS
TIME
74F189A 5.0ns 55mA
•Inverting outputs (for non-inverting outputs see 74F219A)
•3-State outputs
•74F189A in 150 mil wide SO is preferred options for new designs

DESCRIPTION

The 74F189A is a high speed, 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and

ORDERING INFORMATION

ORDER CODE
DESCRIPTION COMMERCIAL RANGE DRAWING NUMBER
VCC = 5V ±10%, T
16-pin plastic Dual In-line Package N74F189AN SOT38-4 16-pin plastic Small Outline (150mil) N74F189AD SOT109-1
= 0°C to +70°C
amb

INPUT AND OUTPUT LOADING AND FAN OUT TABLE

PINS DESCRIPTION 74F (U.L.)
D0 – D3 Data inputs 1.0/1.0 20µA/0.6mA A0 – A3 Address inputs 1.0/1.0 20µA/0.6mA
CE Chip enable input (active low) 1.0/2.0 20µA/1.2mA
WE Write enable input (active low) 1.0/2.0 20µA/1.2mA
Q0 – Q3 Data outputs 150/40 3mA/24mA
NOTE: One (1.0) FAST unit load is defined as: 20µA in the high state and 0.6mA in the low state.

PIN CONFIGURATION

1
A0
2
CE
3
WE
4
D0
Q0
5
D1
6
Q1
GND
16 15 14
13 12
11 107
98
SF00299
V
CC
A1 A2
A3 D3
3
Q
D2 Q2

LOGIC SYMBOL

15 14 13
VCC = pin 16
GND = pin 8
1
2 3
HIGH/LOW
4
D0 D2 D3D1
A0 A1 A2 A3 CE
WE
Q0 Q1 Q2 Q3
57911
LOAD VALUE
HIGH/LOW
61012
SF00300
1990 Feb 23 853–1309 98908
2
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Philips Semiconductors Product specification
74F189A64-bit TTL bipolar RAM, inverting (3-State)

IEC/IEEE SYMBOL

1
15 14
13
2 3
4
6 10 12

LOGIC DIAGRAM

RAM 16X4
0
0
A
15
1 G1
1 EN [READ] 1 C2 [WRITE]
A,2D A
1
A0
15
A1
14
A2
13
A3
Decoder
Drivers
5 7 9
11
Address Decoder
SF00301
D0 D1 D2 D3
4 6 10 12
Data buffers
16–word x
memory cell

FUNCTION TABLE

INPUTS OUTPUT OPERATING
CE WE Dn Q
L H X
L L L
H L H High impedance Write “1” H X X High impedance Disable input
NOTES:
H = High voltage level L = Low voltage level X = Don’t care
4–bit array
n
Complement of stored
data High
impedance
3
WE
2
CE
MODE
Read
Write “0”
Output buffers
V
= Pin 16
CC
GND = Pin 8
57911
Q0Q1Q2Q3
SF00302

ABSOLUTE MAXIMUM RATINGS

(Operation beyond the limit set forth in this table may impair the useful life of the device. Unless otherwise noted these limits are over the operating free air temperature range.)
SYMBOL
V
CC
V
IN
I
IN
V
OUT
I
OUT
T
amb
T
stg
Supply voltage –0.5 to +7.0 V Input voltage –0.5 to +7.0 V Input current –30 to +5 mA
Voltage applied to output in high output state –0.5 to V Current applied to output in low output state 48 mA Operating free air temperature range 0 to +70 Storage temperature range –65 to +150
PARAMETER RATING UNIT
CC
V
°C °C
1990 Feb 23
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Philips Semiconductors Product specification
SYMBOL
PARAMETER
74F189A64-bit TTL bipolar RAM, inverting (3-State)

RECOMMENDED OPERATING CONDITIONS

LIMITS UNIT
MIN NOM MAX
V
T
V
V
I
I
CC
IH IL
I
Ik OH OL amb
Supply voltage 4.5 5.0 5.5 V High–level input voltage 2.0 V Low–level input voltage 0.8 V Input clamp current –18 mA High–level output current –3 mA Low–level output current 24 mA Operating free air temperature range 0 +70

DC ELECTRICAL CHARACTERISTICS

(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
V
OH
High-level output voltage VCC = MIN, VIL = MAX
PARAMETER TEST CONDITIONS
VIH = MIN, IOH = MAX
V
V
I I
Low-level output voltage VCC = MIN, VIL = MAX
OL
VIH = MIN, I
Input clamp voltage VCC = MIN, II = I
IK
I
Input current at maximum input voltage VCC = MAX, VI = 7.0V 100
I
High–level input current VCC = MAX, VI = 2.7V 20
IH
Low–level input current others VCC = MAX, VI = 0.5V -0.6 mA
IL
OL
= MAX
IK
CE, WE -1.2 mA
Offset output current, high–level voltage applied
Offset output current, low–level voltage applied
Short-circuit output current
3
VCC = MAX, VI = 2.7V 50 µA
VCC = MAX, VI = 0.5V –50 µA
VCC = MAX -60 -150 mA Supply current (total) VCC = MAX, CE = WE = GND 55 80 mA Input capacitance VCC = 5V, VIN = 2.0V 4 pF
IN
Output capacitance VCC = 5V, V
= 2.0V 7 pF
OUT
C
I
OZH
I
OZL
I
OS
I
CC
C
OUT
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
3. Not more than one output should be shorted at a time. For testing I
= 5V, T
CC
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
amb
= 25°C.
, the use of high-speed test apparatus and/or sample-and-hold
OS
of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any sequence of parameter tests, IOS tests should be performed last.
1
±10%V
±5%V
±10%V
±5%V
CC
CC
CC
CC
MIN TYP
2.4 V
2.7 3.4 V
T
= –40 to +85°C
A
°C
LIMITS UNIT
2
MAX
0.35 0.50 V
0.35 0.50 V
-0.73 -1.2 V
µA µA
1990 Feb 23
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Philips Semiconductors Product specification
74F189A64-bit TTL bipolar RAM, inverting (3-State)

AC ELECTRICAL CHARACTERISTICS

LIMITS
T
= +25°C T
amb
SYMBOL PARAMETER TEST VCC = +5.0V
CONDITION
CL = 50pF, RL = 500Ω CL = 50pF, RL = 500Ω
MIN TYP MAX MIN MAX
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
t
PZH
t
PZL
t
PHZ
t
PLZ
Access time Enable time
Disable time CE to Qn
Write recovery time Enable time
Disable time WE to Qn
Propagation delay An to Qn
CE to Qn
WE to Qn
Waveform 1
Waveform 2
Waveform 3
Waveform 4
Waveform 4
2.5
2.0
2.0
2.0
2.5
1.5
2.0
2.5
3.5
1.5
5.0
4.5
3.5
4.0
4.5
3.0
4.0
4.5
5.5
3.5

AC SETUP REQUIREMENT

T
= +25°C T
amb
SYMBOL PARAMETER TEST VCC = +5.0V
tsu(H) tsu(L)
th(H) th(L)
tsu(H) tsu(L)
th(H) th(L)
tsu(L)
th(L)
tw(L)
Setup time, high or low An to WE
Hold time, high or low An to WE
Setup time, high or low Dn to WE
Hold time, high or low Dn to WE
Setup time, low CE (falling edge) to WE (falling edge)
Hold time, low WE (falling edge) to WE (rising edge)
Pulse width, low WE
CONDITION
Waveform 4
Waveform 4
Waveform 4
Waveform 4
Waveform 4 0 0 ns
Waveform 4 6.5 7.5 ns
Waveform 4 7.0 8.0 ns
CL = 50pF, RL = 500Ω CL = 50pF, RL = 500Ω
MIN TYP MAX MIN MAX
4.5
4.5 0
0
7.5
6.5 0
0
8.0
8.0
6.0
7.0
7.0
5.5
6.5
7.5
8.5
6.5
LIMITS
= 0°C to +70°C
amb
VCC = +5.0V ± 10%
2.5
2.0
1.5
2.0
2.0
1.5
2.0
2.5
3.0
1.5
= 0°C to +70°C
amb
8.0
8.0
7.0
7.5
8.0
6.0
7.0
8.0
9.0
7.0
VCC = +5.0V ± 10%
5.0
5.0 0
0
9.0
8.0 0
0
UNIT
ns
ns
ns
ns
ns
UNIT
ns
ns
ns
ns

AC WAVEFORMS FOR READ CYCLES

An
Qn
NOTE: For all waveforms, VM = 1.5V.
1990 Feb 23
V
M
t
PHL
V
M
t
PLH
Waveform 1. Read cycle, address access time
SF00303
5
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Philips Semiconductors Product specification
74F189A64-bit TTL bipolar RAM, inverting (3-State)
CE
Qn
V
M
t
PZH
V
M
t
PZL
NOTE: For all waveforms, VM = 1.5V.
Waveform 2. Read cycle, chip enable access time
CE
Qn
NOTE: For all waveforms, VM = 1.5V.

AC WAVEFORMS FOR WRITE CYCLE

Waveform 3. Read cycle, chip disable time
SF00304
V
M
t
PHZ
V
M
t
PLZ
SF00305
An
Dn
CE
WE
Qn
V
M
V
M
V
tsu (H or L) th ( L)
NOTE: For all waveforms, VM = 1.5V.
M
tsu (H or L)
V
M
tw ( L)
t
PHZ
Hi–Z
M
t
PLZ
V
Waveform 4. Write cycle
V
M
th (H or L)
th (H or L)tsu ( L)
t
PZH
t
PZL
V
M
V
V
M
M
V
M
V
M
SF00306
1990 Feb 23
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Philips Semiconductors Product specification
74F189A64-bit TTL bipolar RAM, inverting (3-State)

TEST CIRCUIT AND WAVEFORM

V
CC
PULSE
GENERATOR
V
IN
R
T
D.U.T.
V
OUT
R
C
L
L
Test Circuit for Totem-Pole Outputs
DEFINITIONS:
= Load resistor;
R
L
see AC ELECTRICAL CHARACTERISTICS for value.
= Load capacitance includes jig and probe capacitance;
C
L
see AC ELECTRICAL CHARACTERISTICS for value.
R
= Termination resistance should be equal to Z
T
pulse generators.
OUT
of
NEGATIVE PULSE
POSITIVE PULSE
family
74F
90%
10%
amplitude
t
w
V
M
10%
)
t
THL (tf
t
)
TLH (tr
90%
V
M
t
TLH (tr
t
THL (tf
t
w
Input Pulse Definition
INPUT PULSE REQUIREMENTS
V
rep. rate
M
3.0V
1.5V
1MHz 500ns
10%
)
)
90%
t
w
V
M
V
M
90%
10%
t
TLHtTHL
2.5ns 2.5ns
AMP (V)
0V
AMP (V)
0V
SF00006
1990 Feb 23
7
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Philips Semiconductors Product specification
64-bit TTL bipolar RAM, inverting (3-State)

DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4

74F189A
1990 Feb 23
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Philips Semiconductors Product specification
64-bit TTL bipolar RAM, inverting (3-State)

SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1

74F189A
1990 Feb 23
9
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Philips Semiconductors Product specification
64-bit TTL bipolar RAM, inverting (3-State)

Data sheet status

Data sheet status
Objective specification
Preliminary specification
Product specification
Product status
Development
Qualification
Production
Definition
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
[1]
74F189A
[1] Please consult the most recently issued datasheet before initiating or completing a design.

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
print code Date of release: 10-98 Document order number: 9397-750-05092
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