data inputs/outputs
10GNDground (0 V)
11 to 18B
19
20V
handbook, halfpage
7
to B
0
data inputs/outputs
OEoutput enable input (active LOW)
CC
DIR
A
A
A
A
A
A
A
A
GND
V
MNA173
20
CC
19
OE
B
18
0
B
17
1
B
16
2
B
15
3
B
14
4
B
13
5
B
12
6
B
11
7
1
2
0
3
1
4
2
5
3
4
5
6
7
245
6
7
8
9
10
DC supply voltage
Fig.1 Pin configuration.
1999 Sep 283
Page 4
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
handbook, halfpage
DIR
1
OE
B
0
B
1
B
2
B
3
B
4
B
5
B
6
B
7
MNA174
19
18
17
16
15
14
13
12
11
handbook, halfpage
19
G3
1
3EN1
3EN2
1
2
4
5
6
7
8
2
MNA175
18
173
16
15
14
13
12
119
A
0
2
A
1
3
A
2
4
A
3
5
A
4
6
A
5
7
A
6
8
A
7
9
Fig.2 Logic symbol.
1999 Sep 284
Fig.3 IEEE/IEC logic symbol.
Page 5
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
RECOMMENDED OPERATING CONDITIONS
SYMBOLPARAMETERCONDITIONS
UNIT
MIN.TYP. MAX. MIN.TYP. MAX.
74AHC74AHCT
V
CC
V
I
V
O
T
amb
DC supply voltage2.05.05.54.55.05.5V
input voltage0−5.50−5.5V
output voltage0−V
operating ambient temperature
range
see DC and AC
characteristics per
−40+25+85−40+25+85°C
−40+25+125 −40+25+125 °C
0−V
CC
CC
V
device
t
(∆t/∆f) input rise and fall ratesVCC= 3.3 V ±0.3 V −−100−−−ns/V
r,tf
=5V±0.5 V−−20−−20
V
CC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
SYMBOLPARAMETERCONDITIONSMIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage−0.5+7.0V
input voltage range−0.5+7.0V
DC input diode currentVI< −0.5 V; note 1−−20mA
DC output diode currentVO< −0.5 Vor VO>VCC+ 0.5 V; note 1−±20mA
DC output source or sink current −0.5V<VO<VCC+ 0.5 V−±25mA
DC VCC or GND current−±75mA
storage temperature range−65+150 °C
power dissipation per packagefor temperature range: −40 to +125 °C; note 2−500mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.
1999 Sep 285
Page 6
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
DC CHARACTERISTICS
74AHC family
Over recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOLPARAMETER
V
IH
HIGH-level input
voltage
V
IL
LOW-level input
voltage
V
OH
HIGH-level output
voltage; all
outputs
HIGH-level output
voltage
V
OL
LOW-level output
voltage; all
outputs
LOW-level output
voltage
I
I
input leakage
current
I
OZ
3-state output
OFF current
I
CC
quiescent supply
current
C
I
input capacitance−−310−10−10pF
TEST CONDITIONST
25−40 to +85−40 to +125
amb
(°C)
UNIT
OTHERVCC(V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
2.01.5−−1.5−1.5−V
3.02.1−−2.1−2.1−
5.53.85 −−3.85 −3.85 −
2.0−− 0.5−0.5−0.5V
3.0−− 0.9−0.9−0.9
5.5−− 1.65−1.65−1.65
VI=VIHor VIL;
IO= −50 µA
2.01.92.0−1.9−1.9−V
3.02.93.0−2.9−2.9−
4.54.44.5−4.4−4.4−
V
I=VIH
or VIL;
3.02.58 −−2.48 −2.40 −V
IO= −4.0 mA
V
I=VIH
or VIL;
4.53.94 −−3.8−3.70 −
IO= −8.0 mA
VI=VIHor VIL;
IO=50µA
2.0−00.1−0.1−0.1V
3.0−00.1−0.1−0.1
4.5−00.1−0.1−0.1
V
I=VIH
or VIL;
3.0−− 0.36−0.44−0.55V
IO=4mA
V
I=VIH
or VIL;
4.5−− 0.36−0.44−0.55
IO=8mA
VI=VCCor GND5.5−− 0.1−1.0−2.0µA
VI=VIHor VIL;
5.5−− ±0.25 −±2.5−±10.0 µA
VO=VCCor GND
VI=VCCor GND;
5.5−− 4.0−40−80µA
IO=0
1999 Sep 286
Page 7
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
74AHCT family
Over recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOLPARAMETER
V
IH
HIGH-level input
voltage
V
IL
LOW-level input
voltage
V
OH
HIGH-level output
voltage; all
outputs
HIGH-level output
voltage
V
OL
LOW-level output
voltage; all
outputs
LOW-level output
voltage
I
I
input leakage
current
I
OZ
3-state output
OFF current
I
CC
quiescent supply
current
∆I
CC
additional
quiescent supply
current per input
pin
C
I
input capacitance−−310−10−10pF
TEST CONDITIONST
25−40 to +85 −40 to +125
OTHERVCC(V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
4.5 to 5.5 2.0−−2.0−2.0−V
4.5 to 5.5 −− 0.8−0.8−0.8V
VI=VIHor VIL;
4.54.44.5−4.4−4.4−V
IO= −50 µA
V
I=VIH
or VIL;
4.53.94 −−3.8−3.70 −V
IO= −8.0 mA
VI=VIHor VIL;
4.5−00.1−0.1−0.1V
IO=50µA
V
I=VIH
or VIL;
4.5−− 0.36−0.44−0.55V
IO=8mA
VI=VIHor V
VI=VIHor VIL;
5.5−− 0.1−1.0−2.0µA
IL
5.5−− ±0.25 −±2.5−±10.0 µA
VO=VCCor GND
per input pin;
other inputs at
VCCor GND;
IO=0
VI=VCCor GND;
5.5−− 4.0−40−80µA
IO=0
VI=VCC− 2.1 V
4.5 to 5.5 −− 1.35−1.5−1.5mA
other inputs at
VCCor GND;
IO=0
amb
(°C)
UNIT
1999 Sep 287
Page 8
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
AC CHARACTERISTICS
Type 74AHC245
GND = 0 V; tr=tf≤3.0 ns.
SYMBOLPARAMETER
VCC= 3.0 to 3.6 V; note 1
t
PHL/tPLH
propagation delay
Anto Bn; Bnto A
t
PZL/tPZH
propagation delay
OE to An;
OE to Bn; signal
name DIR
t
PLZ/tPHZ
propagation delay
OE to An;
OE to Bn; signal
name DIR
t
PHL/tPLH
propagation delay
Anto Bn; Bnto A
t
PZL/tPZH
propagation delay
OE to An;
OE to Bn; signal
name DIR
t
PLZ/tPHZ
propagation delay
OE to An;
OE to Bn; signal
name DIR
TEST CONDITIONST
amb
(°C)
25−40 to +85−40 to +125
WAVEFORMSC
L
MIN.TYP.MAX. MIN. MAX. MIN. MAX.
see Figs 4 and 6 15 pF −5.08.41.010.01.010.5ns
n
see Figs 5 and 6−6.513.21.015.51.016.5ns
−7.512.51.015.51.016.0ns
see Figs 4 and 6 50 pF −6.511.91.013.51.015.0ns
n
see Figs 5 and 6−9.016.71.019.01.021.0ns
−10.015.81.018.01.020.0ns
UNIT
1999 Sep 288
Page 9
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
SYMBOLPARAMETER
= 4.5 to 5.5 V; note 2
V
CC
t
PHL/tPLH
propagation delay
Anto Bn; Bnto A
t
PZL/tPZH
propagation delay
OE to An;
OE to Bn; signal
name DIR
t
PLZ/tPHZ
propagation delay
OE to An;
OE to Bn; signal
name DIR
t
PHL/tPLH
propagation delay
Anto Bn; Bnto A
t
PZL/tPZH
propagation delay
OE to An;
OE to Bn; signal
name DIR
t
PLZ/tPHZ
propagation delay
OE to An;
OE to Bn; signal
name DIR
TEST CONDITIONST
amb
(°C)
25−40 to +85−40 to +125
WAVEFORMSC
L
MIN.TYP.MAX. MIN. MAX. MIN. MAX.
see Figs 4 and 6 15 pF −3.55.51.06.51.07.0ns
n
see Figs 5 and 6−4.08.51.010.01.011.0ns
−4.57.81.09.21.010.0ns
see Figs 4 and 6 50 pF −5.07.51.08.51.09.5ns
n
see Figs 5 and 6−5.010.61.012.01.013.5ns
−6.09.71.011.01.012.5ns
UNIT
Notes
1. Typical values at VCC= 3.3 V.
2. Typical values at VCC= 5.0 V.
1999 Sep 289
Page 10
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
Type 74AHCT245
GND = 0 V; tr=tf≤3.0 ns.
SYMBOLPARAMETER
VCC= 4.5 to 5.5 V; note 1
t
PHL/tPLH
propagation delay
Anto Bn; Bnto A
t
PZL/tPZH
propagation delay
OE to An;
OE to Bn; signal
name DIR
t
PLZ/tPHZ
propagation delay
OE to An;
OE to Bn; signal
name DIR
t
PHL/tPLH
propagation delay
Anto Bn; Bnto A
t
PZL/tPZH
propagation delay
OE to An;
OE to Bn; signal
name DIR
t
PLZ/tPHZ
propagation delay
OE to An;
OE to Bn; signal
name DIR
TEST CONDITIONST
amb
(°C)
25−40 to +85−40 to +125
WAVEFORMSC
L
MIN. TYP. MAX. MIN.MAX. MIN.MAX.
see Figs 4 and 6 15 pF−3.57.71.08.51.010.0ns
n
see Figs 5 and 6−5.013.81.015.01.017.5ns
−5.014.41.015.51.018.0ns
see Figs 4 and 6 50 pF−4.58.71.09.51.011.0ns
n
see Figs 5 and 6−6.014.81.016.01.018.5ns
−6.015.41.016.51.019.5ns
UNIT
Note
1. Typical values at V
= 5.0 V.
CC
1999 Sep 2810
Page 11
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
AC WAVEFORMS
GND
V
V
V
M
INPUT
CC
V
OH
OL
I
FAMILY
VI INPUT
REQUIREMENTS
AHCGND to V
CC
handbook, halfpage
An, Bn INPUT
Bn, An OUTPUT
50% V
AHCTGND to 3.0 V1.5 V50% V
Fig.4 The input (An,Bn) to output (Bn,An) propagation delays.
GND
V
CC
V
OL
V
OH
GND
V
I
handbook, full pagewidth
OEn INPUT
OUTPUT
LOW-to-OFF
OFF-to-LOW
OUTPUT
HIGH-to-OFF
OFF-to-HIGH
t
PLH
OUTPUT
50% V
V
M
t
PLZ
t
PHZ
outputs
enabled
V
M
V
M
V
CC
CC
VOL + 0.3 V
M
VOH − 0.3 V
outputs
disabled
V
M
t
PHL
V
M
MNA176
t
PZL
V
M
t
PZH
V
M
outputs
enabled
MNA177
FAMILY
AHCGND to V
VI INPUT
REQUIREMENTS
CC
AHCTGND to 3.0 V1.5 V50% V
V
INPUT
50% V
M
V
M
OUTPUT
50% V
CC
CC
CC
Fig.5 The 3-state output enable and disable times.
1999 Sep 2811
Page 12
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
handbook, full pagewidth
TESTS
t
PLH/tPHL
t
PLZ/tPZL
t
PHZ/tPZH
open
V
CC
GND
PULSE
GENERATOR
1
S1
V
CC
V
I
R
D.U.T.
T
V
O
C
1000 Ω
L
MNA183
Fig.6 Load circuitry for switching times.
V
CC
open
GND
1999 Sep 2812
Page 13
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
PACKAGE OUTLINES
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
20
Z
1
y
pin 1 index
D
c
11
A
2
A
1
10
e
w M
b
p
E
H
E
detail X
A
X
v M
A
Q
(A )
L
p
L
A
3
θ
0510 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
OUTLINE
VERSION
SOT163-1
A
max.
2.65
0.10
A
1
0.30
0.10
0.012
0.004
A2A
2.45
2.25
0.096
0.089
IEC JEDEC EIAJ
075E04 MS-013AC
0.25
0.01
b
3
p
0.49
0.32
0.36
0.23
0.019
0.013
0.014
0.009
UNIT
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
(1)E(1)(1)
cD
13.0
7.6
7.4
0.30
0.29
1.27
0.050
12.6
0.51
0.49
REFERENCES
1999 Sep 2813
eHELLpQ
10.65
10.00
0.419
0.394
1.4
0.055
1.1
0.4
0.043
0.016
1.1
1.0
0.043
0.039
PROJECTION
0.25
0.250.1
0.01
0.01
EUROPEAN
ywvθ
Z
0.9
0.4
8
0.004
ISSUE DATE
0.035
0.016
95-01-24
97-05-22
0
o
o
Page 14
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm
D
c
y
Z
20
pin 1 index
11
A
2
A
1
110
w M
b
e
p
E
H
E
L
detail X
SOT360-1
A
X
v M
A
Q
(A )
3
A
θ
L
p
02.55 mm
scale
DIMENSIONS (mm are the original dimensions)
UNITA1A2A
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
A
max.
0.15
mm
1.10
OUTLINE
VERSION
SOT360-1 MO-153AC
0.05
0.95
0.80
IEC JEDEC EIAJ
0.25
b
3
p
0.30
0.19
(1)E(2)(1)
cD
0.2
6.6
4.5
0.1
REFERENCES
6.4
4.3
0.65
1999 Sep 2814
eHELLpQZywv θ
6.6
6.2
0.75
0.50
0.4
0.3
EUROPEAN
PROJECTION
0.130.10.21.0
0.5
0.2
ISSUE DATE
93-06-16
95-02-04
o
8
o
0
Page 15
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
SOLDERING
Introduction to soldering surface mount packages
Thistext gives a verybriefinsight to a complextechnology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages.Wave soldering isnot alwayssuitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit boardbyscreen printing, stencillingor
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating,soldering andcooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• Forpackageswith leads onfoursides,the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement andbefore soldering,the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Wave soldering
Conventional single wave soldering is not recommended
forsurfacemount devices (SMDs)orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
1999 Sep 2815
Page 16
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
Suitability of surface mount IC packages for wave and reflow soldering methods
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable forSSOP andTSSOP packages with a pitch (e) equal to or larger than0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Sep 2816
Page 17
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
NOTES
1999 Sep 2817
Page 18
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
NOTES
1999 Sep 2818
Page 19
Philips SemiconductorsProduct specification
Octal bus transceiver; 3-state74AHC245; 74AHCT245
NOTES
1999 Sep 2819
Page 20
Philips Semiconductors – a w orldwide compan y
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Indonesia: PT Philips Development Corporation,SemiconductorsDivision,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
1999
Internet: http://www.semiconductors.philips.com
68
Printed in The Netherlands245002/02/pp20 Date of release: 1999 Sep 28Document order number: 9397 750 06297
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