Page 1
■ HIGH SPEED: t
■ LOWPOWERDISSIPATION:
=4µA (MAX.) at TA=25oC
I
CC
■ COMPATIBLEWITHTTLOUTPUTS
V
=2V(MIN),VIL= 0.8V (MAX)
IH
■ 50Ω TRANSMISSION LINE DRIVING
= 5.0 ns (TYP.) at VCC=5V
PD
CAPABILITY
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=24mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAY S:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERAN GE:
V
(OPR)= 4.5V to 5.5V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
74SERIES86
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The ACT86 is an advanced high-speed CMOS
QUAD EXCLUSIVE OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for ow power
applications mantaining high speed operation
74ACT86
QUAD EXCLUSIVE OR GATE
PRELIMINARY DATA
B
(Plastic Package)
(Micro Package)
ORDERCODES:
74ACT86B 74ACT86M
similarto equivalent Bipolar Schottky TTL.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunityand stabeoutput.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOSoutput voltage levels.
All inputs and outputs are equipped with
protectioncircuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
M
PINCONNECTION AND IEC LOGIC SYMBOLS
April 1997
1/7
Page 2
74ACT86
INPUTAND OUTPUTEQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM B O L NAME AN D F UNC T I ON
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTHTABLE
ABY
LLL
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
Supply Voltage -0.5 to +7 V
CC
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 200 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symbol Parameter Valu e Unit
V
V
V
T
dt/dv Input Rise and Fall Time V
1) VINfrom0.8V to2.0 V
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: -40to +85
op
= 4.5 to 5.5V (note 1) 8 ns/V
CC
CC
CC
V
V
o
C
Page 3
DC SPECIFICATIONS
74ACT86
Symbol Parameter Test Condition s Value Unit
T
V
CC
(V)
High Level Input Voltage 4.5 VO= 0.1 V or
V
IH
5.5 2.0 1.5 2.0
Low Level Input Voltage 4.5 VO= 0.1 V or
V
IL
5.5 1.5 0.8 0.8
High Level Output
V
OH
Voltage
4.5
5.5 I
4.5 I
5.5 I
Low Level Output
V
OL
Voltage
4.5
5.5 I
4.5 I
5.5 I
Input Leakage Current
I
I
Max ICC/Input 5.5 VI=VCC-2.1 V 0.6 1.5 mA
I
CCT
Quiescent Supply
I
CC
5.5
5.5 VI=VCCor GND 4 40 µA
V
- 0.1 V
CC
- 0.1 V
V
CC
IO=-50 µA 4.4 4.49 4.4
(*)
=
V
I
V
IH
V
IL
(*)
V
I
V
IH
V
IL
=-50 µA 5.4 5.49 5.4
O
or
=-24 mA 3.86 3.76
O
=-24 mA 4.86 4.76
O
IO=50 µA 0.001 0.1 0.1
=
=50 mA 0.001 0.1 0.1
O
or
=24 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
VI=VCCor GND ±0.1 ±1 µA
=25oC-40to85
A
Min. Typ. Ma x. Min. Max.
2.0 1.5 2.0
1.5 0.8 0.8
o
C
Current
Dynamic Output Current
I
OLD
OHD
(note 1, 2)
I
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω.
(*)All outputs loaded.
5.5 V
= 1.65 Vmax 75 mA
OLD
V
= 3.85 V min -75 mA
OHD
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Input tr=tf=3ns)
Symbol Parameter Test Cond ition Value Unit
t
Propagation Delay Time 5.0
PLH
t
PHL
(*) Voltagerangeis 5V ±0.5V
V
(V)
CC
(*)
T
=25oC-40to85
A
Min. Typ. Ma x. Min. Max.
1.5 5.0 9.0 1.0 9.5 ns
o
C
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Condition s Value Unit
=25oC-40to85
T
A
Min. Typ. Ma x. Min. Max.
4
Input Capacitance
C
IN
Power Dissipation
C
PD
V
CC
(V)
5.0
5.0 31 pF
Capacitance (note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. I
(opr) =CPD• VCC•fIN+ICC/n (percircuit)
CC
o
C
pF
3/7
Page 4
74ACT86
TEST CIRCUIT
CL= 50 pF or equivalent (includes jig and probe capacitance)
= 500Ω or equivalent
R
L=R1
R
WAVEFORM: PROPAGATIONDELAYS (f=1MHz)
of pulse generator (typically 50Ω)
T=ZOUT
4/7
Page 5
Plastic DIP14 MECHANICAL DATA
74ACT86
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
mm inch
P001A
5/7
Page 6
74ACT86
SO14 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45 (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S 8 (max.)
mm inch
6/7
P013G
Page 7
74ACT86
Information furnished is believed to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use ofsuch informationnor for any infringement of patents or otherrights of third parties whichmay resultsfrom its use. No
licenseisgranted by implicationor otherwise underany patent or patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in this publicationare subject to change withoutnotice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSONMicroelectronicsproductsarenot authorized foruseas criticalcomponents in lifesupportdevicesor systemswithoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - All Rights Reserved
Australia- Brazil - Canada- China- France - Germany - HongKong- Italy- Japan- Korea - Malaysia - Malta- Morocco- The Netherlands-
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7/7
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