Datasheet 74ACT374 Datasheet (SGS Thomson Microelectronics)

Page 1
WITH 3 STATE OUTPUT NON INVERTING
HIGH SPEED:
=260MHz (TYP.) at VCC=5V
f
MAX
LOWPOWERDISSIPATION:
=8µA (MAX.) at TA=25oC
I
COMPATIBLEWITHTTLOUTPUTS
V
=2V(MIN),VIL= 0.8V (MAX)
IH
50TRANSMISSION LINE DRIVING
CAPABILITY
SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=24mA (MIN)
OH
BALANCEDPROPAGATIONDELAY S:
t
t
PLH
PHL
OPERATINGVOLTAGERAN GE:
V
(OPR)= 4.5V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74SERIES374
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The ACT374 is an advanced high-speed CMOS OCTAL D-TYPE FLIP FLOP with 3 STATE OUTPUT NON INVERTING fabricated with sub-micron silicon gate and double-layer metal wiring C power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL.
These 8 bit D-Type flip-flops are controlled by a clockinput (CK) andan output enableinput (OE).
2
MOS technology. It is ideal for low
74ACT374
OCTAL D-TYPE FLIP FLOP
B
(Plastic Package)
(Micro Package)
ORDER CODES :
74ACT374B 74ACT374M
On the positive transition of the clock, the Q outputs will be set to logic state that were setup at the D inputs.
While the (OE) input is low, the 8 outputs will be in a normal logic state (high or low logic level) and while high level the outputs will be in a high impedancestate.
The output control does not affect the internal operation of flip flop; that is, the old data can be retained or the new data can be entered even while the outputsare off.
The device is designed to interface directly High Speed CMOS system with TTL and NMOS components.
All inputs and outputs are equipped with protectioncircuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
M
PINCONNECTION AND IEC LOGIC SYMBOLS
April 1997
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Page 2
74ACT374
INPUTAND OUTPUTEQUIVALENT CIRCUIT PIN DESCRIPTION
PI N No SYM B O L NAME AND FUNCT I ON
1 OE 3 State Output Enable
2, 5, 6, 9,
12, 15, 16,
19
3, 4, 7, 8,
13, 14, 17,
18 11 CLOCK Clock Input (LOW to
10 GND Ground (0V) 20 V
TRUTH TABLE
INPUTS OUTPUTS
OE CK D Q
HXXZ L X NO CHANGE LLL LHH
X:DON’T CARE Z:HIGHIMPEDANCE
Q0 to Q7 3 State Outputs
D0 to D7 Data Inputs
CC
Input (Active LOW)
HIGH, edge triggered)
Positive Supply Voltage
LOGICDIAGRAMS
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Page 3
74ACT374
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnot implied.
RECOMMENDED OPERATINGCONDITIONS
Symbol Parameter Valu e Unit
V
V
V
T
dt/dv Input Rise and Fall Time V
1) VINfrom0.8V to2.0V
Supply Voltage -0.5 to +7 V
CC
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 400 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: -40to +85
op
= 4.5 to 5.5V (note 1) 8 ns/V
CC
CC CC
o
C
o
C
V V
o
C
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Page 4
74ACT374
DC SPECIFICATIONS
Symbol Parameter Test Condition s Value Unit
T
V
CC
(V)
High Level Input Voltage 4.5 VO= 0.1 V or
V
IH
5.5 2.0 1.5 2.0
Low Level Input Voltage 4.5 VO= 0.1 V or
V
IL
5.5 1.5 0.8 0.8
High Level Output
V
OH
Voltage
4.5
5.5 I
4.5 I
5.5 I
Low Level Output
V
OL
Voltage
4.5
5.5 I
4.5 I
5.5 I
Input Leakage Current
I
I
3 State Output Leakage
I
OZ
5.5
5.5 VI=VIHor V
Current Max ICC/Input 5.5 VI=VCC-2.1 V 0.6 1.5 mA
I
CCT
Quiescent Supply
I
CC
5.5 VI=VCCor GND 8 80 µA
V
- 0.1 V
CC
- 0.1 V
V
CC
IO=-50 µA 4.4 4.49 4.4
(*)
=
V
I
V
IH
V
IL
(*)
V
I
V
IH
V
IL
=-50 µA 5.4 5.49 5.4
O
or
=-24 mA 3.86 3.76
O
=-24 mA 4.86 4.76
O
IO=50 µA 0.001 0.1 0.1
=
=50 mA 0.001 0.1 0.1
O
or
=24 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
VI=VCCor GND ±0.1 ±1 µA
VO=VCCor GND
IL
=25oC-40to85
A
Min. Typ. Max. Min . Max.
2.0 1.5 2.0
1.5 0.8 0.8
±0.5 ±5 µA
o
C
Current Dynamic Output Current
I
OLD
OHD
(note 1, 2)
I
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 . (*)All outputs loaded.
5.5 V
= 1.65 V max 75 mA
OLD
V
= 3.85 V min -75 mA
OHD
V
V
V
V
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Page 5
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 , Input tr=tf=3ns)
74ACT374
Symbol Parameter Test Condition Value Unit
o
C
t
Propagation Delay Time
PLH
t
CK to Q
PHL
Output Enable Time 5.0
t
PZL
t
PZH
t
Output Disable Time 5.0
PLZ
t
PHZ
t
CK Pulse Width, HIGH
w
V
(V)
5.0
5.0
CC
T
=25oC-40to85
A
Min. Typ. Max. Min . Max.
(*)
(*)
(*)
(*)
5.0 10.0 11.0 ns
6.0 10.0 11.0 ns
6.5 10.0 11.0 ns
1.5 5.0 5.0 ns
or LOW Setup Time Q to CK
t
s
5.0
(*)
0.5 5.0 5.0 ns
HIGH or LOW Hold Time Q to CK
t
h
5.0
(*)
-0.5 2.0 2.0 ns
HIGH or LOW
f
MAX
Maximim Clock
5.0
(*)
100 260 85 MHz
Frequency
(*) Voltage rangeis5V ±0.5V
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Condition s Value Unit
T
V
CC
(V)
C
Output Capacitance
OUT
Input Capacitance
C
IN
Power Dissipation
C
PD
5.0
5.0
5.0 25 pF
=25oC-40to85
A
Min. Typ. Max. Min . Max.
8 4
Capacitance (note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
(opr)= CPD• VCC•fIN+ICC/n (percircuit)
CC
o
C
pF pF
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Page 6
74ACT374
TEST CIRCUIT
TEST SWITCH
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL= 50 pF or equivalent (includes jig and probe capacitance)
= 500or equivalent
R
L=R1
R
of pulse generator (typically 50)
T=ZOUT
Open
2V
CC
Open
WAVEFORM 1: PROPAGATIONDELAYS, SETUP AND HOLD TIMES (f=1MHz;50% duty cycle)
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Page 7
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIMES(f=1MHz;50% duty cycle)
74ACT374
WAVEFORM 3: PULSE WIDTH
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Page 8
74ACT374
Plastic DIP20 (0.25)MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.254 0.010
B 1.39 1.65 0.055 0.065 b 0.45 0.018
b1 0.25 0.010
D 25.4 1.000
E 8.5 0.335 e 2.54 0.100
e3 22.86 0.900
F 7.1 0.280
I 3.93 0.155 L 3.3 0.130 Z 1.34 0.053
mm inch
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P001J
Page 9
SO20 MECHANICAL DATA
74ACT374
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.65 0.104
a1 0.10 0.20 0.004 0.007 a2 2.45 0.096
b 0.35 0.49 0.013 0.019
b1 0.23 0.32 0.009 0.012
C 0.50 0.020
c1 45° (typ.)
D 12.60 13.00 0.496 0.512
E 10.00 10.65 0.393 0.419 e 1.27 0.050
e3 11.43 0.450
F 7.40 7.60 0.291 0.299 L 0.50 1.27 0.19 0.050
M 0.75 0.029
S8°(max.)
mm inch
P013L
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Page 10
74ACT374
Information furnished is believed tobe accurate and reliable. However,SGS-THOMSON Microelectronics assumesno responsability for the consequencesof use ofsuch information nor for anyinfringement of patents or otherrights of third parties which may resultsfrom its use. No licenseisgranted by implicationor otherwise underany patentor patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publicationare subject to change withoutnotice.This publication supersedes andreplaces all information previouslysupplied. SGS-THOMSONMicroelectronics productsare notauthorized for useas criticalcomponents in lifesupportdevicesor systemswithoutexpress writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - AllRights Reserved
Australia- Brazil - Canada- China- France- Germany - HongKong- Italy- Japan- Korea - Malaysia- Malta- Morocco- TheNetherlands-
Singapore- Spain- Sweden- Switzerland- Taiwan - Thailand - United Kingdom- U.S.A
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.
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