Datasheet 74ACT373 Datasheet (SGS Thomson Microelectronics)

Page 1
74ACT373
OCTAL D-TYPE LATCH
WITH 3 STATE OUTPUT NON INVERTING
HIGH SPEED: t
LOWPOWERDISSIPATION:
=8µA (MAX.)at TA=25oC
I
CC
COMPATIBLEWITH TTL OUTPUTS
V
=2V(MIN),VIL= 0.8V (MAX)
IH
50TRANSMISSIONLINE DRIVING
=6 ns (TYP.)atVCC=5V
PD
CAPABILITY
SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=24mA(MIN)
OH
BALANCED PROPAGATIONDELAYS:
t
t
PLH
PHL
OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5V to 5.5V
CC
PIN AND FUNCTION COMPATIBLE WITH
74SERIES373
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The ACT373 is an advanced high-speed CMOS OCTAL D-TYPE LATCH with 3 STATE OUTPUT NON INVERTING fabricated with sub-micron silicon gate and double-layermetal wiring C
2
MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalentBipolar Schottky TTL.
These 8 bit D-Type latch are controlledby a latch enable input (LE) and an output enable input
B
(Plastic Package)
(Micro Package)
M
ORDER CODES :
74ACT373B 74ACT373M
(OE). While the LE inputs is held at a high level, the Q
outputs will follow the data input precisely or inversely. When the LE is taken low, the Q outputs will be latched precisely or inversely at the logic level of D input data. While the (OE) input is low, the 8 outputs will be in a normallogic state (high or low logic level) and while high level the outputs will be in a high impedance state.
This device is designed to interface directly High Speed CMOS systems with TTL and NMOS components.
All inputs and outputs are equipped with protectioncircuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
PINCONNECTION AND IEC LOGIC SYMBOLS
April 1997
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Page 2
74ACT373
INPUTAND OUTPUTEQUIVALENTCIRCUIT PIN DESCRIPTION
PI N No SYM B O L NAME AN D FUNCT I ON
1 OE 3 State Output Enable
2, 5, 6,
9, 12, 15,
16, 19
3, 4, 7,
8, 13, 14,
17, 18
11 LE Latch Enable
10 GND Ground (0V) 20 V
TRUTH TABLE
INPUTS OUTPUTS
OE LE D Q
HXXZ L L X NO CHANGE * LHLL LHHH
X:DON’T CARE Z:HIGHIMPEDANCE *:Q OUTPUTS ARE LATCHED AT THE TIMEWHENTHE LE INPUTIS TAKEN LOWLOGIC LEVEL.
Q0 to Q7 Data Inputs
D0 to D7 3 State Outputs
CC
Input (Active LOW)
Input
Positive Supply Voltage
LOGICDIAGRAMS
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Page 3
74ACT373
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDEDOPERATINGCONDITIONS
Symbol Parameter Valu e Unit
V
V
V
T
dt/dv Input Rise and Fall Time V
1) VINfrom0.8Vto2.0V
Supply Voltage -0.5 to +7 V
CC
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 400 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: -40 to +85
op
= 4.5 to 5.5V (note 1) 8 ns/V
CC
CC CC
o
C
o
C
V V
o
C
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Page 4
74ACT373
DC SPECIFICATIONS
Symbol Parameter Test Condit ions Value Unit
=25oC-40to85
V
CC
(V)
High Level Input Voltage 4.5 VO= 0.1 V or
V
IH
5.5 2.0 1.5 2.0
Low Level Input Voltage 4.5 VO= 0.1 V or
V
IL
5.5 1.5 0.8 0.8
High Level Output
V
OH
Voltage
4.5
5.5 I
4.5 I
5.5 I
Low Level Output
V
OL
Voltage
4.5
5.5 I
4.5 I
5.5 I
Input Leakage Current
I
I
3 State Output Leakage
I
OZ
5.5
5.5 VI=VIHor V
Current Max ICC/Input 5.5 VI=VCC-2.1 V 0.6 1.5 mA
I
CCT
Quiescent Supply
I
CC
5.5 VI=VCCor GND 8 80 µA
V
- 0.1 V
CC
- 0.1 V
V
CC
IO=-50 µA 4.4 4.49 4.4
(*)
=
V
I
V
IH
V
IL
(*)
V
I
V
IH
V
IL
=-50 µA 5.4 5.49 5.4
O
or
=-24 mA 3.86 3.76
O
=-24 mA 4.86 4.76
O
IO=50 µA 0.001 0.1 0.1
=
=50 mA 0.001 0.1 0.1
O
or
=24 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
VI=VCCor GND ±0.1 ±1 µA
VO=VCCor GND
IL
T
A
Min. Typ. Max. Min . Max.
2.0 1.5 2.0
1.5 0.8 0.8
±0.5 ±5 µA
o
C
Current Dynamic Output Current
I
OLD
OHD
(note 1, 2)
I
1) Maximum testduration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 . (*)All outputs loaded.
5.5 V
= 1.65 V max 75 mA
OLD
V
= 3.85 V min -75 mA
OHD
V
V
V
V
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Page 5
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 , Inputtr=tf=3ns)
74ACT373
Symbol Parameter Test Cond ition Value Unit
o
C
t
Propagation Delay Time
PLH
t
LE to Q
PHL
Propagation Delay Time
t
PLH
t
DtoQ
PHL
Output Enable Time 5.0
t
PZL
t
PZH
t
Output Disable Time 5.0
PLH
t
PHL
t
CK Pulse Width, HIGH
w
V
(V)
5.0
5.0
5.0
CC
=25oC-40to85
T
A
Min. Typ. Max. Min . Max.
(*)
(*)
(*)
(*)
(*)
6.0 10.0 11.5 ns
5.5 10.0 11.5 ns
6.0 9.5 10.5 ns
7.0 11.0 12.5 ns
1.0 7.0 8.0 ns
or LOW Setup Time Q to CK
t
s
5.0
(*)
0.5 7.0 8.0 ns
HIGH or LOW Hold Time Q to CK
t
h
5.0
(*)
0.5 0.0 1.0 ns
HIGH or LOW
(*) Voltagerangeis5V ± 0.5V
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Condit ions Value Unit
T
V
CC
(V)
C
Output Capacitance 5.0 10 pF
OUT
Input Capacitance
C
IN
Power Dissipation
C
PD
5.0
5.0 25 pF
=25oC-40to85
A
Min. Typ. Max. Min . Max.
5
Capacitance (note 1)
1) CPDis defined as the value ofthe IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
(opr) =CPD• VCC• fIN+ICC/n (per circuit)
CC
o
C
pF
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Page 6
74ACT373
TEST CIRCUIT
TEST SWI TCH
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL= 50 pF or equivalent (includes jig and probe capa citance)
= 500or equivalent
R
L=R1
R
of pulse generator (typically 50)
T=ZOUT
Open
2V
CC
Open
WAVEFORM 1: LE TO Qn PROPAGATION DELAYS, LE MINIMUM PULSE WIDTH, Dn TOLE SETUPAND HOLD TIMES (f=1MHz;50% dutycycle)
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Page 7
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle)
74ACT373
WAVEFORM 3: PROPAGATIONDELAY TIME (f=1MHz; 50% duty cycle)
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Page 8
74ACT373
Plastic DIP20 (0.25) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.254 0.010
B 1.39 1.65 0.055 0.065 b 0.45 0.018
b1 0.25 0.010
D 25.4 1.000
E 8.5 0.335 e 2.54 0.100
e3 22.86 0.900
F 7.1 0.280
I 3.93 0.155 L 3.3 0.130 Z 1.34 0.053
mm inch
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P001J
Page 9
SO20 MECHANICAL DATA
74ACT373
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.65 0.104
a1 0.10 0.20 0.004 0.007 a2 2.45 0.096
b 0.35 0.49 0.013 0.019
b1 0.23 0.32 0.009 0.012
C 0.50 0.020
c1 45° (typ.)
D 12.60 13.00 0.496 0.512
E 10.00 10.65 0.393 0.419 e 1.27 0.050
e3 11.43 0.450
F 7.40 7.60 0.291 0.299 L 0.50 1.27 0.19 0.050
M 0.75 0.029
S8°(max.)
mm inch
P013L
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74ACT373
Information furnished is believed to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the consequencesof use of such information nor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No licenseis granted byimplication or otherwise underany patent orpatent rightsof SGS-THOMSON Microelectronics. Specifications mentioned in this publicationare subject to change withoutnotice. This publication supersedes and replacesall information previously supplied. SGS-THOMSONMicroelectronicsproducts are notauthorizedfor useascritical components in lifesupportdevices or systems withoutexpress writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics- Printed in Italy - All Rights Reserved
Australia- Brazil - Canada- China- France- Germany - Hong Kong- Italy- Japan- Korea - Malaysia- Malta - Morocco - The Netherlands-
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SGS-THOMSONMicroelectronics GROUP OF COMPANIES
.
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