Datasheet 74ACT32MTR, 74ACT32M, 74ACT32B, 74ACT32TTR Datasheet (SGS Thomson Microelectronics)

Page 1
74ACT32
QUAD 2-INPUT OR GATE
HIGH SPEED: t
LOW POWER DISSIPATION:
I
= 2µA(MAX.) at TA=25°C
CC
COMPA TIBLE WITH TTL OUTPUTS
V
= 2V (MIN.), VIL = 0.8V (MAX.)
IH
50TRANSMISSI O N L INE DRI VING
= 4.5ns (TYP.) at VCC = 5V
PD
CAPABILITY
SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 24mA (MIN)
OH
BALANCED PROPAGATION DELAYS:
t
t
PLH
OPERATING VOL TAGE RANGE:
V
CC
PIN AND FUNCTION COMPATIBLE WITH
PHL
(OPR) = 4.5V to 5.5V
74 SERIES 32
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74ACT32 is an advanced high-speed CMOS QUAD 2-INPUT OR GATE fabricated with sub-mi­cron silicon gate and double-layer metal wiring
2
MOS tecnology.
C The internal circuit is composed of 2 stages including buffer output , which enables high noise immunity and stable output.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP 74ACT32B
SOP 74ACT32M 74ACT32MTR
TSSOP 74ACT32TTR
The device is designed to interface directly High Speed CMOS systems with TTL, NMOS and CMOS output voltage levels. All inputs and outputs are equipped w ith protec­tion circuits a gainst static discharge, giving them 2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8April 2001
Page 2
74ACT32
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
TRUTH TABLE
ABY
LLL
LHH HLH HHH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7 V
± 20 mA ± 20 mA ± 50 mA
± 200 mA
-65 to +150 °C 300 °C
V V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 0.8V to 2.0V
2/8
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time V
= 4.5 to 5.5V (note 1)
CC
4.5 to 5.5 V
CC CC
-55 to 125 °C 8 ns/V
V V
Page 3
DC SPECIFICATIONS
Test Condition Value
= 25°C
Symbol Parameter
V
CC
(V)
V
V
V
V
I
CCT
I
I
OLD
I
OHD
1) Maxim um test duration 2ms, one output loaded at tim e
2) Incid ent wave switching is guaranteed on transmission l i nes with impe dances as low as 50
High Level Input
IH
Voltage Low Level Input
IL
Voltage High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage Cur-
I
rent
Max ICC/Input Quiescent Supply
CC
Current Dynamic Output
Current (note 1, 2)
4.5 VO = 0.1 V or V
-0.1V
CC
4.5 VO = 0.1 V or V
5.5 1.5 0.8 0.8 0.8
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
V
5.5
5.5
V
5.5
V
5.5
V
-0.1V
CC
IO=-50 µA I
=-50 µA
O
I
=-24 mA
O
I
=-24 mA
O
IO=50 µA I
=50 µA
O
I
=24 mA
O
I
=24 mA
O
= VCC or GND
I
VI = VCC - 2.1V
= VCC or GND
I
= 1.65 V max
OLD
= 3.85 V min
OHD
T
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.5 2.0 2.0
1.5 0.8 0.8 0.8
4.4 4.49 4.4 4.4
5.4 5.49 5.4 5.4
3.86 3.76 3.7
4.86 4.76 4.7
0.001 0.1 0.1 0.1
0.001 0.1 0.1 0.1
0.36 0.44 0.5
0.36 0.44 0.5
± 0.1 ± 1 ± 1 µA
0.6 1.5 1.6 mA 22040µA
74ACT32
-40 to 85°C -55 to 125°C
75 50 mA
-75 -50 mA
Unit
V5.5 2.0 1.5 2.0 2.0
V
V
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500, Input tr = tf = 3ns)
Test Condition Value
= 25°C
Symbol Parameter
t
PLH tPHL
(*) Vol tage range is 5.0V ± 0.5V
Propagation Delay Time
V
5.0
(V)
CC
T
A
Min. Typ. Max. Min. Max. Min. Max.
(*)
4.5 9.0 10.0 10.0 ns
-40 to 85°C -55 to 125°C
Unit
CAPACITIVE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0
5.0 3 pF
= 10MHz
f
IN
T
A
Min. Typ. Max. Min. Max. Min. Max.
31 pF
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/4 (per gate)
CC(opr)
Unit
3/8
Page 4
74ACT32
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance) R
= R1 = 500 or equivalent
L
R
= Z
of pulse generator (typically 50)
T
OUT
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
4/8
Page 5
Plastic DIP-14 MECHANICAL DATA
74ACT32
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b0.5 0.020
b1 0.25 0.010
D200.787 E8.5 0.335
e2.54 0.100
e3 15.24 0.600
F7.10.280
I5.10.201 L3.3 0.130 Z 1.27 2.54 0.050 0.100
mm inch
P001A
5/8
Page 6
74ACT32
SO-14 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010
C0.5 0.019
c1 45 (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e1.27 0.050 e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M0.680.026
S8 (max.)
mm inch
6/8
P013G
Page 7
TSSOP14 MECHANICAL DATA
74ACT32
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A1.10.433
A1 0.05 0.10 0.15 0.002 0.004 0.006
A2 0.85 0.9 0.95 0.335 0.354 0.374
b 0.19 0.30 0.0075 0.0118
c 0.09 0.20 0.0035 0.0079
D 4.9 5 5.1 0.193 0.197 0.201
E 6.25 6.4 6.5 0.246 0.252 0.256
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0
o
o
4
o
8
o
0
o
4
o
8
L 0.50 0.60 0.70 0.020 0.024 0.028
A2
A
A1
PIN 1 IDENTIFICATION
b
e
c
K
L
E
D
E1
1
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Page 8
74ACT32
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