The ACT257 is an advanced high-speed CMOS
QUAD 2 CHANNEL MULTIPLEXER (3-STATE)
fabricated with sub-micron silicon gate and
double-layermetal wiring C
2
MOS technology.
It is ideal for low power applications mantaining
high speed operation similar to equivalentBipolar
SchottkyTTL.
These IC’s are composed of an independent 2
channel multiplexer with common SELECT and
B
(Plastic Package)
(Micro Package)
M
ORDERCODES :
74ACT257B74ACT257M
ENABLEINPUT.
TheAC257 is a noninverting multiplexer.
When the ENABLE INPUT is held ”High” outputs
of both IC’s become high impedance state. If
SELECT INPUT is held ”Low”, ”A” data is
selected, when SELECT INPUT is ”High”, ”B”
datais closen.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOSoutput voltage levels.
All inputs andoutputs areequipped with
protectioncircuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PINCONNECTION AND IEC LOGIC SYMBOLS
April 1997
1/10
Page 2
74ACT257
INPUTAND OUTPUTEQUIVALENTCIRCUIT
TRUTH TABLE
INPUTSOUTPUTS
OESELECTABY
HXXXZ
LLLXL
LLHXH
LHXLL
LHXHH
X = DON’T CARE Z =HIGH IMPEDANCE
PIN DESCRIPTION
PI N NoSYM B O LNAME A ND FUNCTI ON
1SELECTCommon Data Select Input
2, 5, 14, 111A to 4AData Input From Source A
3, 6, 13, 101B to 4BData Inputs from Source B
4, 7, 12, 91Y to 4Y3 State Multiplexer Outputs
15OE3 State Output Enable
Inputs (Active LOW)
8GNDGround (0V)
16V
CC
Positive Supply Voltage
LOGICDIAGRAMS
This logic diagram has not be used to estimate propagation delays
2/10
Page 3
74ACT257
ABSOLUTE MAXIMUMRATINGS
Symb o lParame t erVal u eUni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to thedevice may occur. Functional operation under these condition is not implied.
RECOMMENDEDOPERATINGCONDITIONS
SymbolParameterValu eUnit
V
V
V
T
dt/dvInput Rise and Fall Time V
1) VINfrom0.8Vto2.0V
Supply Voltage-0.5 to +7V
CC
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
O
DC Input Diode Current± 20mA
IK
DC Output Diode Current± 20mA
DC Output Current± 50mA
O
DC VCCor Ground Current± 200mA
GND
Storage Temperature-65 to +150
stg
Lead Temperature (10 sec)300
L
Supply Voltage4.5 to 5.5V
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature:-40 to +85
op
= 4.5 to 5.5V (note 1)8ns/V
CC
CC
CC
o
C
o
C
V
V
o
C
3/10
Page 4
74ACT257
DC SPECIFICATIONS
SymbolParameterTest Condition sValueUnit
T
V
CC
(V)
High Level Input Voltage4.5VO= 0.1 V or
V
IH
5.52.01.52.0
Low Level Input Voltage4.5VO= 0.1 V or
V
IL
5.51.50.80.8
High Level Output
V
OH
Voltage
4.5
5.5I
4.5I
5.5I
Low Level Output
V
OL
Voltage
4.5
5.5I
4.5I
5.5I
Input Leakage Current
I
I
3 State Output Leakage
I
OZ
5.5
5.5VI=VIHor V
Current
Max ICC/Input5.5VI=VCC-2.1 V0.61.5mA
I
CCT
Quiescent Supply
I
CC
5.5VI=VCCor GND880µA
V
- 0.1 V
CC
- 0.1 V
V
CC
IO=-50 µA4.44.494.4
(*)
=
V
I
V
IH
V
IL
(*)
V
I
V
IH
V
IL
=-50 µA5.45.495.4
O
or
=-24 mA3.863.76
O
=-24 mA4.864.76
O
IO=50 µA0.0010.10.1
=
=50 mA0.0010.10.1
O
or
=24 mA0.360.44
O
=24 mA0.360.44
O
VI=VCCor GND±0.1±1µA
VO=VCCor GND
IL
=25oC-40to85
A
Min.T yp . Max.Min .Max.
2.01.52.0
1.50.80.8
±0.5±5µA
o
C
Current
Dynamic Output Current
I
OLD
(note 1, 2)
I
OHD
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as lowas 50 Ω.
(*)All outputs loaded.
5.5V
= 1.65 V max75mA
OLD
V
= 3.85 V min-75mA
OHD
V
V
V
V
4/10
Page 5
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Input tr=tf=3ns)
74ACT257
SymbolParameterTest Cond itionValueUnit
o
C
t
Propagation Delay Time
PLH
t
A, B to Y
PHL
Propagation Delay Time
t
PLH
t
SEL to Y
PHL
Output Enable Time5.0
t
PZL
t
PZH
t
Output Disable Time5.0
PLZ
t
PHZ
(*) Voltagerangeis5V± 0.5V
V
(V)
5.0
5.0
CC
T
=25oC-40to85
A
Min.T yp . Max.Min .Max.
(*)
(*)
(*)
(*)
5.07.08.0ns
6.09.010.0ns
5.08.09.0ns
6.09.010.0ns
CAPACITIVE CHARACTERISTICS
SymbolParameterTest Condition sValueUnit
T
V
CC
(V)
Input Capacitance
C
IN
C
Input Capacitance
OUT
Power Dissipation
C
PD
5.0
5.0
5.031pF
=25oC-40to85
A
Min.T yp . Max.Min .Max.
4
8
Capacitance (note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. I
(opr) = CPD• VCC•fIN+ICC/n (percircuit)
CC
o
C
pF
pF
TEST CIRCUIT
TESTSWITC H
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL= 50 pF or equivalent (includes jig and probe capa citance)
= 500Ω or equivalent
R
L=R1
R
of pulse generator (typically 50Ω)
T=ZOUT
Open
2V
CC
Open
5/10
Page 6
74ACT257
WAVEFORM 1: PROPAGATION DELAYS FOR INVERTINGCONDITIONS (f=1MHz;50% duty cycle)
WAVEFORM 2: PROPAGATION DELAYS FOR NON-INVERTING CONDITIONS (f=1MHz; 50% duty
cycle)
6/10
Page 7
WAVEFORM 3: OUTPUTENABLE AND DISABLE TIME (f=1MHz;50% duty cycle)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use of such informationnor for any infringement of patents or otherrights of third parties whichmay results from its use. No
licenseis grantedby implicationor otherwise underany patentor patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subject to change without notice.This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for useascriticalcomponents in life supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printedin Italy - All Rights Reserved
Australia- Brazil - Canada - China- France- Germany- Hong Kong - Italy- Japan- Korea - Malaysia - Malta- Morocco- TheNetherlands -
Singapore- Spain- Sweden - Switzerland- Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSONMicroelectronicsGROUPOF COMPANIES
.
10/10
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