Datasheet 74AC257 Datasheet (SGS Thomson Microelectronics)

Page 1
74AC257
QUAD 2 CHANNEL MULTIPLEXER (3-STATE)
HIGH SPEED: t
=8 µA (MAX.)atTA=25oC
I
CC
HIGHNOISEIMMUNITY:
V
NIH=VNIL
50TRANSMISSION LINE DRIVING
=28%VCC(MIN.)
=4.5ns (TYP.) at VCC=5V
PD
CAPABILITY
SYMMETRICALOUTPUT IMPEDANCE:
|I
|=IOL=24mA(MIN)
OH
BALANCEDPROPAGAT IONDELAYS:
t
t
PLH
PHL
OPERATINGVOLTAGERAN GE:
V
(OPR )= 2V to 6V
CC
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES257
IMPROVEDLATCH-UP IMMUNITY
DESCRIPTION
The AC257 is an advanced high-speed CMOS QUAD 2 CHANNEL MULTIPLEXER (3-STATE) fabricated with sub-micron silicon gate and double-layermetalwiring C
2
MOS technology.
It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar SchottkyTTL.
B
(Plastic Package)
(Micro Package)
M
ORDERCODES:
74AC257B
These IC’s are composed of an independent 2 channel multiplexer with common SELECT and ENABLEINPUT.
TheAC257 is a noninverting multiplexer. Whenthe ENABLE INPUT is held ”High”, outputs
of both IC’s become high impedance state. If SELECT INPUT is held ”Low”, ”A” data is selected, when SELECT INPUT is ”High”, ”B” datais chosen.
All inputs and outputs are equipped with protectioncircuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
PINCONNECTION AND IEC LOGIC SYMBOLS
April 1997
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Page 2
74AC257
INPUTAND OUTPUTEQUIVALENTCIRCUIT
TRUTH TABLE
INPUTS OUTPUTS
OESELECTABY
HXXXZ
LLLXL LLHXH LHXLL LHXHH
X = DON’TCARE Z = HIGHIMPEDANCE
PIN DESCRIPTION
PI N No SYM B O L NAME A ND FUNCTI ON
1 SELECT Common Data Select Input 2, 5, 14, 11 1A to 4A Data Input From Source A 3, 6, 13, 10 1B to 4B Data Inputs from Source B
4, 7, 12, 9 1Y to 4Y 3 State Multiplexer Outputs
15 OE 3 State Output Enable
Inputs (Active LOW)
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
LOGICDIAGRAM
This logic diagram has not be used to estimate propagation delays
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Page 3
74AC257
ABSOLUTE MAXIMUMRATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Parame t er Value Un i t
V
V
V
T
dt/dv Input Rise and Fall Time V
1) VINfrom 30%to70%of V
Supply Voltage -0.5 to +7 V
CC
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 200 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: -40 to +85
op
= 3.0, 4.5 or 5.5 V(note 1) 8 ns/V
CC
CC
CC CC
o
C
o
C
V V
o
C
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Page 4
74AC257
DC SPECIFICATIONS
Symbol Parameter Test Condition s Value Unit
V
CC
(V)
High Level Input Voltage 3.0 VO= 0.1 V or
V
IH
4.5 3.15 2.25 3.15
V
CC
- 0.1 V
T
=25oC-40to85
A
Min. Typ. Ma x. Min. Max.
2.1 1.5 2.1
o
C
5.5 3.85 2.75 3.85
Low Level Input Voltage 3.0 VO= 0.1 V or
V
IL
4.5 2.25 1.35 1.35
V
CC
- 0.1 V
1.5 0.9 0.9
5.5 2.75 1.65 1.65
High Level Output
V
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current
I
I
3 State Output Leakage
I
OZ
Current Quiescent Supply
I
CC
3.0
4.5 I
5.5 I
V V
3.0 I
4.5 I
5.5 I
3.0
4.5 I
5.5 I
V V
3.0 I
4.5 I
5.5 I
5.5
5.5 VI=VIHor V
IO=-50 µA 2.9 2.99 2.9
(*)
I IH
V
IL
=-50 µA 4.4 4.49 4.4
O
=
=-50 µA 5.4 5.49 5.4
or
O
=-12 mA 2.56 2.46
O
=-24 mA 3.86 3.76
O
=-24 mA 4.86 4.76
O
IO=50 µA 0.002 0.1 0.1
(*)
I IH
V
IL
=50 µA 0.001 0.1 0.1
O
=
=50 µA 0.001 0.1 0.1
or
O
=12 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
VI=VCCor GND ±0.1 ±1 µA
IL
±0.5 ±5 µA
VO=VCCor GND
5.5 VI=VCCor GND 8 80 µA
Current Dynamic Output Current
I
OLD
(note 1, 2)
I
OHD
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 . (*)All outputs loaded.
5.5 V
= 1.65 V max 75 mA
OLD
V
= 3.85 V min -75 mA
OHD
V
V
V
V
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Page 5
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 , Input tr=tf=3ns)
74AC257
Symbol Parameter Test Cond ition Value Unit
o
C
ns
ns
ns
ns
t
Propagation Delay Time
PLH
t
A,B to Y
PHL
Propagation Delay Time
t
PLH
t
SEL to Y
PHL
Output Enable Time 3.3
t
PZL
t
PZH
Output Disable Time 3.3
t
PLZ
t
PHZ
(*) Voltagerange is3.3V ± 0.3V (**) Voltagerange is5V± 0.5V
V
3.3
5.0
3.3
5.0
5.0
5.0
(V)
CC
(**)
(**)
(**)
(**)
T
=25oC-40to85
A
Min. Typ. Ma x. Min. Max.
(*)
1.5 5.5 8.5 1.5 9
1.5 4.5 6 1.5 7
(*)
1.5 7 10.5 1.5 11.5
1.5 5.5 7.5 1.5 8.5
(*)
1.5 5.5 9 1.5 10
1.5 4.5 7.5 1.5 8.5
(*)
1.5 7 10 1.5 11
1.5 5.5 9 1.5 10
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Condition s Value Unit
=25oC-40to85
V
CC
(V)
C
Output Capacitance 5.0 8 pF
OUT
Input Capacitance 5.0 4 pF
C
IN
Power Dissipation
C
PD
5.0 20 pF
T
A
Min. Typ. Ma x. Min. Max.
Capacitance (note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
(opr) =CPD• VCC•fIN+ICC/n (percircuit)
CC
o
C
TEST CIRCUIT
TEST SWITC H
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL= 50 pF or equivalent (includes jig and probe capacitance) R
= 500or equivalent
L=R1
R
of pulse generator (typically 50)
T=ZOUT
Open
2V
CC
Open
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Page 6
74AC257
WAVEFORM 1: PROPAGATION DELAYS FOR INVERTINGCONDITIONS (f=1MHz;50% duty cycle)
WAVEFORM 2: PROPAGATION DELAYS FOR NON-INVERTING CONDITIONS (f=1MHz; 50% duty
cycle)
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Page 7
WAVEFORM 3: OUTPUTENABLE AND DISABLE TIME (f=1MHz;50%duty cycle)
74AC257
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Page 8
74AC257
Plastic DIP16 (0.25) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065 b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335 e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201 L 3.3 0.130 Z 1.27 0.050
mm inch
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P001C
Page 9
SO16 MECHANICAL DATA
74AC257
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.004 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45 (typ.)
D 9.8 10 0.385 0.393 E 5.8 6.2 0.228 0.244 e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050
M 0.62 0.024
S 8 (max.)
mm inch
P013H
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74AC257
Information furnished is believed to be accurate and reliable. However,SGS-THOMSON Microelectronicsassumesno responsability for the consequencesof use ofsuch informationnorfor any infringement of patents or otherrights of third parties which may resultsfrom its use. No licenseisgrantedby implicationor otherwise underany patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned in this publicationare subjectto change without notice.Thispublicationsupersedes and replacesall information previouslysupplied. SGS-THOMSONMicroelectronics products are notauthorizedforuseas criticalcomponents in lifesupportdevicesor systemswithoutexpress writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - All Rights Reserved
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.
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