•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
•Live insertion/extraction permitted
•Power-up 3-State
DESCRIPTION
The 74ABT2953 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT2953 device is an 8-bit registered inverting transceiver.
Two 8-bit back-to-back registers store data flowing in both directions
between two bidirectional buses. Data applied to the inputs is
entered and stored on the rising edge of the Clock (CPXX) provided
that the Clock Enable (CEXX
the 3-State output buffers, but is only accessible when the Output
Enable (OEXX
) is Low. Data flow from A inputs to B outputs is the
same as for B inputs to A outputs.
) is Low. The data is then present at
•Power-up reset
QUICK REFERENCE DAT A
SYMBOLPARAMETER
t
PLH
t
PHL
C
C
I
CCZ
IN
I/O
Propagation delay
CPBA to A
n or CPAB to Bn
CL = 50pF; VCC = 5V5.0ns
Input capacitanceVI = 0V or V
I/O capacitance
Outputs disabled;
= 0V or V
V
O
Total supply currentOutputs disabled; VCC =5.5V500nA
ORDERING INFORMATION
PACKAGESTEMPERATURE RANGE OUTSIDE NORTH AMERICANORTH AMERICADWG NUMBER
24-Pin Plastic DIP–40°C to +85°C74ABT9253 N74ABT2953 NSOT222-1
24-Pin plastic SO–40°C to +85°C74ABT2953 D74ABT2953 DSOT137-1
24-Pin Plastic SSOP Type II–40°C to +85°C74ABT2953 DB74ABT2953 DBSOT340-1
24-Pin Plastic TSSOP Type I–40°C to +85°C74ABT2953 PW74ABT2953PW DHSOT355-1
CONDITIONS
= 25°C; GND = 0V
T
amb
CC
CC
TYPICALUNIT
4pF
7pF
PIN CONFIGURA TION
PIN DESCRIPTION
PIN NUMBERSYMBOLNAME AND FUNCTION
1
B7
2
B6
3
B5
4
B4
5
B3
6
B2
7
B1
8
B0
9
OEAB
1015
CPAB
1114CEAB
1213GND
TOP VIEW
1995 Sep 06853-1555 15702
24
V
CC
23
A7
22
A6
21
A5
20
A4
19
A3
18
A2
17
A1
16
A0
OEBA
CPBA
CEBA
SA00305
1
10, 14
11, 13
16, 17, 18, 19,
20, 21, 22, 23
1, 2, 3, 4, 5, 6,
7, 8
9, 15
12GNDGround (0V)
24V
CPAB /
CPBA
CEAB /
CEBA
A0 – A7Data inputs/outputs (A side)
B0 – B7Data outputs/outputs (B side)
OEAB /
OEBA
CC
Clock input A to B / Clock input
B to A
Clock enable input A to B / Clock
enable input B to A
H = High voltage level
L =Low voltage level
↑ =Low-to-High transition
X = Don’t care
XX=AB or BA
NC=No change
CPXXCEXXQMODE
↑
↑
L
L
L
H
Load data
LOGIC SYMBOL (IEEE/IEC)
11
13
15
9
10
14
15
9
SA00306
168
177
186
195
204
213
222
231
EN1
EN2
EN3
EN4
C5
C6
2, 3, 6
1, 4, 5
SA00307
FUNCTION TABLE for Output Enable
INPUTSINTERNALAn or BnOPERATING
OEXXQOUTPUTSMODE
HXZDisable outputs
L
L
H = High voltage level
L =Low voltage level
X = Don’t care
XX=AB or BA
Z =High impedance ”off” state
L
H
H
L
Enable outputs
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
DC supply voltage–0.5 to +7.0V
DC input diode currentVI < 0–18mA
DC input voltage
DC output diode currentVO < 0–50mA
DC output voltage
DC output currentoutput in Low state128mA
Storage temperature range–65 to 150°C
PARAMETERCONDITIONSRATINGUNIT
3
3
1, 2
–1.2 to +7.0V
output in Off or High state–0.5 to +5.5V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
High-level output voltageVCC = 5.0V; IOH = –3mA; VI = VIL or V
VCC = 4.5V; IOH = –32mA; VI = VIL or V
Low-level output voltageVCC = 4.5V; IOL = 64mA; VI = VIL or V
Power-up output low
3
voltage
Input leakageControl pins VCC = 5.5V; VI = GND or 5.5V±0.01±1.0±1.0µA
I
VCC = 5.5V; IO = 1mA; VI = GND or V
IH
IH
IH
IH
CC
2.53.22.5V
3.03.73.0V
2.02.32.0V
0.420.550.55V
0.130.550.55V
currentData pinsVCC = 5.5V; VI = GND or 5.5V±5±100±100µA
Power-off leakage currentVCC = 0.0V; VO or VI ≤ 4.5V±5.0±100±100µA
Power-up/down 3-State
IPD
output current
4
3-State output High currentVCC = 5.5V; VO = 2.7V; VI = VIL or V
3-State output Low currentVCC = 5.5V; VO = 0.5V; VI = VIL or V
Output High leakage currentVCC = 5.5V; VO = 5.5V; VI = GND or V
Output current
1
Quiescent supply currentVCC = 5.5V; Outputs Low, VI = GND or V
Additional supply current per
input pin
2
CC
VCC = 2.1V; VO = 0.5V; VI = GND or VCC;
= Don’t care
V
OE
IH
IH
CC
±5.0±50±50µA
5.05050µA
–5.0–50–50µA
5.05050µA
VCC = 5.5V; VO = 2.5V–50–65–180–50–180mA
VCC = 5.5V; Outputs High, VI = GND or V
VCC = 5.5V; Outputs 3-State;
= GND or V
V
I
CC
VCC = 5.5V; one input at 3.4V,
other inputs at V
or GND
CC
CC
CC
110250250µA
203030mA
110250250µA
0.31.51.5mA
between 0V and 2.1V, with a transition time of up to 10msec. From VCC = 2.1V to VCC = 5V ± 10% a