Datasheet 5962-9173801M2A, 5962-9173801MRA Datasheet (NSC)

Page 1
TL/F/9566
54F/74F573 Octal D-Type Latch with TRI-STATE Outputs
August 1995
54F/74F573 Octal D-Type Latch with TRI-STATE
É
Outputs
General Description
) inputs.
This device is functionally identical to the ’F373 but has different pinouts.
Features
Y
Inputs and outputs on opposite sides of package allowing easy interface with microprocessors
Y
Useful as input or output port for microprocessors
Y
Functionally identical to ’F373
Y
TRI-STATE outputs for bus interfacing
Y
Guaranteed 4000V minimum ESD protection
Commercial Military
Package
Package Description
Number
74F573PC N20A 20-Lead (0.300×Wide) Molded Dual-In-Line
54F573DM (Note 2) J20A 20-Lead Ceramic Dual-In-Line
74F573SC (Note 1) M20B 20-Lead (0.300×Wide) Molded Small Outline, JEDEC
74F573SJ (Note 1) M20D 20-Lead (0.300×Wide) Molded Small Outline, EIAJ
54F573FM (Note 2) W20A 20-Lead Cerpak
54F573LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C
Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.
Note 2: Military grade device with environmental and burn-in processing. Use suffix
e
DMQB, FMQB and LMQB.
Logic Symbols
TL/F/9566– 1
IEEE/IEC
TL/F/9566– 4
Connection Diagrams
Pin Assignment for
DIP, SOIC and Flatpak
TL/F/9566– 2
Pin Assignment
for LCC
TL/F/9566– 3
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
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Unit Loading/Fan Out
54F/74F
Pin Names Description
U.L. Input I
IH/IIL
HIGH/LOW Output IOH/I
OL
D0–D
7
Data Inputs 1.0/1.0 20 mA/b0.6 mA
LE Latch Enable Input (Active HIGH) 1.0/1.0 20 m A/
b
0.6 mA
OE
TRI-STATE Output Enable Input
1.0/1.0 20 mA/
b
0.6 mA
(Active LOW)
O
0–O7
TRI-STATE Latch Outputs 150/40(33.3)b3 mA/24 mA (20 mA)
Functional Description
The ’F573 contains eight D-type latches with 3-state output buffers. When the Latch Enable (LE) input is HIGH, data on the D
n
inputs enters the latches. In this condition the latch­es are transparent, i.e., a latch output will change state each time its D input changes. When LE is LOW the latches store the information that was present on the D inputs a setup time preceding the HIGH-to-LOW transition of LE. The 3­state buffers are controlled by the Output Enable (OE
) input.
When OE
is LOW, the buffers are in the bi-state mode.
When OE
is HIGH the buffers are in the high impedance mode but this does not interfer with entering new data into the latches.
Function Table
Inputs Outputs
OE LE D O
LHH H LHL L LLX O
0
HXX Z
H
e
HIGH Voltage Level
L
e
LOW Voltage Level
X
e
Immaterial
O
0
e
Value stored from previous clock cycle
Logic Diagram
TL/F/9566– 5
Please note that this diagram is provided only for the understanding of logic operations and should not be used to estimate propagation delays.
2
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Storage Temperature
b
65§Ctoa150§C
Ambient Temperature under Bias
b
55§Ctoa125§C
Junction Temperature under Bias
b
55§Ctoa175§C
Plastic
b
55§Ctoa150§C
V
CC
Pin Potential to
Ground Pin
b
0.5V toa7.0V
Input Voltage (Note 2)
b
0.5V toa7.0V
Input Current (Note 2)
b
30 mA toa5.0 mA
Voltage Applied to Output
in HIGH State (with V
CC
e
0V)
Standard Output
b
0.5V to V
CC
TRI-STATE Output
b
0.5V toa5.5V
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
ESD Last Passing Voltage (Min) 4000V
Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating Conditions
Free Air Ambient Temperature
Military
b
55§Ctoa125§C
Commercial 0
§
Ctoa70§C
Supply Voltage
Military
a
4.5V toa5.5V
Commercial
a
4.5V toa5.5V
DC Electrical Characteristics
Symbol Parameter
54F/74F
Units V
CC
Conditions
Min Typ Max
V
IH
Input HIGH Voltage 2.0 V Recognized as a HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized as a LOW Signal
V
CD
Input Clamp Diode Voltage
b
1.2 V Min I
IN
eb
18 mA
V
OH
Output HIGH 54F 10% V
CC
2.5 I
OH
eb
1mA
Voltage 54F 10% V
CC
2.4 I
OH
eb
3mA
74F 10% V
CC
2.5 V Min
I
OH
eb
1mA
74F 10% V
CC
2.4 I
OH
eb
3mA
74F 5% V
CC
2.7 I
OH
eb
1mA
74F 5% V
CC
2.7 I
OH
eb
3mA
V
OL
Output LOW 54F 10% V
CC
0.5 V Min
I
OL
e
20 mA
Voltage 74F 10% V
CC
0.5 I
OL
e
24 mA
I
IH
Input HIGH 54F 20.0
mA Max
V
IN
e
2.7V
Current 74F 5.0
I
BVI
Input HIGH Current 54F 100
mA Max
V
IN
e
7.0V
Breakdown Test 74F 7.0
I
CEX
Output HIGH 54F 250
mA Max
V
OUT
e
V
CC
Leakage Current 74F 50
V
ID
Input Leakage
74F 4.75 V 0.0
I
ID
e
1.9 mA
Test All Other Pins Grounded
I
OD
Output Leakage
74F 3.75 mA 0.0
V
IOD
e
150 mV
Circuit Current All Other Pins Grounded
I
IL
Input LOW Current
b
0.6 mA Max V
IN
e
0.5V
I
OZH
Output Leakage Current 50 mA Max V
OUT
e
2.7V
I
OZL
Output Leakage Current
b
50 mA Max V
OUT
e
0.5V
I
OS
Output Short-Circuit Current
b
60
b
150 mA Max V
OUT
e
0V
I
ZZ
Bus Drainage Test 500 mA 0.0V V
OUT
e
5.25V
I
CCL
Power Supply Current 35 55 mA Max V
O
e
LOW
I
CCZ
Power Supply Current 35 55 mA Max V
O
e
HIGH Z
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AC Electrical Characteristics
74F 54F 74F
T
A
ea
25§C
T
A,VCC
e
Mil TA,V
CC
e
Com
Symbol Parameter V
CC
ea
5.0V C
L
e
50 pF C
L
e
50 pF
Units
C
L
e
50 pF
Min Typ Max Min Max Min Max
t
PLH
Propagation Delay 3.0 5.3 7.0 3.0 9.0 3.0 8.0
ns
t
PHL
Dnto O
n
2.0 3.7 6.0 2.0 7.0 2.0 6.5
t
PLH
Propagation Delay 5.0 9.0 11.0 5.0 13.5 5.0 12.0
ns
t
PHL
LE to O
n
3.0 5.2 7.0 3.0 7.5 3.0 7.0
t
PZH
Output Enable Time 2.0 5.0 8.0 2.0 10.0 2.0 9.0
t
PZL
2.0 5.6 8.5 2.0 10.0 2.0 9.5 ns
t
PHZ
Output Disable Time 1.5 4.5 5.5 1.5 7.0 1.5 6.5
t
PLZ
1.5 3.8 5.5 1.5 5.5 1.5 5.5
AC Operating Requirements
74F 54F 74F
Symbol Parameter
T
A
ea
25§C
T
A,VCC
e
Mil TA,V
CC
e
Com Units
V
CC
ea
5.0V
Min Max Min Max Min Max
ts(H) Setup Time, HIGH or LOW 2.0 2.0 2.0 t
s
(L) Dnto LE 2.0 2.0 2.0
ns
th(H) Hold Time, HIGH or LOW 3.0 3.0 3.0 t
h
(L) Dnto LE 3.5 4.0 3.5
tw(H) LE Pulse Width, HIGH 4.0 4.0 4.0 ns
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Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows:
74F 573 S C X
Temperature Range Family Special Variations
74F
e
Commercial QBeMilitary grade device with
54F
e
Military environmental and burn-in
processing
Device Type
X
e
Devices shipped in 13×reels
Package Code
Temperature Range
P
e
Plastic DIP
C
e
Commercial (0§Ctoa70§C)
D
e
Ceramic DIP
M
e
Military (b55§Ctoa125§C)
F
e
Flatpak
L
e
Leadless Chip Carrier (LCC)
S
e
Small Outline SOIC JEDEC
SJ
e
Small Outline SOIC EIAJ
Physical Dimensions inches (millimeters)
20-Lead Ceramic Leadless Chip Carrier (L)
NS Package Number E20A
5
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Physical Dimensions inches (millimeters) (Continued)
20-Lead Ceramic Dual-In-Line Package (D)
NS Package Number J20A
20-Lead (0.300×Wide) Molded Small Outline Package, JEDEC (S)
NS Package Number M20B
6
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Physical Dimensions inches (millimeters) (Continued)
20-Lead (0.300×Wide) Small Outline Package, EIAJ (SJ)
NS Package Number M20D
20-Lead (0.300×Wide) Molded Dual-In-Line Package (P)
NS Package Number N20A
7
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54F/74F573 Octal D-Type Latch with TRI-STATE Outputs
Physical Dimensions inches (millimeters) (Continued)
20 Lead Ceramic Flatpak (F)
NS Package Number W20A
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