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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 3DD301B
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Collector-Emitter Saturation Voltage : V
CE(sat)
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 50V(Min)
= 2.0V(Max) @IC= 3A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 4 V
Collector Current-Continuous 5 A
Collector Power Dissipation
@ T
=25℃
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
30 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 2.5
isc Website：www.iscsemi.cn
℃/W
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 3DD301B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
V
CE
(sat)
I
CBO
I
EBO
h
FE
Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 50 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 4 V
Collector-Base Breakdown Voltage IC= 5mA; IE= 0 80 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V
Collector Cutoff Current VCB= 50V; IE= 0 0.5 mA
Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA
DC Current Gain IC= 3A; VCE= 5V 30 250
isc Website：www.iscsemi.cn
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