Datasheet 2N7002K, 2V7002K Datasheet (ON) [ru]

2N7002K, 2V7002K

Small Signal MOSFET

60 V, 380 mA, Single, N−Channel, SOT−23

Features

• ESD Protected

• Low R

• Surface Mount Package

• 2V Prefix for Automotive and Other Applications Requiring Unique

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Applications

• Low Side Load Switch

• Level Shift Circuits

• DC−DC Converter

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

DS(on)

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

Compliant

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R

(BR)DSS

60 V

DS(on)

1.6 W @ 10 V

2.5 W @ 4.5 V

SIMPLIFIED SCHEMATIC

Gate

1

MAX

ID MAXV

380 mA

3

Drain

MAXIMUM RATINGS (T

Rating

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Drain Current (Note 1)

Steady State 1 sq in Pad TA = 25°C

Drain Current (Note 2)

Steady State Minimum Pad T

Power Dissipation

Steady State 1 sq in Pad
Steady State Minimum Pad

Pulsed Drain Current (tp = 10 ms)

Operating Junction and Storage
Temperature Range

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Gate−Source ESD Rating
(HBM, Method 3015)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.

2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

= 25°C unless otherwise stated)

J

Symbol Value Unit

DSS

GS

I

D

TA = 85°C

I

= 25°C

A

TA = 85°C

D

P

D

I

DM

TJ, T

STG

S

T

L

ESD 2000 V

60 V

±20 V

380
270

320
230

420
300

1.5 A

−55 to
+150

300 mA

260 °C

mA

mA

mW

°C

Source

2

(Top View)

MARKING DIAGRAM

3

1

2

SOT−23
CASE 318
STYLE 21

704 = Specific Device Code*
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

*Specific Device Code, Date Code or overbar

orientation and/or location may vary depend­ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.

& PIN ASSIGNMENT

Drain

3

704 MG

G

21

Gate

Source

ORDERING INFORMATION

Device Package Shipping

2N7002KT1G 3000 / Tape & Reel

2V7002KT1G 3000 / Tape & ReelSOT−23

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

SOT−23

(Pb−Free)

(Pb−Free)

†

© Semiconductor Components Industries, LLC, 2012

May, 2012 − Rev. 10

1 Publication Order Number:

2N7002K/D

2N7002K, 2V7002K

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Junction−to−Ambient − Steady State (Note 3) R

Junction−to−Ambient − t ≤ 5 s (Note 3) 92

Junction−to−Ambient − Steady State (Note 4) 417

Junction−to−Ambient − t ≤ 5 s (Note 4) 154

3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.

4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

q

JA

300

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

V

= 60 V

DS

VGS = 0 V,

V

= 50 V

DS

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = ±20 V ±10

VDS = 0 V, VGS = ±10 V 450 nA

VDS = 0 V, VGS = ±5.0 V 150 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature
Coefficient

Drain−to−Source On Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 500 mA 1.19 1.6 W

VGS = 4.5 V, ID = 200 mA 1.33 2.5

Forward Transconductance g

FS

VDS = 5 V, ID = 200 mA 530 mS

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

VGS = 0 V, f = 1 MHz,

V

DS

VGS = 4.5 V, VDS = 10 V;

I

= 200 mA

D

SWITCHING CHARACTERISTICS, VGS = V (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 10 V, VDD = 25 V,
I

= 500 mA, RG = 25 W

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

SD

VGS = 0 V,

I

= 200 mA

S

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

6. Switching characteristics are independent of operating junction temperatures

60 V

71 mV/°C

TJ = 25°C 1 mA

TJ = 125°C 500

TJ = 25°C 100 nA

1.0 2.3 V

4.0 mV/°C

24.5

= 20 V

4.2

2.2

0.7

0.1

0.3

0.1

12.2

9.0

55.8

29

TJ = 25°C 0.8 1.2

TJ = 85°C 0.7

mA

pF

nC

ns

V

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2

2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

1.6

1.2

0.8

, DRAIN CURRENT (A)

0.4

D

I

7.0 V

6.0 V

0

VGS = 10 V

9.0 V

8.0 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

3.2
VGS = 4.5 V

2.8

2.4

2.0

1.6

1.2

0.8

TJ = 125°C

TJ = 85°C

5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

TJ = 25°C

TJ = −55°C

1.2

0.8

0.4

, DRAIN CURRENT (A)

D

I

6420

0

3.2

2.8

2.4

2.0

1.6

1.2

0.8

TJ = 25°C

TJ = 125°C

VGS = 10 V

TJ = −55°C

6420

TJ = 125°C

TJ = 85°C

TJ = 25°C

TJ = −55°C

0.4

, DRAIN−TO−SOURCE RESISTANCE (W)R

0

DS(on)

R

ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Drain Current and

Temperature

2.4

2.0

1.6

1.2

0.8

, DRAIN−TO−SOURCE RESISTANCE (W)

0.4

DS(on)

ID = 500 mA

ID = 200 mA

VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance vs. Gate−to−Source

Voltage

0.4

, DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on)

1.21.00.80.60.40.20
R

2.2

1.8

1.4

, DRAIN−TO−SOURCE

1.0

DS(on)

R

RESISTANCE (NORMALIZED)

108642

0.6

, DRAIN CURRENT (A)

I

D

Figure 4. On−Resistance vs. Drain Current and

Temperature

ID = 0.2 A

VGS = 4.5 V

VGS = 10 V

1251007550250−25−50

Figure 6. On−Resistance Variation with

Temperature

1.21.00.80.60.40.20

150

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2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

30

C

iss

20

TJ = 25°C
V

= 0 V

C

oss

10

C, CAPACITANCE (pF)

C

rss

0

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

GS

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

10

VGS = 0 V

1

TJ = 25°CTJ = 85°C

5

TJ = 25°C
I

= 0.2 A

D

4

3

2

1

, GATE−TO−SOURCE VOLTAGE (V)

GS

0

201612840

V

Qg, TOTAL GATE CHARGE (nC)

0.80.60.40.20

Drain−to−Source Voltage vs. Total Charge

1.3
ID = 250 mA

1.2

1.1

1.0

0.9

0.1

, SOURCE CURRENT (A)

S

I

0.01

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

0.8

0.7

, THRESHOLD VOLTAGE (V)

0.6

GS(TH)

V

1.21.00.80.60.4

0.5

TJ, JUNCTION TEMPERATURE (°C)

150

1251007550250−25−50

Figure 10. Threshold Voltage with

Temperature

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2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

1000

Duty Cycle = 0.5

100

0.2

0.1

0.05

0.02

10

0.01

1

SINGLE PULSE

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

0.1

JC(t)

q

0.000001 0.00001 0.0001 0.001 0.01 0.1 1000

R

t, PULSE TIME (s)

Figure 11. Thermal Response − 1 sq in pad

1000

Duty Cycle = 0.5

0.2

100

0.1

0.05

0.02

10

1 10 100

0.01

1

SINGLE PULSE

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

0.1

JC(t)

q

0.000001 0.00001 0.0001 0.001 0.01 0.1 1000

R

t, PULSE TIME (s)

1 10 100

Figure 12. Thermal Response − minimum pad

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2N7002K, 2V7002K

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

D

H

SEE VIEW C

E

c

0.25

3

E

12

b

e

q

A

L

A1

L1

VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015

c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047

e 1.78 1.90 2.04 0.070

L 0.10 0.20 0.30 0.004

L1
H

E

STYLE 21:

PIN 1. GATE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104
0 −−− 10 0 −−− 10q°°°°

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT

0.95

0.95

0.037

0.9

0.035

0.8

0.031

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0.037

SCALE 10:1

2.0

0.079

ǒ

inches

mm

Ǔ

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