■ Very low Collector to Emitter saturation voltage
■ D.C. Current gain, h
■ 1.5 A continuous collector current
■ In compliance with the 2002/93/EC European
Directive
FE
>100
2STX2220
High Gain Low Voltage
PNP Power Transistor
Description
The device in a PNP transistor manufactured
using new “PB-HDC” (Power Bipolar High Density
Current) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Figure 1.Output characteristicsFigure 2.DC current gain
Figure 3.DC current gainFigure 4.Collector-emitter saturation
voltage
Figure 5.Base-emitter saturation
voltage
Figure 6.Base-emitter on voltage
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Electrical characteristics2STX2220
Figure 7.Capacitance curvesFigure 8.Switching time resistive load
Figure 9.Switching time resistive load
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2STX2220Electrical characteristics
2.2 Test circuits
Figure 10. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data2STX2220
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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2STX2220Package mechanical data
TO-92 BULK SHIPMENT MECHANICAL DATA
DIM.
MIN.TYPMAX.
A4.324.95
b0.360.51
D4.454.95
E3.303.94
e2.412.67
e11.141.40
L12.7015.49
R2.162.41
S10.921.52
W0.410.56
V5
mm.
O
0102782 C
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Revision history2STX2220
4 Revision history
Table 4.Revision history
DateRevisionChanges
19-Jun-20061Initial release.
25-Sep-20062New maturity code.
10/11
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2STX2220
y
y
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