Page 1
Features
2STW4466
High power NPN epitaxial planar bipolar transistor
■ High breakdown voltage V
■ Complementary to 2STW1693
■ Typical f
■ Fully characterized at 125
= 20 MHz
t
CEO
o
C
= 80 V
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured in
low voltage planar technology using base island
layout. The resulting transistor shows good gain
linearity coupled with low V
Recommended for 40 W to 70 W high fidelity
audio frequency amplifier output stage.
CE(sat)
behaviour.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STW4466 2STW4466 TO-247 Tube
September 2008 Rev 2 1/9
Marking Package Packaging
www.st.com
9
Page 2
Electrical ratings 2STW4466
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
C
stg
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
100 V
80 V
6V
Collector current 6 A
Collector peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
12 A
60 W
Storage temperature -65 to 150 °C
Max. operating junction temperature 150 °C
J
V
V
V
P
CBO
CEO
EBO
I
I
CM
TOT
T
T
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case ____max 2.08 °C/W
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Page 3
2STW4466 Electrical characteristics
2 Electrical characteristics
(T
= 25°C; unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
V
(BR)EBO
V
(BR)CBO
V
(BR)CEO
V
CE(sat)
V
C
CBO
EBO
BE
h
FE
f
T
CBO
t
on
t
stg
t
f
Collector cut-off current
= 0)
(I
E
Emitter cut-off current
= 0)
(I
C
Emitter-base breakdown
voltage (I
C
= 0)
Collector-base breakdown
voltage (I
E
= 0)
Collector-emitter breakdown
voltage (I
Collector-emitter saturation
(1)
B
= 0)
voltage
(1)
Base-emitter voltage
DC current gain
Transition frequency
Collector-base capacitance
= 0)
(I
E
Resistive load
Turn-on time
Storage time
Fall time
= 100 V
V
CB
= 6 V
V
EB
= 1 mA
I
E
= 100 µA
I
C
= 50 mA
I
C
I
= 2 IB = 200 mA
C
I
= 6 A IB = 600 mA
C
= 4 V IC = 6 A
V
CE
I
= 2 A V
C
I
= 0.5 A V
C
= 10 V f = 1 MHz
V
CB
I
= 3 A V
C
I
= -I
B2
= 0.3 A
B1
CE
CE
CC
= 4 V
= 12 V
= 30 V
0.1 µA
0.1 µA
6V
100 V
80 V
0.6
1.5
V
V
1.5 V
50 120
20 MHz
50 pF
0.15
1.5
0.1
ns
ns
ns
Pulsed duration = 300 µs, duty cycle ≤ 1.5%
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Page 4
Electrical characteristics 2STW4466
2.1 Electrical characteristics (curves)
Figure 2. DC current gain Figure 3. DC current gain
Figure 4. Collector-emitter saturation
voltage
Figure 5. Base-emitter saturation
voltage
Figure 6. Base emitter voltage Figure 7. Resistive load switching time
(on)
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Page 5
2STW4466 Electrical characteristics
Figure 8. Resistive load switching time
(off)
Figure 9. Emitter-base and collector-
base capacitance
5/9
Page 6
Package mechanical data 2STW4466
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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Page 7
2STW4466 Package mechanical data
TO-247 Mechanical data
Dim.
Min. Typ Max.
A4.855.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c0.40 0.80
D19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50
mm.
7/9
Page 8
Revision history 2STW4466
4 Revision history
Table 5. Document revision history
Date Revision Changes
11-Oct-2007 1 First release
25-Sep-2008 2 Content reworked to improve readability, no technical changes.
8/9
Page 9
2STW4466
y
s
y
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