Page 1
Features
2STW1693
High power PNP epitaxial planar bipolar transistor
■ High breakdown voltage V
■ Complementary to 2STW4466
■ Typical f
■ Fully characterized at 125
= 20 MHz
t
CEO
o
C
= -80 V
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured in
low voltage planar technology using base island
layout. The resulting transistor shows good gain
linearity coupled with low V
Recommended for 40W to 70W high fidelity audio
frequency amplifier output stage.
CE(sat)
behaviour.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2STW1693 2STW1693 TO-247 Tube
October 2008 Rev 2 1/9
www.st.com
9
Page 2
Electrical ratings 2STW1693
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
P
CBO
CEO
EBO
I
I
CM
TOT
T
T
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current -6 A
C
Collector peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature -65 to 150 °C
stg
Max. operating junction temperature 150 °C
J
-100 V
-80 V
-6 V
-12 A
60 W
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case _____________max 2.08 °C/W
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Page 3
2STW1693 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C; unless otherwise specified)
case
Tabl e 4 . Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
V
(BR)EBO
V
(BR)CBO
V
(BR)CEO
V
CE(sat)
V
BE
h
C
CBO
EBO
CBO
Collector cut-off current
= 0)
(I
E
Emitter cut-off current
= 0)
(I
C
Emitter-base breakdown
voltage (I
= 0)
C
Collector-base breakdown
voltage (I
= 0)
E
Collector-emitter breakdown
voltage (I
Collector-emitter saturation
(1)
= 0)
B
voltage
(1)
Base-emitter voltage
DC current gain
FE
f
Transition frequency
T
Collector-base capacitance
= 0)
(I
E
V
CB
V
EB
= -1 mA
I
E
= -100 µA
I
C
= -50 mA
I
C
= -2 A IB = -200 mA
I
C
= -6 A IB = -600 mA
I
C
V
CE
I
= -2 A V
C
I
= -0.5 A V
C
V
CB
Resistive load
t
t
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
on
stg
t
f
Tu r n- o n ti m e
Storage time
Fall time
I
= -3 A V
C
I
B1
= -100 V
= -6 V
= -4 V IC = -6 A
= -4 V
CE
= -12 V
CE
= -10 V f = 1 MHz
= -30 V
CC
= -I
= -0.3 A
B2
-0.1 µA
-0.1 µA
-6 V
-100 V
-80 V
-0.6
-1.5VV
-1.5 V
50 120
20 MHz
80 pF
0.18
0.6
0.09
ns
ns
ns
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Page 4
Electrical characteristics 2STW1693
2.1 Electrical characteristics (curves)
Figure 2. DC current gain Figure 3. DC current gain
Figure 4. Collector-emitter saturation
voltage
Figure 5. Base-emitter saturation
voltage
Figure 6. Base-emitter voltage Figure 7. Resistive load switching time
(on)
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Page 5
2STW1693 Electrical characteristics
Figure 8. Resistive load switching time
(off)
Figure 9. Collector-base and emitter-
base capacitance
5/9
Page 6
Package mechanical data 2STW1693
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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Page 7
2STW1693 Package mechanical data
TO-247 Mechanical data
Dim.
Min. Typ Max.
A4.855.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c0.40 0.80
D19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50
mm.
7/9
Page 8
Revision history 2STW1693
4 Revision history
Table 5. Document revision history
Date Revision Changes
10-Oct-2007 1 Initial release
02-Oct-2008 2 Content reworked to improve readability, no technical changes.
8/9
Page 9
2STW1693
y
s
y
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